H₂ ambient

〇Tianlin Yang¹、Koji Kita¹ (1.Univ. of Tokyo)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:36 〜 11:43 |PDF ダウンロード

[D-4-06] The Exceptional Advantages of Channeling Implantation into 4H-SiC to make Abrupt Deep Profiles

〇Ryota Wada¹、Tsutomu Nagayama¹、Nobuhiro Tokoro¹、Takashi Kuroi¹、Hrishikesh Das²、Swapna Sunkari²、Joshua Justice² (1.NISSIN ION EQUIPMENT CO.,LTD.、2.ON Semiconductor)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:43 〜 11:50 |PDF ダウンロード

[D-4-07] Effects of the ion implantation process on carrier lifetimes in 4H-SiC SJ-MOSFET

〇Takuya Fukui¹、Takeshi Tawara²、Masashi Kato¹ (1.Nagoya Institute of Technology、2.National Institute of Advanced Industrial Science and Technology)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:50 〜 11:57 |PDF ダウンロード

[D-4-08] Zigzag Structure of Partial Dislocations Expanded from Basal Plane Dislocation Segment near the Epilayer Surface of 4H-SiC

〇Johji Nishio¹、Chiharu Ota¹、Ryosuke Iijima¹ (1.Toshiba Corp.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 11:57 〜 12:04 |PDF ダウンロード

[D-4-09] Characterization of Local Strain in 4H-SiC Trench MOSFET by Synchrotron Nanobeam X-ray Diffraction

〇Wakana Takeuchi¹、Eiji Kagoshima²、Kazushi Sumitani³、Yasuhiko Imai³、Shigehisa Shibayama⁴、Mitsuo Sakashita⁴、Shigeru Kimura³、Hidemoto Tomita²、Tsuyoshi Nishiwaki²、Hirokazu Fujiwara²、Osamu Nakatsuka⁴ (1.Aichi Inst. of Tech.、2.MIRISE Tech.、3.JASRI、4.Nagoya Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 12:04 〜 12:11 |PDF ダウンロード

[D-6-01 (Invited)] Recent progress in crystal growth of β-Ga₂O₃ for power-device applications

〇Kohei Sasaki¹、Akito Kuramata¹ (1.Novel Crystal Tech., Inc.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 15:45 〜 16:15 |PDF ダウンロード

[D-6-02] High-temperature annealing of α- and β-Ga₂O₃ epitaxial films grown by liquid-injection MOCVD

〇Milan Tapajna¹、Filip Gucmann¹、Kristina Husekova¹、Peter Nadazdy¹、Edmund Dobrocka¹、Fridrich Egyenes-Porsok¹、Juraj Priesol²、Alexander Satka² (1.Institute of Electrical Engineering SAS、2.Institute of Electronics and Photonics, Slovak University of Technology, Faculty of Electrical Engineering and Information Technology)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:15 〜 16:22 |PDF ダウンロード

[D-6-03] Structures and Stability of GaN/ β-Ga₂O₃ Interface: A First-Principles Study

〇Fumiaki Hishiki¹、Toru Akiyama¹、Takahiro Kawamura¹、Tomonori Ito¹ (1.Mie University)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:22 〜 16:29 |PDF ダウンロード

[D-6-04] DC Characteristics of the p-NiO_x/n-Ga₂O₃ Junction FETs Based on Heterointegrated Ga₂O₃-on-SiC by Ion Cutting Process

〇Haodong Hu¹、Hehe Gong²、Wenhui Xu³、Yibo Wang¹、Tiangui You³、Genquan Han¹、Jiandong Ye²、Xin Ou³、Yan Liu¹、Yue Hao¹ (1.Xidian University、2.Nanjing University、3.Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:29 〜 16:36 |PDF ダウンロード

[D-6-05] DFT study on structure and anisotropy of high N-atom density layer in 4H-SiC

〇Naoki Komatsu¹、Yoshiyuki Egami²、Tomoya Ono¹、Mitsuharu Uemoto¹ (1.Kobe Univ.、2.Hokkaido Univ.)

2021 International Conference on Solid State Devices and Materials |2021年9月8日(水) 16:36 〜 16:43 |PDF ダウンロード