[A-1-04] Polarization-controlled single-photon emitter combining a colloidal quantum dot and an elliptical split-ring metamaterial element

^○Issei Pribyl¹, Taiki Nakagawa¹, Kyosuke Uchiyama¹, Kohki Mukai¹ (1. Yokohama National Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |Wed. Sep 6, 2023 3:00 PM - 3:15 PM |PDF Download

[A-2-01] Er ₂O ₃ top gate MoS ₂ FET with EOT lower than 1 nm

^○Shuhong Li¹, Tomonori Nishimura¹, Kosuke Nagashio¹ (1. Univ. of Tokyo (Japan))

2023 International Conference on Solid State Devices and Materials |Wed. Sep 6, 2023 4:00 PM - 4:15 PM |PDF Download

[A-2-02] Thermal-aware Design of Metal Nanosheet Sensors for Low-energy, Highly Sensitive Hydrogen Sulfide Nanoscale Sensors

^○Taro Kato¹, Takahisa Tanaka², Ken Uchida¹ (1. Univ. of Tokyo (Japan), 2. Keio Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |Wed. Sep 6, 2023 4:15 PM - 4:30 PM |PDF Download

[A-2-03] Self-Aligned WO _x S/D Contacts to Gate Stacks with TiO _x Nucleation Layer by Multiple-Deposition Method in WSe ₂ pFETs

^○Ryosuke Kajikawa¹, Takamasa Kawanago¹, Iriya Muneta¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1. Tokyo Institute of Technology (Japan))

2023 International Conference on Solid State Devices and Materials |Wed. Sep 6, 2023 4:30 PM - 4:45 PM |PDF Download

[A-2-04] High-Frequency Semiconductor-Graphene-Semiconductor Transistors Using Epitaxial Graphene

Chi Liu^1,2, ^○Xiaoyue Wang^1,2, Haiyan Jiang^1,2, Xuqi Yang^1,2, Zhongying Xue³, Zengfeng Di³, Dongming Sun^1,2 (1. Inst. of Metal Res., Chinese Academy of Sci. (China), 2. Univ. of Sci. and Tech. of China (China), 3. Shanghai Inst. of Microsystem and Info. Tech., Chinese Academy of Sci. (China))

2023 International Conference on Solid State Devices and Materials |Wed. Sep 6, 2023 4:45 PM - 5:00 PM |PDF Download

[A-2-05] High-performance CMOS inverter based on MoTe ₂-FETs achieved by contact doping and channel encapsulation

^○Tianshun Xie¹, Mengnan Ke², Nobuyuki Aoki³ (1. Chiba Univ. (Japan), 2. Chiba Univ. (Japan), 3. Chiba Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |Wed. Sep 6, 2023 5:00 PM - 5:15 PM |PDF Download

[A-2-06 (Late News)] Multilevel Storage Enabled by Light Erasable GNDs Floating Gate Transistor with MoS ₂ Channel

^○Han Hsiang Tai¹, Yu Yuan Su¹, Jer Chyi Wang^1,2,3, Wen Hao Chang^4,5, Chao Sung Lai^1,6,7 (1. Department of Electronic Engineering, Chang Gung Univ. (Taiwan), 2. Department of Neurosurgery, Chang Gung Memorial Hospital (Taiwan), 3. Department of Electronic Engineering, Ming Chi Univ. of Tech. (Taiwan), 4. Research Center for Applied Sciences, Academia Sinica (Taiwan), 5. Department of Electrophysics, National Yang Ming Chiao Tung Univ. (Taiwan), 6.Department of Nephrology, Chang Gung Memorial Hospital (Taiwan), 7.Department of Materials Engineering, Ming Chi Univ. of Tech. (Taiwan))

2023 International Conference on Solid State Devices and Materials |Wed. Sep 6, 2023 5:15 PM - 5:30 PM |PDF Download

[A-3-01 (Invited)] Core-shell Nanowire LEDs Enabled by Polarity-Controlled Growth of Gallium Nitride Nanowire Arrays on Silicon

^○Matt Brubaker¹, Alexana Roshko¹, Todd Harvey¹, Kris Bertness¹ (1. National Inst. of Standards and Tech. (United States of America))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 9:00 AM - 9:30 AM |PDF Download

[A-3-02] Ultra-High Packing Density Vertical GaN Nanocolumn SBDs using Bottom-Up Growth Approach

^○Hiroyuki Shimada¹, Hironobu Kariyazono¹, Yohei Nakagawa¹, Shinji Terao¹, Kentaro Takayanagi¹, Koichiro Akasaka¹, Shunsuke Ishizawa¹, Koichi Morozumi², Rie Togashi³, Katsumi Kishino³ (1. Core Tech. Development Dept., Seiko Epson Corp. (Japan), 2. Material Analysis & CAE Center, Seiko Epson Corp. (Japan), 3. Sophia Nanotech. Res. Center, Sophia Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 9:30 AM - 9:45 AM |PDF Download

[A-3-03] Evaluation of Si and Ge Segregation from Si _0.2Ge _0.8(111) through Al and Ag Layer

^○Taiki Sakai¹, Akio Ohta², Noriyuki Taoka³, Junji Yuhara¹, Katsunori Makihara¹, Yuji Yamamoto⁴, Wei-chen Wen⁴, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Fukuoka Univ. (Japan), 3. Aichi Inst. of Tech. (Japan), 4. IHP (Germany))

2023 International Conference on Solid State Devices and Materials |Thu. Sep 7, 2023 9:45 AM - 10:00 AM |PDF Download