[A-1-05] Attainment of low subthreshold slope in planar type inversion channel InGaAs NMOSFET with in-situ deposited Al₂O₃/Y₂O₃ as gate dielectrics

〇Lawrence Boyu Young¹、Jun Liu¹、Yen-Hsun Glen Lin¹、Hsien-Wen Wan¹、Jueinai Kwo²、Minghwei Hong¹ (1.National Taiwan Univ.、2.National Tsing Hua Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 14:51 〜 14:58 |PDF ダウンロード

[A-1-06] Effect of Percolation Path on Temperature Dependence of Threshold Voltage Variability in Bulk MOSFETs

〇TOMOKO MIZUTANI¹、KIYOSHI TAKEUCHI¹、TAKUYA SARAYA¹、HIROSHI OKA²、TAKAHIRO MORI²、MASAHARU KOBAYASHI^1,3、TOSHIRO HIRAMOTO¹ (1.IIS, Univ. of Tokyo、2.AIST、3.d.lab, Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |2021年9月7日(火) 14:58 〜 15:05 |PDF ダウンロード

[A-4-01 (Invited)] Technology Enablement for Advanced Logic Nodes using Materials to Systems Co-Optimization^TM Platform

〇Ashish Pal¹、El Mehdi Bazizi¹ (1.Applied Materials)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 10:45 〜 11:15 |PDF ダウンロード

[A-4-02] Introduction of high tensile strain in Ge-on-Insulator structures by oxidation/annealing at high temperature

〇Xueyang Han¹、ChiaTsong Chen¹、Cheol-Min Lim¹、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:15 〜 11:22 |PDF ダウンロード

[A-4-03] Anisotropic Strain States in Extremely-Thin Body Ge-on-Insulator p-type MOSFET Observed by Oil-Immersion Raman Spectroscopy

〇Ryo Yokogawa^1,2、Chia-Tsong Chen³、Kasidit Toprasertpong³、Mitsuru Takenaka³、Shinichi Takagi³、Atsushi Ogura^1,2 (1.Meiji Univ.、2.MREL、3.Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:22 〜 11:29 |PDF ダウンロード

[A-4-04] Low Thermal Budget Epitaxial Lift Off for Ge (111)-on-Insulator Structure

〇Wen-Hsin Chang¹、Hsien-Wen Wan²、Yi-Ting Cheng²、Yen-Hsun G. Lin²、Toshifumi Irisawa¹、Hiroyuki Ishii¹、 Jueinai Kwo³、Minghwei Hong²、Tatsuro Maeda¹ (1.Natl. Inst. of Adv. Indus. Sci. Tech.、2.Grad. Inst. of Appl. Phys. and Dept. of Phys., Natl. Taiwan Univ.、3.Dept. of Phys., Natl. Tsing Hua Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:29 〜 11:36 |PDF ダウンロード

[A-4-05 (Invited)] GeSn/GeSi Stacked Channel Transistors

Chien-Te Tu¹、Bo-Wei Huang¹、Chung-En Tsai¹、Yi-Chun Liu¹、〇Chee Wee Liu¹ (1.National Taiwan Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:36 〜 12:06 |PDF ダウンロード

[A-4-06] Electron Mobility Enhancement in n-GeSn Epitaxial Layers by Tensile Strain

〇Kai-Ying Tien¹、Chia-You Liu¹、Po-Yuan Chiu¹、Yen Chuang¹、Hsiang-Shun Kao¹、Jiun-Yun Li^1,2,3 (1.Graduate Inst. of Electronics Eng., National Taiwan Univ.、2.Department of Electrical Eng., National Taiwan Univ.、3.Taiwan Semiconductor Res. Inst.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 12:06 〜 12:13 |PDF ダウンロード

[A-4-07] In-situ Deposited HfO₂and Y₂O₃ on Epi-Si/p-Ge – a Comparative Study of the Interfacial Properties

〇Tien Yu Chu¹、Hsien Wen Wan¹、Yi Ting Cheng¹、Chao Kai Cheng ¹、Yu Jie Hong¹、Jueinai Kwo²、Minghwei Hong Hong¹ (1.Granduate Institute of Applied Physics and Department of Physics, National Taiwan Univ., Taipei 10617、2.Department of Physics, National Tsing Hua Univ., Hsinchu 30013)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 12:13 〜 12:20 |PDF ダウンロード

[A-5-01] Enhancement of Ferroelectricity in 5-nm HZO Metal-Ferroelectric-Insulator-Semiconductor Technologies by Using Strained TiN Electrode

〇Cheng-Hung Wu¹、Kuan-Chi Wang¹、Yu-Yun Wang¹、Tian-Li Wu¹、Chun-Jung Su²、Yao-Jen Lee²、Chenming Hu^1,3 (1.National Yang Ming Chiao Tung Univ.、2.Taiwan Semiconductor Research Inst.、3.Univ. California, Berkeley )

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:00 〜 14:07 |PDF ダウンロード