[B-3-06] Artificial Synapses Based on Milk Casein Polymer Electric-Double-Layer

〇Sung-Hun Kim¹、Won-Ju Cho¹ (1.Kwangwoon Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 09:58 〜 10:05 |PDF ダウンロード

[B-3-07] Highly Stable-Polymer-Electrolyte Chitosan Memristor with Embedded TiO_x Layer by Microwave-Assisted Oxidation

〇Jin-Gi Min¹、Won-Ju Cho¹ (1.Univ. of Kwangwoon)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 10:05 〜 10:12 |PDF ダウンロード

[B-5-01 (Invited)] Hafnia-based Ferroelectric Tunnel Junction for Emerging Applications

〇Shosuke Fujii¹、Marina Yamaguchi¹、Shoichi Kabuyanagi¹、Kensuke Ota¹、Masumi Saitoh¹ (1.Kioxia Corp.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:00 〜 14:30 |PDF ダウンロード

[B-5-02] Small Array Area, Memory Error Tolerant ReRAM Computation-in-Memory with Log-encoding Simulated Annealing for Combinational Optimization Problems

〇Naoko Misawa¹、Kenta Taoka¹、Chihiro Matsui¹、Ken Takeuchi¹ (1.The University of Tokyo)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:30 〜 14:37 |PDF ダウンロード

[B-5-03] Comprehensive Computation-in-Memory Simulation Platform with Non-volatile Memory Non-Ideality Consideration for Deep Learning Applications

〇Kazuhide - Higuchi¹、Chihiro Matsui¹、Naoko Misawa¹、Ken Takeuchi¹ (1.Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:37 〜 14:44 |PDF ダウンロード

[B-5-04] Design Methods of Computing-in-Memory (CIM) and Ternary Content Addressable Memory (TCAM) using 3D AND-Type Flash Memory to Support Memory-Centric Computing

Po-Kai Hsu¹、〇Hang-Ting Lue¹、Teng-Hao Yeh¹、Keh-Chung Wang¹、Chih-Yuan Lu¹ (1.Macronix Int'l. Co., Ltd.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:44 〜 14:51 |PDF ダウンロード

[B-5-05] Optimal Energetic Trap Distribution of Charge Trap Nitride for Wider V_th Window in 3D NAND Flash Using Machine Learning Methodology

〇Kihoon Nam¹、Chanyang Park¹、Jun-Sik Yoon¹、Hyeok Yun¹、Hyundong Jang¹、Kyeongrae Cho¹、Hojung Kang²、Min Sang Park³、Haesoon Oh²、Jaesung Sim²、Rock-Hyun Baek¹ (1.Department of Electrical Engineering, Pohang Univ. of Sci. and Tech. (POSTECH), Pohang, 37673、2.SK hynix Inc., Cheongju-si, Chungcheongbuk-do, 28429、3.SK hynix Inc., Icheon-si, Gyeonggi-do, 17336)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:51 〜 14:58 |PDF ダウンロード

[B-5-06] Dynamic Flash Memory with Dual Gate Surrounding Gate Transistor (SGT) for Computation In Memory

〇Koji Sakui¹、Nozomu Harada¹ (1.Unisantis Electronics Singapore Pte Ltd.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 14:58 〜 15:05 |PDF ダウンロード

[B-5-07] Impact of endurance characteristics of FeFETs on reservoir computing capabilities

〇Eishin Nako¹、Kasidit Toprasertpong¹、Ryosho Nakane¹、Zeyu Wang¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 15:05 〜 15:12 |PDF ダウンロード

[B-5-08] Cryogenic Operation of NanoBridge at 4K for Controlling Qubit

〇Koichiro Okamoto¹、Takahisa Tanaka²、Makoto Miyamura¹、Hiroki Ishikuro³、Ken Uchida²、Toshitsugu Sakamoto¹、Munehiro Tada¹ (1.NanoBridge Semiconductor, Inc.、2.Univ. of Tokyo、3.Keio Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 15:12 〜 15:19 |PDF ダウンロード