[M-6-03] Nano-Watt Voltage References with Sub-10 ppm/°C Temperature Coefficients

C.-S. Dai¹,^○H. Lin¹ (1.National Chung Hsing Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:30 〜 11:45 |PDF ダウンロード

[M-6-04] Compact BJT based On-Die CMOS Temperature Sensor for thermal management of SOC on 14 nm Process

^○T. Oshita¹ (1.Intel Corporation (USA))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:45 〜 12:00 |PDF ダウンロード

[M-7-01 (Invited)] A New Flexible Photoplethysmography (PPG) Sensor Patch for Continuous Measurement of Blood Flow Volume and Pressure based on AI algorithms

^○P.C.-P. Chao¹ (1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 13:00 〜 13:30 |PDF ダウンロード

[M-7-02 (Invited)] Wearable Vital Sign Sensing Technology based on FBG Sensor System

^○H. Ishizawa¹, Y. Haseda¹, K. Johguchi¹ (1.Shinshu Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 13:30 〜 14:00 |PDF ダウンロード

[M-7-03] Image Sensor with In-pixel Calculation using Crystalline IGZO in Display

^○T. Nakagawa¹, Y. Negoro¹, T. Ikeda¹, S. Yoneda¹, H. Kobayashi¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co.,Ltd. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 14:00 〜 14:15 |PDF ダウンロード

[N-1-01 (Invited)] Enabling Ultra Low-Vmin and Low-Leakage Operation in FDSOI High-density SRAMs

^○R. Ranica¹ (1.STMicroelectronics (France))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:00 〜 14:30 |PDF ダウンロード

[N-1-02] Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET

^○T. Yamagishi¹, A. Hori¹, H. Wakabayashi¹, I. Muneta¹, K. Tsutsui¹, K. Kakushima¹ (1.Tokyo Tech (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:30 〜 14:45 |PDF ダウンロード

[N-1-03] Scaled, Novel Effective Workfunction Metal Gate Stacks for Advanced Low-V_T, Gate-All-Around Vertically Stacked Nanosheet FETs with Reduced Vertical Distance between Sheets

^○A. Veloso¹, E. Simoen¹, A. Oliveira², A. Chasin¹, S.-C. Chen³, Y. Lin³, T. Miyashita³, M. Kim³, D. Jang¹, R. Ritzenthaler¹, X. Zhou¹, H. Mertens¹, V. Pena⁴, G. Santoro⁴, K. Kenis¹, F. Sebaai¹, G. Mannaert¹, K. Devriendt¹, T. Hopf¹, J.J. Versluijs¹, O. Richard¹, J. Machillot⁴, N. Yoshida³, N. Horiguchi¹ (1.Imec (Belgium), 2.Federal Univ. of Tech. Parana (Brazil), 3.Applied Materials (USA), 4.Applied Materials Belgium (Belgium))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:45 〜 15:00 |PDF ダウンロード

[N-1-04] Statistical Analysis of Temperature Dependence of Worst Case SRAM Data Retention Voltage Using Extreme Value Theory

^○T. Mizutani¹, K. Takeuchi¹, T. Saraya¹, M. Kobayashi¹, T. Hiramoto¹ (1.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:00 〜 15:15 |PDF ダウンロード

[N-1-05 (Late News)] Evaluation of 2D Negative-Capacitance FET Based Subsystem-Level Logic Circuits Considering Ferroelectric Nonuniformity

^○Y.J. Wu¹, W.X. You¹, P. Su¹ (1.NCTU (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 15:15 〜 15:30 |PDF ダウンロード