[PS-4-03] Evaluation of Carrier Recombination Lifetime in Silicon Epitaxial Layer by Open Circuit Voltage Decay Method
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
779件中(591 - 600)
[PS-4-04] Fabrication of 4H-SiC PiN Diodes on Substrate Grown by HTCVD Method
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-05] Numerical Study of 4H-SiC PiN Diode to Enable Forward Bias Degradation Prediction Considering BPD-TED Conversion Position in the SiC Epitaxial Wafer
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-06] Fermi Level Pinning at Metal/4H-SiC Contact Induced by SiCxOy Interlayer
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-07] The effect of biaxial stress on the carrier-transport properties at SiO2/4H-SiC interfaces
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-08] A LOCal Oxidation of SiC (LOCOSiC) Process for 4H-SiC Integrated Circuits
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-09] Study on the Effects of Si Implantation on the Interface of 4H-SiC MOSFET
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-10] Synchrotron X-ray Photoelectron Spectroscopy on interface state densities of CVD-Grown SiO2/4H-SiC Sturcures Treated by Post-Deposition Treatments
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-11] Improved vertical Schottky barrier diodes characteristics by eliminating killer defects in heavily B-doped diamond substrates
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)
[PS-4-12] Diamond Schottky barrier diodes on half-inch single-crystal wafers fabricated by Minimal Fab System
2019 International Conference on Solid State Devices and Materials
|2019年9月4日(水)