[PS-4-07] First-principles calculation for SiC/SiO₂ interface atomic structure after NO annealing

^○Mizuho Ohmoto¹, Naoki Komatsu¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1. Univ. of Kobe (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-08] Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm²) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact

Shuai Li¹, Bo Li¹, Zhengweng Ma¹, Huakai Yang¹, Shijie He¹, Jiajun Han², Yu Li¹, Xiaohua Li¹, Wei He¹, ^○Xinke - Liu¹ (1. Shenzhen Univ. (China), 2. South China Normal Univ. (China))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-09] High Quality GaN Epitaxy and SAW Resonators on Sapphire Substrates with Cross-Stacked Carbon Nanotube Films

^○lei xiao¹, Guofang Yu¹, Renrong Liang¹, Jun Xun¹, Yang Wei¹, Jing Wang¹ (1. Univ. of Tsinghua (China))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-10] AlGaN/GaN MIS-HEMT on PVD-Grown AlN-on-Si wafer for Power Applications

^○Bing- Syuan Li¹, Tsung-Han Chiang², You-Chen Weng³, Tsung-Ying Yang², Edward Yi Chang^2,4, Chin-Han Chung², Michel Khoury⁵, Helen Zhao⁵ (1. Master’s Degree Program of Applied Science and Technology, College of Science, National Yang Ming Chiao Tung Univ. (Taiwan), 2. International College of Semiconductor Technology, National Yang Ming Chiao Tung Univ. (Taiwan), 3. College of Photonics, National Yang Ming Chiao Tung Univ. (Taiwan), 4. Department of Materials Science and Engineering, National Yang Ming Chiao Tung Univ. (Taiwan), 5. Applied Materials, Ltd. (United States of America))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-11] Impact of Different Ohmic Etching Patterns on the K- and Ka-Band Noise Figure of AlGaN/GaN HEMTs

^○Ming-Wen Lee^1,2, Yueh-Chin Lin¹, Cheng-Wei Chuang¹, Edward Yi Chang^1,3 (1. International College of Semiconductor Technology, National Yang Ming Chiao Tung Univ. (Taiwan), 2. Department of Electronics and Computer Technology, Univ. of Granada (Spain), 3. Inst. of Microengineering and Nanoelectronics, Univ. Kebangsaan Malaysia (Malaysia))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-12] Full-Band Monte Carlo Analysis of Strain Effects on Carrier Transport in GaN

^○Wataru Miyazaki¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-13] Improvement of Noise and Output Power Performance in GaN HEMT with Thick Cu-Interconnection for Satellite System Applications

^○Po-Wei CHEN¹, Chieh Cheng¹, Yueh-Chin Lin¹, Edward Yi Chang¹ (1. Univ. National Yang Ming Chiao Tung (Taiwan))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-14] Machine Learning Framework to Extract Small Signal Equivalent Circuit Models of AlGaN/GaN HEMTs for Broadband Parametric Analysis

Aasim Ashai¹, Aakash Jadhav¹, Avirup Dasgupta¹, ^○Biplab Sarkar¹, Sourajeet Roy¹ (1. Indian Institute of Technology Roorkee (India))

2023 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-15] Withdrawn

2023 International Conference on Solid State Devices and Materials

[PS-4-16] GaAsSb/InGaAs tunnel FETs using thick SiO₂ mask for regrowth

Ruifeng Xu¹, ^○Jiawei Fan¹, Masakazu Arai², Yasuyuki Miyamoto¹ (1. Tokyo Tech (Japan), 2. Miyazaki Univ. (Japan))

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