[K-5-06] Growth of single-grain crystal on SiO₂ sandwiched Au films by micron chevron-shaped laser beam scanning

〇Anh Hoang Pham¹、Wenchang Yeh¹、Shigekazu Morito¹、Takuya Ohba¹ (1.Shimane Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:35 〜 14:42 |PDF ダウンロード

[K-5-07] Sputtering gas pressure dependence on the LaB_xN_y insulator formation

〇Eun-Ki Hong¹、Shun-ichiro Ohmi¹ (1.Tokyo Inst. of Tech.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:42 〜 14:49 |PDF ダウンロード

[K-6-01 (Invited)] Si and SiGe Epitaxial Growth in view of Nanosheet CMOS Devices and 3D Sequential Integration

〇Roger Loo¹、Andriy Hikavyy¹、Clement Porret¹、Erik Rosseel¹、Gianluca Rengo^1,2,3、Rami Khazaka⁴、Qi Xie⁴、André Vantomme²、Robert Langer¹ (1.imec、2.Quantum Solid State Physics, KU Leuven、3.Fonds Wetenschappelijk Onderzoek (FWO) - Vlaanderen、4.ASM Belgium NV)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 15:45 〜 16:15 |PDF ダウンロード

[K-6-02] Solid-phase crystallization of ultra-thin amorphous Ge layers on insulators

〇Ryo Oishi¹、Masashi Kurosawa¹、Osamu Nakatsuka^1,2 (1.Grad. Sch. of Eng., Nagoya Univ.、2.IMaSS, Nagoya Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:15 〜 16:22 |PDF ダウンロード

[K-6-03] Ni-Induced Lateral Crystallization of Densified Amorphous Ge Layer

〇Takamitsu Ishiyama¹、Toshifumi Imajo¹、Takashi Suemasu¹、Kaoru Toko¹ (1.Univ. of Tsukuba)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:22 〜 16:29 |PDF ダウンロード

[K-6-04] First Demonstration of Photoresponsivity in a Polycrystalline Ge-based Thin Film

〇Takuto Mizoguchi¹、Toshifumi Imajo¹、Kenta Moto²、Takashi Suemasu¹、Kaoru Toko¹ (1.Univ. of Tsukuba、2.Kyushu Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:29 〜 16:36 |PDF ダウンロード

[K-6-05] Effect of Sn doping to Solid-Phase Crystallization of Si thin film on Insulator

〇Tomohiro Kosugi¹、Kota Okamoto¹、Taizoh Sadoh¹ (1.Kyushu Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:36 〜 16:43 |PDF ダウンロード

[K-6-06] High Carrier Mobility of Sn-Doped Ge Ultrathin Films on Insulator by Capping-Enhanced Solid-Phase Crystallization

〇Ryutaro Hara¹、Masanori Chiyozono¹、Taizoh Sadoh¹ (1.Kyushu Univ. )

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:43 〜 16:50 |PDF ダウンロード

[K-6-07] SiSn Mediated Formation of Polycrystalline SiGeSn

〇Yosuke Shimura^1,2、Masaki Okado¹、Hirokazu Tatsuoka¹ (1.Shizuoka Univ.、2.Research Inst. of Electronics)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:50 〜 16:57 |PDF ダウンロード

[K-6-08] High Ge-Content SiGe Films Epitaxially Grown by Annealing Al-Ge Alloyed Pastes on Si Substrate

〇Keisuke Fukuda¹、Satoru Miyamoto¹、Masahiro Nakahara ²、Shota Suzuki²、Marwan Dhamrin^2,4、Kensaku Maeda³、Kozo Fujiwara³、Noritaka Usami¹ (1.Nagoya Univ.、2.Toyo Alminium Corp.、3.Tohoku Univ.、4.Osaka Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:57 〜 17:04 |PDF ダウンロード