[F-5-04] Pregrowth treatment induced below-bandgap states in GaAs

^○R.C.I. Roca¹, K. Fukui¹, H. Mizuno¹, M. Suzuki¹, I. Kamiya¹ (1.Toyota Tech. Inst. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 09:45 〜 10:00 |PDF ダウンロード

[F-5-05 (Late News)] Analysis of Inclined Threading Dislocation from GaN [0001] by Raman mapping

^○N. Kokubo^1,2, S. Inotsume^1,2, Y. Tsunooka^1,2, F. Fujie¹, J. Ohara¹, S. Onda¹, H. Yamada², M. Shimizu^1,2, S. Harada¹, M. Tagawa¹, T. Ujihara^1,2 (1.Nagoya Univ. (Japan), 2.AIST (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 10:00 〜 10:15 |PDF ダウンロード

[F-6-01] Thickness dependent crystal and electrical properties of polycrystalline Ge on a plastic substrate formed by solid-phase crystallization

^○T. Imajo¹, T. Suemasu¹, K. Toko¹ (1.Univ. of Tsukuba (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 10:30 〜 10:45 |PDF ダウンロード

[F-6-02] High Carrier Mobility Sn-Doped Ge Thin-Films (< 50 nm) on Insulator by Interface-Modulated Solid-Phase Crystallization at Low-Temperature

^○X. Gong¹, C. Xu¹, T. Sadoh¹ (1.Kyushu Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 10:45 〜 11:00 |PDF ダウンロード

[F-6-03] Ge / SiGe Multi Quantum Well Fabrication by Using Reduced Pressure Chemical Vapor Deposition

^○Y. Yamamoto¹, O. Skibitzki¹, M.A. Schubert¹, M. Scuderi^1,2, F. Reichmann¹, M. Zöllner¹, G. Capellini^1,3, B. Tillack^1,4 (1.IHP-Leibniz Institut für Innovative Mikroelectronik (Germany), 2.Istituto per la Microelettronica e Microsistemi (CNR-IMM) (Italy), 3.Univ. degli Studi Roma Tre (Italy), 4.Technische Univ. Berlin (Germany))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:00 〜 11:15 |PDF ダウンロード

[F-6-04] Low Temperature (< 130^oC) Formation of Crystalline Ge Film on Insulator by Stress Stimulated GILC

^○T. Nishijima¹, K. Kusano¹, K. Kudo¹, M. Furuta², Y. Kusuda², S. Motoyama², N. Naka³, T. Numata⁴, I. Tsunoda¹ (1.National Inst. of Tech., Kumamoto College (Japan), 2.SAMCO Inc. (Japan), 3.HORIBA Ltd. (Japan), 4.HORIBA TECHNO SERVICE Co., Ltd (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:15 〜 11:30 |PDF ダウンロード

[F-6-05] Strain Relaxation Enhancement of Ge₁₋_x₋_ySi_xSn_y Epitaxial Layer on Ge Substrate Using Ion-Implantation Method

^○H. Sofue¹, M. Fukuda¹, S. Shibayama¹, S. Zaima^1,2, O. Nakatsuka^1,3 (1.Nagoya Univ. (Japan), 2.Meijo Univ. (Japan), 3.IMaSS, Nagoya Univ. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:30 〜 11:45 |PDF ダウンロード

[F-6-06 (Late News)] Highly oriented Si(111) films on lattice-mismatched single-crystalline substrates via aluminum-induced crystallization

^○M.F. Hainey Jr.¹, C. Zhou², N. Usami¹ (1.Nagoya Univ. (Japan), 2.UCLA (USA))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 11:45 〜 12:00 |PDF ダウンロード

[G-1-01 (Invited)] Characteristics of Scaled CAAC-IGZO FET and Its Application to LSI

^○K. Kato¹, H. Kunitake¹, T. Onuki¹, K. Tsuda¹, S. Ohshita¹, D. Shimada¹, Y. Yanagisawa¹, T. Murakawa¹, T. Atsumi¹, S. Yamazaki¹ (1.Semiconductor Energy Laboratory Co., Ltd. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:00 〜 14:30 |PDF ダウンロード

[G-1-02] IGZO Integration Scheme For Enabling IGZO nFETs

^○L. Kljucar¹, J. Mitard¹, N. Rassoul¹, H. Dekkers¹, S. Steudel¹, J.I. del Agua Borniquel², B. De Wachter¹, L. Teugels¹, D. Tsvetanova¹, K. Devriendt¹, I. Grisin, G. Boccardi¹, H. Hody¹, M. Nag¹, L. Di Piazza¹, C.J. Wilson¹, G.S. Kar¹, Z. Tokei¹, J. Ramalingam³, Y. Cao³, D.L. Diehl³ (1.imec (Belgium), 2.AMAT Belgium (Belgium), 3.AMAT USA (USA))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 14:30 〜 14:45 |PDF ダウンロード