2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

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922 results (431 - 440)

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[PS-1-17] Steep Switching Less Than 15 mV/decade in Silicon-on-Insulator Tunnel FETs by Trimmed-Gate Structure

^○H. Asai¹, T. Mori¹, T. Matsukawa¹, J. Hattori¹, K. Endo¹, K. Fukuda¹ (1.AIST (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:46 PM - 4:47 PM |PDF Download

[PS-1-18] High Performance NiGe/n-Ge Junctions and pMOSFETs Fabricated with Dopant Segregation

^○S. Yuan¹, J. Li¹, R. Zhang¹, Y. Zhao¹ (1.Zhejiang University (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:47 PM - 4:48 PM |PDF Download

[PS-1-19] Back Gate Modulation of Ultra-Thin-Body InGaAs-OI nMOSFET

^○X. Tang^1,2, R. Zhang¹, Y. Zhao¹ (1.Zhejiang Univ. (China), 2.Nanjing Univ. (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:48 PM - 4:49 PM |PDF Download

[PS-1-20] Impact of Ge Fraction to Bulk Resistivity and Work Function of NiSiGe Alloys

^○S. Zeng¹, J. Li¹, R. Zhang¹, Y. Zhao¹ (1.Zhejiang Univ. (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:49 PM - 4:50 PM |PDF Download

[PS-1-21] Improved Conductance Method for Interface Trap Density of ZrO2-Si interface

^○H.J. Lin^1,2 (1.National Chiao Tung Univ. (Taiwan), 2.Tohoku Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:50 PM - 4:51 PM |PDF Download

[PS-1-22] Time-Dependent Selective Oxidation by Low Pressure Oxidation on High-Ge-Content SiGe

^○W.L. Lee¹, J.L. Zhang¹, S.Y. Wang¹, M.L. Tsai¹, G.L. Luo², C.H. Chien¹ (1.National Chiao Tung Univ. (Taiwan), 2.National Nano Device Labs. (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:51 PM - 4:52 PM |PDF Download

[PS-1-23] Identification of different gas-phase reaction modes of WF₆ with SiH₄ for deposition of WSi_n films: powder formation and WSi_n cluster synthesis

^○N. Okada¹, N. Uchida¹, S. Ogawa¹, T. Kanayama¹ (1.AIST (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:52 PM - 4:53 PM |PDF Download

[PS-1-24] Improvement of Interface Properties of Ge-MISFET with Crystalline La₂O₃ high-k/Ge(111) Gate Stacks by Wet Treatments

^○T. Kanashima¹, H. Furusho¹, K. Takayama¹, H. Nohira², K. Yamamoto³, H. Nakashima³ (1.Osaka Univ. (Japan), 2.Tokyo City Univ. (Japan), 3.Kyushu Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:53 PM - 4:54 PM |PDF Download

[PS-1-25] A Study of Interfacial Layer Quality and Thermal Stability of HfO₂/SiGe Gate Stack by Using NH₃ Plasma Treatment

^○C.Y. Yu¹, W.L. Lee¹, M.L. Tasi¹, J.L. Zhang¹, G.L. Luo², C.H. Chien¹ (1.National Chiao Tung Univ. (Taiwan), 2.National Nano Device Labs. (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:54 PM - 4:55 PM |PDF Download

[PS-1-26 (Late News)] Read Static Noise Margin Fluctuation Induced by Various Random Discrete Dopants on 6T SRAM with Nanowire FET (NWFET) and Hybrid FinFET-NWFET Cells

^○W.L. Sung¹, Y. Li¹ (1.National Chiao Tung University (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:55 PM - 4:56 PM |PDF Download

922 results (431 - 440)

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