2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

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922 results (421 - 430)

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[PS-1-07] Stochastic Simulation of Breakdown Process for High-k Dielectrics

^○W. Liu¹, B. Chen¹, S. Gao¹, Z. Zheng¹, Y. Zhao¹ (1.Zhejiang Univ. (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:36 PM - 4:37 PM |PDF Download

[PS-1-08] Analysis and Optimization of Device Parameters on Super-Steep Subthreshold Slope PN-Body Tied SOI-FET

^○T. Mori¹, J. Ida¹ (1.Kanazawa Inst. of Tech. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:37 PM - 4:38 PM |PDF Download

[PS-1-09] [No-show]A Synaptic Transistor Featuring SiGe Quantum Well and Charge-Trap Layer for Short- and Long-Term Potentiation towards Neuromorphic System Application

^○E. Yu¹, W. Sun², J.H. Seo³, I.M. Kang⁴, H. Shin², S. Cho¹ (1.Gachon Univ. (Korea), 2.Ewha Woman’s Univ. (Korea), 3.Seoul National Univ. (Korea), 4.Kyungpook National Univ. (Korea))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:38 PM - 4:39 PM

[PS-1-10] N⁺/P Hybrid Poly-Si Shell Structure Junctionless Field-Effect Transistors by Electron Beam Lithography Dosage Adjusted Method

^○M.J. Tsai¹, Y.Y. Chiang¹, Y.C. Wu¹ (1.National Tsing Hua Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:39 PM - 4:40 PM |PDF Download

[PS-1-11] Performance Analysis of Gate-All-Around Negative Capacitance Stacked Nanowire and Negative Capacitance Nanosheet FETs

^○Z.T. Lin¹, P.C. Chiu¹, V.P.H. Hu¹ (1.National Central Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:40 PM - 4:41 PM |PDF Download

[PS-1-12] Ambipolar operation of asymmetric Ge Schottky tunneling source field-effect transistor fabricated on Ge-on-Insulator

^○K. Yamamoto¹, K. Nakae¹, D. Wang¹, H. Nakashima¹, Z. Xue², M. Zhang², Z. Di² (1.Kyushu Univ. (Japan), 2.Chinese Academy of Sci. (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:41 PM - 4:42 PM |PDF Download

[PS-1-13] Stability Analysis of Subthreshold/Superthreshold Negative Capacitance FinFET SRAM Cell

^○Z.A. Zheng¹, P.C. Chiu¹, V.P.H. Hu¹ (1.National Central Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:42 PM - 4:43 PM |PDF Download

[PS-1-14] Improvement in GaAsSb/InGaAs double-gate tunnel FET using thermal evaporation for gate electrode and Al₂O₃/ZrO₂ for gate insulator

^○R. Aonuma¹, N. Kise¹, Y. Miyamoto¹ (1.Tokyo Tech (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:43 PM - 4:44 PM |PDF Download

[PS-1-15] Significant Improvement in Electrical Characteristics of FinFETs by Trilayer High-k Gate Dielectric

^○S.H. Hsu¹, K.S. Chang-Liao¹, Y.L. Li¹, C.H. Huang¹, D.B. Ruan¹, S.F. Tsai¹, M.Y. Chen¹ (1.National Tsing Hua University (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:44 PM - 4:45 PM |PDF Download

[PS-1-16] Vertical gate-all-around transistors with symmetrical silicided S/D contacts for high performance p-FET devices.

^○G. Larrieu¹, N. Mallet¹, Y. Guerfi¹, F. Cristiano¹, J. Pezard¹, A. Lecestre¹ (1.LAAS CNRS (France))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:45 PM - 4:46 PM |PDF Download

922 results (421 - 430)

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