2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

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922 results (401 - 410)

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[N-5-04] Compensating for V_TH Variations in LTPS Thin-Film Transistors by Voltage-Programmed Pixel Circuit with Inverted OLED for AMOLED Displays

^○C.C. Hsu¹, L.R. Chen¹, M.H. Cheng², C.L. Lin¹ (1.National Cheng Kung University (Taiwan), 2.AU Optronics (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 2:15 PM - 2:30 PM |PDF Download

[N-6-01 (Invited)] Solution-processed organic-inorganic perovskite thin film transistors

^○T. Matsushima^1,2, C. Adachi^1,2 (1.Kyushu Univ. (Japan), 2.JST-ERATO (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 3:15 PM - 3:45 PM |PDF Download

[N-6-02] Pyroelectric energy harvesting with Black-Al/Pt/Pb(Zr0.2Ti0.8)O3/Pt thin films

^○J. More-Chevalier¹, P. Yudin¹, M. Novotný¹, C. Cibert², P. Fitl¹, G. Poullain², J. Lančok¹ (1.Inst. of Physics CAS (Czech Republic), 2.Univ. of Caen Normandie (France))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 3:45 PM - 4:00 PM |PDF Download

[N-6-03] SiC Dots in Amorphous-Si and Poly-Si Substrates Fabricated by Hot-C⁺-Ion Implantation

^○T. Mizuno¹, R. Kanazawa¹, Y. Omata¹, T. Aoki¹, T. Sameshima² (1.Kanagawa Univ. (Japan), 2.Tokyo Univ. of Agric. and Tech. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:00 PM - 4:15 PM |PDF Download

[N-6-04 (Late News)] Effect of Tin and Gallium Composition on the Instability of Amorphous Indium-Gallium-Zinc-Tin-Oxide (IGZTO) Thin-Film Transistors under Positive Gate Bias

^○D. Zhao¹, N. Saito¹, T. Ueda¹, T. Tezuka¹, K. Ikeda¹ (1.Toshiba Memory Corp. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:15 PM - 4:30 PM |PDF Download

[N-7-01] Enhancement Performance of Co-sputtered Ti-IGZO Thin-Film Transistors with Al-ZrO₂ Gate Dielectric

C.X. Lin¹, S.J. Wang¹, R.M. Ko¹, S.Y. Wang¹, H.Y. Chen¹, C.K. Liao¹, S.T. Hsiao¹,^○B.C. You¹ (1.Univ. of Cheng Kung (Taiwan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 9:00 AM - 9:15 AM |PDF Download

[N-7-02] Mobility enhancement of InGaZnO_x thin-film transistor by hetero-channel with a different composition.

^○M. Furuta¹, D. Koretomo¹, R. Higashi¹ (1.Kochi Univ. of Tech. (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 9:15 AM - 9:30 AM |PDF Download

[N-7-03] Mechanism of Threshold Voltage Control by Back Gates in CAAC-IGZO FETs

^○R. Honda¹, K. Tsuda¹, T. Takeuchi¹, K. Tochibayashi¹, T. Atsumi¹, K. Kato¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 9:30 AM - 9:45 AM |PDF Download

[N-7-04] Mechanism of Negative Bias Illumination Stress in InGaZn Oxide TFTs

H. Li¹, Y. Guo²,^○J. Robertson¹ (1.Cambridge Univ. (UK), 2.Swansea Univ. (UK))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 9:45 AM - 10:00 AM |PDF Download

[N-7-05] The Inverted-Staggered InGaZnO TFT with Hydrogen-Free PECVD-SiO₂ Etch-Stopper and Passivation Layers

^○T. Kobayashi¹, H. Zama¹ (1.ULVAC, Inc. (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 10:00 AM - 10:15 AM |PDF Download

922 results (401 - 410)

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