[PS-9-14 (Late News)] Quantum transport in twisted bilayer graphene hydrid junction devices

^○D. Rui¹, L. Sun², N. Kang¹, H. Peng², Z. Liu², H. Xu¹ (1.Bejing Key Lab. of Quantum Devices, Key Lab. for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking Univ. (China), 2.Center for Nanochemistry, Beijing Sci. and Eng. Center for Nanocarbons, Beijing National Lab. for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking Univ. (China))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 13:00 〜 15:00 |PDF ダウンロード

[PS-9-15 (Late News)] Sensitive current measurement on a quantum antidot with a Corbino-type electrode

^○T. Hata¹, T. Uchino¹, T. Akiho², K. Muraki², T. Fujisawa¹ (1.Tokyo Inst. of Tech. (Japan), 2.NTT Basic Res. Labs. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 13:00 〜 15:00 |PDF ダウンロード

[PS-9-16 (Late News)] Magnetic tunnel junction with a metastable bcc Co₃Mn alloy electrode

K. Kunimatsu^1,2,^○T. Tsuchiya^3,4, K. Elphick⁵, T. Ichinose², K.Z. Suzuki^2,4, A. Hirohata⁵, S. Mizukami^2,3,4 (1.Dept. Appl. Phys., Grad. Sch. of Eng., Tohoku Univ. (Japan), 2.WPI-AIMR, Tohoku Univ. (Japan), 3.CSIS (CRC), Tohoku Univ. (Japan), 4.CSRN. Tohoku Univ. (Japan), 5.The Univ. of York (UK))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 13:00 〜 15:00 |PDF ダウンロード

[PS-9-17 (Late News)] Optical Outlook of the Germanium–Vacancy Center in Diamond

^○M. Hanks¹, W. Munro^2,3,1, K. Nemoto¹ (1.National Inst. of Informatics (Japan), 2.NTT Basic Res. Labs., NTT Corp. (Japan), 3.NTT Res. Center for Theoretical Quantum Physics, NTT Corp. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 13:00 〜 15:00 |PDF ダウンロード

[PS-9-18 (Late News)] Efficient Heat Transfer by Through Silicon Via in 3D Packaging for Practical-scale Quantum Annealing Machine

^○W. Feng¹, K. Kikuchi¹, M. Hidaka¹, H. Yamamori¹, Y. Araga¹, K. Makise¹, S. Kawabata¹ (1.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 13:00 〜 15:00 |PDF ダウンロード

[PS-10-01] Enhanced Electrical Performance and Reliability of Ti-IGZO Thin-Film Transistors with Hf_xAl_1-xO Gate Dielectrics

^○J.H. Wu¹, B.C. You¹, S.J. Wang^1,2, R.M. Ko², C.E. Lin¹ (1.Institute of Microelectronics, Dept. of Electrical Engineering, National Cheng Kung Univ., Tainan (Taiwan), 2.College of Electrical Engineering and Computer Science, National Cheng Kung Univ., Tainan (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 13:00 〜 15:00 |PDF ダウンロード

[PS-10-02] Nanostructured High-Performance Thin-Film Transistors Fabricated by Near-Field Nanolithography Strategy

^○K. Huang¹, Z. Chen¹, S. Hu¹, J. Wu¹, C. Liu¹ (1.Sun Yat-sen Univ. (China))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 13:00 〜 15:00 |PDF ダウンロード

[PS-10-03] Growth of Single Crystalline ZnO Films on 18%-Lattice Mismatched Sapphire Substrates via Inverse Stranski-Krastanov Mode

^○N. Itagaki¹, D. Yamashita¹, K. Kamataki¹, K. Koga¹, M. Shiratani¹ (1.Kyushu Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 13:00 〜 15:00 |PDF ダウンロード

[PS-10-04] Inducing Thermoelectricity in C-axis Aligned Crystalline InGaZnO Thin Film via Hydrogen Annealing

^○J.C.E. Felizco¹, M. Uenuma¹, H. Murakawa¹, Y. Ishikawa¹, Y. Uraoka¹ (1.NAIST (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 13:00 〜 15:00 |PDF ダウンロード

[PS-10-05] Growth mechanism of Zinc Oxide thin film by mist-CVD via the modulation of [H₂O]/[Zn] ratios

^○P. Rutthongjan¹, M. Nishi¹, L. Liu^1,2, S. Sato¹, G.T. Dang^1,2, T. Kawaharamura^1,2 (1.Graduated school of Engineering Kochi Univ. of Tech. (Japan), 2.Center for Nanotechnology, Research Inst. Univ. of Tech. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 13:00 〜 15:00 |PDF ダウンロード