[C-6-01 (Invited)] Liquid phase crystalline Silicon on Glass: A pathway to high efficiency thin film solarcells

C.T. Trinh¹, S. Garud¹, M. Trahms¹,^○D. Amkreutz¹ (1.Institut für Silizium Photovoltaik Helmholtz Zentrum Berlin für Materialien und Energie GmbH (Germany))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 10:30 〜 11:00 |PDF ダウンロード

[C-6-02] Surface inversion layer effective minority carrier mobility as one of the measures of surface quality of the p-aSi:H/i-aSi:H/cSi heterojunction solar cell

^○Y. Hayashi¹, T. Kamioka^1,3, K. Gotoh², R. Ozaki¹, K. Nakamura¹, M. Morimura¹, S. Naitou¹, N. Usami², A. Ogura³, Y. Ohshita¹ (1.Toyota Technological Institute (Japan), 2.Nagoya Univ. (Japan), 3.Meiji Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:00 〜 11:15 |PDF ダウンロード

[C-6-03] Solute PEDOT:PSS as an Excellent Passivation Material of Si Substrate

^○V.H. Nguyen¹, S. Kato², K. Gotoh¹, Y. Kurokawa¹, N. Usami¹ (1.Nagoya Univ. (Japan), 2.Nagoya Institute of Technology (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:15 〜 11:30 |PDF ダウンロード

[C-6-04] Organic Hole Conducting Layer Achieves 80.5% Fill Factor in Conventional Silicon Solar Cells

^○L.J. Kuo¹, P.P. Pancham¹, Y.C. Chang¹, C.T. Lin¹, B.H. Lin¹, H.F. Meng¹, P. Yu¹ (1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:30 〜 11:45 |PDF ダウンロード

[C-6-05] Influence of Shadow on Shunt-Type Potential-Induced Degradation for Crystalline Si Photovoltaic Modules Exposed Outdoors

Y. Tachibana¹, T. Toyoda¹, T. Minamikawa¹, K. Ogawa², Y. Hara², K. Sakurai²,^○A. Masuda² (1.Indus. Res. Inst. Ishikawa (Japan), 2.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:45 〜 12:00 |PDF ダウンロード

[D-1-01 (Invited)] Continue the transistor scaling with 2D materials: Challenges and Perspective

^○L.-J. Li¹ (1.TSMC (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:00 〜 14:30 |PDF ダウンロード

[D-1-02] High On/Off Ratio Tunnel Transistor Formed by CVD-grown Bilayer WSe ₂/MoSe ₂ van der Waals Heterostructures

^○T. Irisawa¹, N. Okada¹, W.H. Chang¹, M. Okada¹, T. Mori¹, T. Endo², Y. Miyata² (1.AIST (Japan), 2.Tokyo Metropolitan Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:30 〜 14:45 |PDF ダウンロード

[D-1-03] MOCVD growth of 2D WS2 on SiO2: nucleation mechanism and kinetics

^○M. Caymax¹, S.E. Kazzi¹, C. Huyghebaert¹ (1.Imec (Belgium))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:45 〜 15:00 |PDF ダウンロード

[D-1-04] On Electronic Structure of Monolayer Tungsten Disulfide Doped by 3 d Transition Metals

^○C.-Y. Chen¹, Y. Li¹ (1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:00 〜 15:15 |PDF ダウンロード

[D-1-05] Large linear magnetoresistance effect in high-quality InSb nanosheets

^○S. Tong^1,2, D. Pan^1,2, X. Wang^1,2, D. Wei^1,2, J. Zhao^1,2 (1.Inst. of Semiconductors, CAS (China), 2.Univ. of CAS (China))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:15 〜 15:30 |PDF ダウンロード