[N-6-02] Normally-Off Operation in Vertical Diamond MOSFETs Using Oxidized Si Termination Diamond Channel Formed by Si Molecular Beam Deposition Approaches

^○Kento Narita¹, Kosuke Ota¹, Yu Fu¹, Chiyuki Wakabayashi¹, Atushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1. School of Fundamental Science & Engineering Waseda Univ. (Japan), 2. The Kagami Memorial Research Inst. for Materials Science and Technology (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 11:15 AM - 11:30 AM |PDF Download

[N-6-03] Radiation Effects on 2DHG Diamond MOSFETs with Boron-doped Source and Drain Layers

^○Xuezhen Jia¹, Yukiko Suzuki¹, Sukeyasu Deguchi², Fuga Asai¹, Akira Takahashi¹, Atsushi Hiraiwa¹, Junichi Kaneko², Hiroshi Kawarada^1,3 (1. School of Fundamental Science and Engineering Waseda Univ. (Japan), 2. School of Engineering Hokkaido Univ. (Japan), 3. Kagami Memorial Reasearch Inst. for Materials Science and Technology, Waseda Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 11:30 AM - 11:45 AM |PDF Download

[N-7-01 (Invited)] Recent Progress towards high-performance lateral Ga2O3 FETs

^○Andrew Green¹ (1. Air Force Res. Lab. (United States of America))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 1:30 PM - 2:00 PM |PDF Download

[N-7-02] Trap Analysis of Normally-off Ga ₂O ₃ MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization

^○Minghao He^1,2, Mujun Li², Xiaohui Wang², Qing Wang², Hongyu Yu², Kah-Wee Ang¹ (1. National Univ. of Singapore (Singapore), 2. Southern Univ. of Sci. and Tech. (China))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 2:00 PM - 2:15 PM |PDF Download

[N-7-03] High Performance Ga ₂O ₃ Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique

^○Mujun Li¹, Minghao He^2,1, Xiaohui Wang¹, Qing Wang¹, Kah-Wee Ang², Hongyu Yu¹ (1. Southern Univ. of Sci. and Tech. (China), 2. National Univ. of Singapore (Singapore))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 2:15 PM - 2:30 PM |PDF Download

[N-7-04] A Simulation Study of Vertical Ga ₂O ₃ Schottky Barrier Diodes Using Field Plate Termination

^○Yohei Yuda¹, Kohei Ebihara¹, Takuma Nanjo¹, Masayuki Furuhashi¹, Tatsuro Watahiki¹, Kazuyasu Nishikawa¹ (1. Mitsubishi Electric Corp. (Japan))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 2:30 PM - 2:45 PM |PDF Download

[N-7-05] Theoretical Investigation of β-(Al _xGa _1- _x) ₂O ₃/Ga ₂O ₃ Modulation-Doped Field-Effect Transistors with Dual-Metal Gate Structure

^○Xiaole Jia¹, Yibo Wang^1,2, Cizhe Fang¹, Yan Liu¹, Yue Hao¹, Genquan Han¹ (1. Xidian University (China), 2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China))

2023 International Conference on Solid State Devices and Materials |Fri. Sep 8, 2023 2:45 PM - 3:00 PM |PDF Download

[SO-PS-01-01] Amorphous Si-rich Mo silicide films for advanced source/drain contacts

^○Naoya Okada¹, Noriyuki Uchida¹, Toshihiko Kanayama¹ (1. AIST (Japan))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 1:30 PM - 1:32 PM |PDF Download

[SO-PS-01-02] A Simple Way to Fabricate Si N-/P-Channels CFET Using Si/Ge Multilayer Epitaxy, Direct S/D Implantation and Ge Selective Etching

^○Guang- Li Luo¹, Chun-Lin Chu¹, Szu-Hung Chen¹, Wei-Yuan Chang¹, Wen-Fa Wu¹ (1. Taiwan Semiconductor Research Institute (Taiwan))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 1:32 PM - 1:34 PM |PDF Download

[SO-PS-01-03] Effects of HfO₂ and ZrO₂ Seed Layers on the Transition from Antiferroelectric (AFE) to Ferroelectric (FE) of Rich Zr Composition HfO₂-based Film

^○Peilin Zeng¹, Yue Peng¹, Wenwu Xiao², Yan Liu¹, Genquan Han^1,3, Yue Hao¹ (1. Wide Bandgap Semiconductor Technology Disciplines State Key aboratory,School of Microelectronics.Xidian University (China), 2. Xi’an UnilC Semiconductors CompanyLtd. (China), 3. Hangzhou Institute of Technology.Xidian University, Hangzhou (China))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 1:34 PM - 1:36 PM |PDF Download