[J-2-04] Post-deposition N₂ annealing of n-type SnO_x thin-films for carrier-type conversion

〇Kotaro Watanabe¹、Shinya Aikawa¹ (1.Kogakuin Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 16:29 〜 16:36 |PDF ダウンロード

[J-2-05] Abnormal Negative Shift under Positive Bias Illumination Stress in Amorphous In-Ga-Zn-O Thin-Film Transistors

〇Pengfei - Wang¹、Yunfei Liu¹、Yunping Wang¹、Rongsheng Chen²、Zhihe Xia³、Sunbin Deng³、Man Wong³、Hoi Sing Kwok³、Shengdong Zhang¹、Lei Lu¹ (1.School of Electronic and Computer Engineering, Peking Univ., Shenzhen、2.School of Electronic and Information Engineering, South China Univ. of Techn., Guangzhou、3.State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong Univ. of Sci. and Tech.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 16:36 〜 16:43 |PDF ダウンロード

[J-2-06] Vertical Channel Metal-Oxide Semiconductor Gas Sensor to Detect ppb-Level NO₂ at Room Temperature

Ting-Hsuan Huang^1,2、Pei-Yi Li^1,2、Hsin-Fei Meng^1,2、〇Hsiao Wen Zan^1,2、Ping-Hung Yeh³、Chia-Jung Lu⁴、Olivier Soppera^5,6 (1.National Yang Ming Chiao Tung Univ.、2.National Chiao Tung Univ.、3.Tamkang Univ.、4.National Taiwan Normal Univ.、5.Univ. of Haute-Alsace、6.Univ. of Strasbourg)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 16:43 〜 16:50 |PDF ダウンロード

[J-2-07] Sub-ppm Detection of NO₂ gas using IGZO TFT-type Gas Sensor with Optimal Signal-to-Noise Ratio

〇Wonjun Shin¹、Byeongchan Choi¹、Junmo Lee¹、Seongbin Hong¹、Yujeong Jeong¹、Gyuweon Jung¹、Jinwoo Park¹、Donghee Kim¹、Chayoung Lee¹、Jong-Ho Lee¹ (1.Seoul national University)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 16:50 〜 16:57 |PDF ダウンロード

[J-2-08] A bulk ZnO piezoelectric pressure sensor with an Mg_0.57Zn_0.43O thin film deposited by the reactive cosputtering method

〇Haruyuki Endo¹、Takayuki Nihei¹、Kazuyuki Meguro¹、Kazunori Suzuki¹、Akira Barajima¹、Yasube Kashiwaba² (1.Iwate Indus. Res. Inst.、2.Iwate Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 16:57 〜 17:04 |PDF ダウンロード

[J-2-09] Effects of Channel Thickness and Operation Condition on the Sensing Performance of Ultraviolet Photodetectors Based on IGZO Field Effect Diodes

〇Sin-Jhih Huang¹、Meng-Yung Su¹、Chao-Yen Chang¹、Shui-Jinn Wang^1,2、Rong-Ming Ko² (1.Inst. of Microelectronics, Department of Electrical Engineering, National Cheng Kung Univ., Tainan、2.College of Electrical Engineering and Computer Sci., National Cheng Kung Univ., Tainan)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 17:04 〜 17:11 |PDF ダウンロード

[J-4-01 (Invited)] Group-IV materials grown on insulator for advanced thin-film thermoelectric applications

〇Masashi Kurosawa¹、Osamu Nakatsuka¹ (1.Nagoya Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 10:45 〜 11:15 |PDF ダウンロード

[J-4-02] Effects of Layer Exchange Temperature of Multilayer Graphene on Anode Properties in Li-ion Batteries

〇Taisei Suzuki¹、Takashi Suemasu¹、Kaoru Toko¹ (1.Univ. of Tsukuba)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:15 〜 11:22 |PDF ダウンロード

[J-4-03] Controlling the Morphology of Ge Thin Films Crystallized by Gold-Induced Layer Exchange at Low Temperature (220°C)

〇NARIN SUNTHORNPAN¹、Kenjiro Kimura¹、Kentaro Kyuno¹ (1.Shibaura Inst. of Tech.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:22 〜 11:29 |PDF ダウンロード

[J-4-04] Isotropic TFT Mobility in the (100)-Oriented Grain-Boundary-Free Huge Si Thin Film Grown by the Continuous-Wave-Laser Lateral Crystallization

〇Nobuo Sasaki^1,2,3、Muhammad Arif²、Satoshi Takayama²、Jun Gotoh³、Shigeto Sugimoto³、Yukiharu Uraoka² (1.Sasaki Consulting、2.Nara. Inst. of Sci. and Tech.、3.V-Tech.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:29 〜 11:36 |PDF ダウンロード