[PS-3-05] Investigation of Spin-Orbit-Torque-induced modulation of magnetization dynamics via rectifying planar Hall effect

^○Akinobu Yamaguchi¹ (1. University of Hyogo (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-06] Chemical Mechanical Polishing for Indium Bond Pad Damascene Processing

^○Karl Gerard Herman Ceulemans¹, Ehsan Shafahian¹, Katia Devriendt¹, Herbert Struyf¹, Jaber Derakhshandeh¹ (1. IMEC (Belgium))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-07 (Late News)] Light Enhanced Direct Copper Bonding and the Drop Test Reliability

Zong-Yu Xie¹, Po-Kai Huang¹, ^○Wei-Ting Chen¹, Chih-Pin Hung², Kiyokazu Yasuda³, Jenn-Ming Song^1,3,4 (1. National Chung Hsing University (Taiwan), 2. Advanced Semiconductor Engineering Group (Taiwan), 3. Division of Materials and Manufacturing Science (Japan), 4. Innovation and Development Center of Sustainable Agriculture (Taiwan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-08 (Late News)] Surface Activated Thermo-compression Bonding of GaN to Carbon-composite and Diamond Substrate for Heat Dissipation System Applications

Nora Martinez¹, Akio Wakejima², Atsushi Tanaka³, ^○Tadatomo Suga¹ (1. Meisei Univ. (Japan), 2. Nagoya Inst. Tech. (Japan), 3. Nagoya Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-01] Turn-Off Switching Voltage Surge Analysis with Dependence on IGBT Cell Design

Yuri Fujimoto¹, Shin-ichi Nishizawa¹, ^○Wataru Saito¹ (1.Kyushu Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-02] Investigation of Problems with Current Filament Simulation Model for Two-dimensional Multi-cell Structure in IGBTs

^○Takeshi Suwa¹, Kozo Kinoshita¹ (1. Toshiba Electronic Devices & Storage Corp. (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-03] A 4H-SiC p-channel IGBT with Higher Breakdown Voltage and Superior VF·Crss FOM

Erjun Wang^1,2, Xiaoli Tian¹, ^○Wei Wei^1,2, Yun Bai¹, Jilong Hao¹, Chengyue Yang¹, Yidan Tang¹, Xinyu Liu¹ (1. Inst. of Microelectronics of the Chinese Academy of Sci. (China), 2. the Chinese Academy of Sci. (China))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-04] Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC

^○Kazuhiro “-” TANAKA¹, Masashi “-” KATO¹ (1. Nagoya Institute Technology (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-05] First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO₂ Interface

^○Shun - Matsuda¹, Toru - Akiyama¹, Tetsuo - Hatakeyama², Kenji - Shiraishi³, Takashi - Nakayama⁴ (1. Mie Univ. (Japan), 2. Toyama Pref. Univ. (Japan), 3. Nagoya Univ. (Japan), 4. Chiba Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-06] Wannier-Stark Localization of Electronic States in 4H-SiC MOS Inversion Layer

^○Sachika Nagamizo¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download