[F-8-05] Realization of High Performance and Flexibility Thermoelectric Module via Hybrid Carbon-Based Materials and Bi₂Te₃ Alloy

^○H.J. You¹, K.H. Chen^1,2, L.C. Chen², T.R. Yang³ (1.Inst. of Atomic and Molecular Sciences, Academia Sinica (Taiwan), 2.Center for Condensed Matter Sciences, National Taiwan Univ. (Taiwan), 3.Department of Physics, National Taiwan Normal Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 15:00 〜 15:15 |PDF ダウンロード

[F-8-06] Flexible thermoelectric SiGe films formed by Al-induced layer exchange

^○K. Kusano¹, A. Yamamoto², T. Suemasu¹, K. Toko^1,3 (1.Univ. of Tsukuba (Japan), 2.AIST (Japan), 3.JST PRESTO (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 15:15 〜 15:30 |PDF ダウンロード

[F-8-07 (Late News)] Solid-phase epitaxial growth of In_xGa_1-xAs on InP substrate

^○Y. Horita¹, K. Hirayama¹, Y. Tominaga¹, H. Morioka², N. Ikenaga³, O. Ueda³ (1.Hiroshima Univ. (Japan), 2.Bruker Japan K.K. (Japan), 3.Kanazawa Institute of Technology (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月13日(木) 15:30 〜 15:45 |PDF ダウンロード

[G-1-01 (Invited)] Fully Aligned Via Integration for beyond 7 nm

^○D. Sil¹, B.D. Briggs¹, C.B. Peethala¹, D.L. Rath¹, J. Lee¹, S. Nguyen¹, N.V. LiCausi³, H. You³, N.A. Lanzillo¹, H. Huang¹, R. Patlolla¹, T. Haigh Jr¹, Y. Xu¹, C. Park³, H.K. Shobha¹, Y. Kim⁴, J. Lee⁴, J. Demarest¹, J. Li¹, G. Lian², M. Ali², C.T. Le², E.T. Ryan³, P. Mennell³, L.A. Clevenger¹, D.F. Canaperi¹, T.E. Standaert¹, G. Bonilla¹, E. Huang¹, K. Choi¹, B.S. Haran¹ (1.IBM Res. (USA), 2.IBM Systems (USA), 3.GLOBALFOUNDRIES Inc. (USA), 4.Samsung Electronics (Korea))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 14:00 〜 14:30 |PDF ダウンロード

[G-1-02] Evaluation of the Grain and Grain Boundary Strength in Copper Interconnections Based on the Order of Atom Arrangement

^○Y. Luo¹, K. Suzuki², H. Miura² (1.Department of Finemechanics, Graduate School of Engineering, Tohoku University (Japan), 2.Fracture and Reliability Research Institute, Graduate School of Engineering, Tohoku University (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 14:30 〜 14:45 |PDF ダウンロード

[G-1-03] Temperature and Humidity Accelerations to Establish Lifetime Prediction Model for Cu-based Metallization

^○P. Gomasang¹, S. Ogiue¹, S. Yokogawa², K. Ueno^1,3 (1.Shibaura Inst. of Tech. (Japan), 2.The Univ. of Electro-communication (Japan), 3.SIT Res. Ctr. for Green Innov. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 14:45 〜 15:00 |PDF ダウンロード

[G-1-04] Electromigration Behavior of Cu/SiCN to Cu/SiCN Hybrid Bonds for 3D Integrated Circuits

^○J. De Messemaeker¹, S.-W. Kim¹, M. Stucchi¹, G. Beyer¹, E. Beyne¹, K. Croes¹ (1.imec (Belgium))

2018 International Conference on Solid State Devices and Materials |2018年9月11日(火) 15:00 〜 15:15 |PDF ダウンロード

[G-3-01 (Invited)] A Moore's law for Packaging

^○S.S. Iyer¹ (1.UCLA (USA))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:00 〜 09:30 |PDF ダウンロード

[G-3-02] CMOS Area Scaling And the Need for High Aspect Ratio Vias

^○B. Briggs¹, S. Guissi², C.J. Wilson¹, J. Ryckaert¹, S. Paolillo¹, K. Vandersmissen¹, J. Versluijs¹, C. Lorant¹, N. Heylen¹, J. Boemmels¹, Z. Tokei¹, Y. Sherazi¹, P. Weckx¹, L. Kljucar¹, M. Van Der Veen¹, G. Boccardi¹, V. DeHeyn¹, A. Gupta¹, J. Ervin³, M. Kamon³ (1.imec (Belgium), 2.Coventor (France), 3.Coventor Inc (USA))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:30 〜 09:45 |PDF ダウンロード

[G-3-03] Ultrafine Pitch TSV Technology Using Directed Self-Assembly for 3D Storage Memory Systems

^○T. Fukushima¹, M. Murugesan¹, M. Koyanagi¹ (1.Tohoku Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 09:45 〜 10:00 |PDF ダウンロード