[PS-10-10] Impact of Post-growth Slow-cooling Process on the Growth of Rocksalt-structured MgZnO Films by Mist CVD

^○Kotaro Ogawa¹, Wataru Kosaka¹, Hiroya Kusaka¹, Yuichi Ota², Tomohiro Yamaguchi¹, Tohru Honda¹, Kentaro Kaneko³, Shizuo Fujita⁴, Takeyoshi Onuma¹ (1. Kogakuin Univ. (Japan), 2. Tokyo Metropolitan Industrial Technology Research Inst. (Japan), 3. Ritsumeikan Univ. (Japan), 4. Kyoto Univ. (Japan))

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[PS-11-01] Three-dimensional structure of threading screw dislocation at deep location in 4H-SiC using step-scanning X-ray section topography

^○Kotaro Ishiji¹, Akio Yoneyama^1,2, Masayuki Inaba³, Kazunori Fukuda⁴, Atsushi Sakaki⁵, Shinya Ohmagari⁶, Ryuichi Sugie⁷ (1. Kyushu Synchro. Light Res. Center (Japan), 2. Res. Dev. Group, Hitachi, Ltd. (Japan), 3. Nissan ARC, Ltd. (Japan), 4. Kobelco Res. Inst., Inc. (Japan), 5. Nichia Corp. (Japan), 6. National Inst. Adv. Indus. Sci. Tech. (Japan), 7. Toray Res. Center, Inc. (Japan))

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[PS-11-02] Impact of Dot Size on Electron Emission from Multiple-Stacked Si-QDs

^○Katsunori Makihara¹, Shuji Obayashi¹, Yuki Imai¹, Noriyuki Taoka², Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Aichi Inst. Tech. (Japan))

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[PS-11-03] Grain Enlargement of Ultrathin Si Films on Insulators by Sn-Doping

^○Yuki Hanafusa¹, Kota Okamoto¹, Taizoh Sadoh¹ (1. Kyushu Univ. (Japan))

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[PS-11-04] High Carrier Mobility of Sn-Doped Ge Thin-Films (<20 nm) by Thinning Combined with Post-Annealing

^○Taishiro Koga¹, Takaya Nagano¹, Kenta Moto¹, Keisuke Yamamoto¹, Taizoh Sadoh¹ (1. Kyushu Univ. (Japan))

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[PS-11-05] Radical Treatment of Graphene Oxide Using Heated Catalyst, H₂ and NH₃ Gas

^○Akira Heya¹, Kenta Fujimoto¹, Yoshiaki Matsuo², Junichi Inamoto², Koji Sumitomo¹ (1. Univ. of Hyogo (Japan), 2. Univ. of Hyogo (Japan))

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[PS-11-06] Large-area and phase-controlled MoTe₂ grown by cold-wall chemical vapor deposition on different substrates

^○Ping- Feng Chi¹, Yung-Lan Chuang¹, Jing-Wen Zhang¹, Jing-Jie Wang¹, Zide Yu¹, Ming-Lun Lee², Jinn-Kong Sheu¹ (1. Univ. of NCKU (Taiwan), 2. Univ. of STUST (Taiwan))

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[PS-11-07] Formation of Micron-Thick Ge by Trench-Filling Epitaxy Using a Patterned (001) Si Substrate with a <100>-Oriented Trench Array

^○Takumi Maeda¹, Kota Kato¹, Jose A. Piedra-Lorenzana¹, Takeshi Hizawa¹, Tetsuya Nakai², Yasuhiko Ishikawa¹ (1. Toyohashi Univ. of Tech. (Japan), 2. SUMCO Corp. (Japan))

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[PS-11-08] Epitaxial Temperature Effect on the Band Alignment of MoS₂/GaN Heterojunction Measured by X-ray Photoelectron Spectroscopy

^○Ray-Yu Hong¹, Ing-Song Yu¹, Ping-Yu Tsai², Po-Hung Wu³ (1. National Dong Hwa Univ. (Taiwan), 2. National Chung-Shan Inst. of Sci. & Tech. (Taiwan), 3. Stone & Resource Industry R&D Center (Taiwan))

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[PS-11-09] Ultra-High Concentration Doping by Excimer Laser Annealing Using Solid-Diffusion Source

^○Ren Aoki¹, Keita Katayama¹, Daisuke Nakamura¹, Hisato Yabuta¹, Hiroshi Ikenoue¹, Taizoh Sadoh¹ (1. Kyushu Univ. (Japan))

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