[PS-1-02] X-ray Photoelectron Spectroscopy Study of the Physical Chemistry of the TiN/Hf0.5Zr0.5O2 Interface
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
779件中(541 - 550)
[PS-1-03] Study on Random Telegraph Noise of High-κ/Metal-Gate Gate-All-Around Poly-Si Nanowire Transistors
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-1-04] Systematic analysis of electron traps of HfSiON/SiO2 nMOSFETs using TSCIS
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-1-05] Characteristic Variability and Random Telegraph Noise of Gate-All-Around Silicon Nanowire MOSFETs with Asymmetric Dual Spacer Induced by Single Charge Trap
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-1-06] Characteristics of Ni-silicided Schottky barrier MOSFET using Microwave annealing of low thermal budget
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-1-07] The Evaluation of PtHfSi/n-Si(100) Schottky Barrier Height by Boron Dopant Segregation with Short Annealing Duration
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-1-08] Low Temperature (<300°C) Fabrication of Ge MOS Structure for Advanced Electronic Devices
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-1-09] Ge nMOSFETs with GeOx Passivation Formed by 450℃ Oxygen RTA Postoxidation
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-1-10] Effects of Plasma Nitrided Trilayer High-k Gate Dielectric on Electrical Characteristics of FinFET
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-1-11] Enhanced Electrical Characteristics of FinFETs with Strained SiGe Super-Lattice Channel
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)