[B-6-4] A Novel Sphere-Based Statistical Model for "Local Oxide Thinning" Induced Gate Oxide Breakdown

Huan-Tsung Huang, Ming-Jer Chen (1.Department of Electronics Engineering, National Chiao-Tung University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-6-5] Impact of TDDB Distribution Function on Lifetime Estimation in Ultra-Thin Gate Oxides

Hideki Satake, Akira Toriumi (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-6-6] Gate Oxide Reliability Concern Associated with X-Ray Lithography

Byung Jin Cho, Sun Jung Kim, Chew Hoe Ang, Chung Ho Ling, Moon Sig Joo, In Seok Yeo (1.Department of Electrical Engineering, National University of Singapore, 2.Hyundai Electronics Ind. Co. Ltd., Memory R&D Division)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-6-7] Microscopic Observation of X-Ray Irradiation Damages in Ultra-Thin SiO2 Films

Kenji Ohmori, Tomokazu Goto, Hiroya Ikeda, Akira Sakai, Shigeaki Zaima, Yukio Yasuda (1.Venture Business Laboratory, Nagoya University, 2.Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, 3.Center for Cooperative Research in Advanced Science & Technology, Nagoya University)

2000 International Conference on Solid State Devices and Materials |PDF Download

[B-6-8] A Strong Temperature-Dependent Hole Direct Tunneling Current in p+-Gate/pMOSFET with Ultra-Thin Gate Oxide

Chew-Hoe Ang, Chung-Ho Ling, Zhi-Yuan Cheng, Byung-Jin Cho (1.Department of Electrical Engineering, National University of Singapore)

2000 International Conference on Solid State Devices and Materials |PDF Download

[C-3-1] The Role of Domains in Long Term Reliability

Joe T. Evans, Jr. (1.Radiant Technologies, Inc.)

2000 International Conference on Solid State Devices and Materials |PDF Download

[C-3-2] Hydrogen-Robust Submicron IrOx/PZT/Ir Capacitors for Embedded Ferroelectric Memory

T. Sakoda, T. S. Moise, S. R. Summerfelt, L. Colombo, G. Xing, S. R. Gilbert, A. L. S. Loke, S. Ma, R. Kavari, L. A. Wills, J. Amano (1.Texas Instruments, 2.Agilent Technologies)

2000 International Conference on Solid State Devices and Materials |PDF Download

[C-3-3] Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-FETs Using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si Structures Operating at 3.5V

Eisuke Tokumitsu, Kojiro Okamoto, Hiroshi Ishiwara (1.Precision & Intelligence Laboratory, Frontier Collaborative Research Center, Tokyo Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF Download

[C-3-4] Characterization of Ferroelectric Domain Behavior in MOCVD-PZT Capacitors for CMVP FeRAMs

Kimihiko Ito, Yasunori Mochizuki, Toru Tatsumi, Naoya Inoue, Hiromitsu Hada, Takashi Hase, Yoichi Miyasaka (1.System Devices and Fundamental Research, NEC Corporation, 2.ULSI Device Development Division, NEC Electron Devices, NEC Corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[C-4-1] SPM Studies of Hydrogen-Induced Degradation of Pt/PLZT/Pt Capacitors

Chikako Yoshida, Tetsuro Tamura, Kazuaki Kondo, Kanetake Takasaki (1.Fujitsu Limited, 2.Fujitsu Laboratories Limited)

2000 International Conference on Solid State Devices and Materials |PDF Download