[H-2-04] Thickness- and orientation-dependence of Curie temperature of ferroelectric epitaxial HfO₂ based films

^○T. Mimura¹, T. Shimizu¹, Y. Katsuya², O. Sakata³, H. Funakubo¹ (1.Tokyo Institute of Technology (Japan), 2.Synchrotron X-ray Station at SPring-8, Research Network and Facility Services Division (Japan), 3.Synchrotron X-ray Group, Research Center for Advanced Measurement and Characterization, NIMS and Synchrotron X-ray Station at SPring-8, Research Network and Facility Services Division (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 16:30 〜 16:45 |PDF ダウンロード

[H-2-05] Memory Window and Endurance Improvement of HfZrO Based FeFETs with ZrO₂ Seed Layers

^○W. Xiao¹, C. Liu¹, Y. Peng², S. Zheng¹, C. Zhang², J. Zhang², Y. Hao², M. Liao¹, Y. Zhou¹ (1.Xiangtan Univ. (China), 2.Xidian Univ. (China))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 16:45 〜 17:00 |PDF ダウンロード

[H-2-06] Polarization Dependency of Time-Dependent Dielectric Breakdown (TDDB)Characteristics in Ferroelectric HfZrO_x

^○T.-H. Yang¹, C.-J. Su², Y.-S. Wang³, K.-H. Kao³, Y.-J. Lee², T.-L. Wu¹ (1.National Chiao Tung Univ. (Taiwan), 2.Taiwan Semiconductor Res. Inst. (Taiwan), 3.National Cheng Kung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 17:00 〜 17:15 |PDF ダウンロード

[H-2-07] Hybrid 6T SRAM Cell Using Hysteretic Negative-Capacitance FETs as Pass-Gate Devices for Low-Voltage Applications

^○K.-Y. Tseng¹, W.-X. You¹, P. Su¹ (1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月3日(火) 17:15 〜 17:30 |PDF ダウンロード

[H-3-01 (Invited)] Ferroelectric HfO₂ for Memory Applications and Unconventional Computing

^○H. Mulaosmanovic¹, E.T. Breyer¹, U. Schröder¹, T. Mikolajick^1,2, S. Slesazeck¹ (1.NaMLab gGmbH (Germany), 2.Chair of Nanoelectronic Materials (Germany))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 09:00 〜 09:30 |PDF ダウンロード

[H-3-02] A Simulation Study on Hf-based Ferroelectric FET Memory Performance

^○K. Takeuchi¹, M. Kobayashi¹, T. Hiramoto¹ (1.Univ. of Tokyo (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 09:30 〜 09:45 |PDF ダウンロード

[H-3-03] Variability Analysis for FeFET NVMs Considering Ferroelectric-Dielectric Phase Distribution

^○Y.S. Liu¹, P. Su¹ (1.National Chiao Tung Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 09:45 〜 10:00 |PDF ダウンロード

[H-3-04] ZrO₂ Anti-Ferroelectric Field Effect Transistor for Non-volatile Memory and Analog Synapse Applications

^○H. Liu¹, S. Zheng¹, G. Han¹, Y. Xu¹, Y. Liu¹, C. Wang², X. Wang², N. Yang³, N. Zhong³, Y. Hao¹ (1.Xidian Univ. (China), 2.Huazhong Univ. of Science and Technology (China), 3.East China Normal Univ. (China))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 10:00 〜 10:15 |PDF ダウンロード

[H-3-05] Design Space Exploration of 1T Non-Volatile Ferroelectric FET Memory for Logic-In-Memory Applications

^○T.-Y. Ho¹, V.P.-H. Hu¹ (1.National Central Univ. (Taiwan))

2019 International Conference on Solid State Devices and Materials |2019年9月4日(水) 10:15 〜 10:30 |PDF ダウンロード

[H-5-01 (Invited)] Next Generation Memory System in Data-centric Computing

^○M. Takahashi¹ (1.Toshiba Memory Corp. (Japan))

2019 International Conference on Solid State Devices and Materials |2019年9月5日(木) 09:00 〜 09:30 |PDF ダウンロード