2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

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922 results (441 - 450)

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[PS-1-27 (Late News)] Nanosheet Number and Width Optimization of Multi Stacked NanoSheet FET for 7-nm Node SoC Application

^○J.-S. Yoon¹, J. Jeong¹, S. Lee¹, R.-H. Baek¹ (1.Pohang University of Science and Technology (Korea))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:56 PM - 4:57 PM |PDF Download

[PS-1-28 (Late News)] Investigation of Gate-All-Around and Double-Gate InGaAs Negative-Capacitance FETs considering Quantum Capacitance

^○S.H. Lin¹, S.E. Huang¹, P. Su¹ (1.National Chiao Tung Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:57 PM - 4:58 PM |PDF Download

[PS-1-29 (Late News)] Improvement of I_ON and S.S. values of p-GaAs_0.51Sb_0.49/In_0.53Ga_0.47As hetero-junction vertical TFETs by using abrupt source impurity profile

^○T. Gotow¹, M. Mitsuhara², T. Hoshi², H. Sugiyama², M. Takenaka¹, S. Takagi¹ (1.The University of Tokyo (Japan), 2.NTT Device Tech. Lab. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:58 PM - 4:59 PM |PDF Download

[PS-1-30 (Late News)] Direct measurement of internal potential in ferroelectric/paraelectric stack for studying Negative Capacitance effects

^○X. Li¹, T. Nishimura¹, A. Toriumi¹ (1.The University of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:59 PM - 5:00 PM |PDF Download

[PS-1-31 (Late News)] Consideration on the effective dipole length in Al₂O₃/SiO₂ and Y₂O₃/SiO₂ interface dipole layers via temperature dependences of their dipole strength

^○S. Nittayakasetwat¹, K. Kita¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 5:00 PM - 5:01 PM |PDF Download

[PS-2-01] Cross-point resistive switching and glucose sensing by using porous Ir electrode in Ir/SiO_x/W memory platform

^○S. Jana¹, M. Dutta¹, S. Maikap¹ (1.Chang Gung University (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:30 PM - 4:31 PM |PDF Download

[PS-2-02] Observation and Distinction of e-RTN and GR-RTN in TMOx-based RRAM

^○T. Gong¹, Q. Luo¹, X. Xu¹, J. Yu¹, D. Dong¹, H. Lv¹, P. Yuan¹, C. Chen¹, J. Yin¹, L. Tai¹, X. Zhu¹, S. Long¹, Q. Liu¹, M. Liu¹ (1.Institute of Microelectronics of Chinese Academy Sciences (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:31 PM - 4:32 PM |PDF Download

[PS-2-03] Exploring the role of nitrogen incorporation in ZrO₂ resistive switching film for enhancing the device performance

^○C. Ye¹ (1.Hubei University (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:32 PM - 4:33 PM |PDF Download

[PS-2-04] Solution-Processed Black Phosphorus Nanoflakes for Integrating High Performance of Nonvolatile Resistive Random Access Memory

^○Y.L. Hsieh¹, C.C. Huang¹, C.Y. Su¹ (1.National Central University (Taiwan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:33 PM - 4:34 PM |PDF Download

[PS-2-05] Artificial Neuron Enabled by A Three-terminal Memristive Device

^○Y. Zhang¹, W. He², L. Shi², R. Zhao¹ (1.Singapore Univ. of Tech. and Design (Singapore), 2.Tsinghua Univ. (China))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 4:34 PM - 4:35 PM |PDF Download

922 results (441 - 450)

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