[PS-4-06] High-Breakdown Voltage Low-leakage Current AlGaN GaN HEMT with Peridodically C-doped GaN Buffer and AlGaN Back Barrier

^○J. Lee¹, J.M. Ju¹, G. Atmaca², J.G. Kim¹, S.H. Kang¹, T. Thingujam¹, Y.S. Lee¹, J.H. Lee¹ (1.Kyungpook National Univ. (Korea), 2.Gazi Univ. (Turkey))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:35 〜 16:36 |PDF ダウンロード

[PS-4-07 (Late News)] Investigation on Parasitic Loss at the AlN/Si Interface for GaN-HEMTs Application

^○Y.H. Chen¹, T.T. Luong¹, V. Nagarajan¹, T.H. Chiang¹, E.Y. Chang¹ (1.National Chiao Tung University (Taiwan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:36 〜 16:37 |PDF ダウンロード

[PS-4-08] Impact of the semiconductor on hexagonal-BN structure for power-supply on chip applications

^○Y. Sato¹, K. Ono¹, M. Nomura¹, S. Matsumoto¹, M. Hasegawa² (1.Kyushu Inst. of Tech. (Japan), 2.AIST (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:37 〜 16:38 |PDF ダウンロード

[PS-4-09] Interface Tuning of metal/β-Ga₂O₃ Schottky barrier diode by Post Thermal Annealing

^○Y. Wang¹, J. Wu¹, G. Han¹, Y. Liu¹, Y. Hao¹ (1.Xidian University (China))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:38 〜 16:39 |PDF ダウンロード

[PS-4-10] Fabrication of In_0.53Ga_0.47As homo-junction TFET with optimized gate stack by employing surface treatment and post metallization annealing

^○M.W. Kong^1,2, S.K. Eom^1,2, C.H. Lee^1,2, H.Y. Cha³, K.S. Seo¹ (1.Seoul National Univ. (Korea), 2.Inter-Univ. Semiconductor Res. Center (Korea), 3.Hongik Univ. (Korea))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:39 〜 16:40 |PDF ダウンロード

[PS-4-11] "Negative bias instability of β-Ga₂O₃ nanomembrane field-effect transistors"

^○J. Ma¹, G. Yoo¹ (1.Soongsil Univ. (Korea))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:40 〜 16:41 |PDF ダウンロード

[PS-4-12 (Late News)] Gate-All-Around In0.53Ga0.47As MOSFETs with Ion=3.3mA/µm (Vgs-Vth=Vds=1V) and gm=3.56 mS/µm (Vds=0.5V) using Plasma-Enhanced Atomic Layer Deposition Technique

^○Y.D. Jin¹, H.Q. Luc¹, W.J. Lin¹, S.K. Yang¹, Y.K. Zhang¹, B.H. Do¹, H.S. Huynh¹, H.M.T. Ha¹, P. Huang¹, W.C. Hsu¹, C.Y. Lin¹, E.Y. Chang¹ (1.National Chiao Tung Univ. (Taiwan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:41 〜 16:42 |PDF ダウンロード

[PS-4-13 (Late News)] Reuse process of sapphire substrates for GaN epitaxial growth using laser lift-off technique

^○I. Watanabe¹, S. Tabata², K. Takahashi², A. Kasamatsu¹ (1.NICT (Japan), 2.DISCO Corp. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:42 〜 16:43 |PDF ダウンロード

[PS-4-14] Evaluations of Minority Carrier Lifetime in FZ-Si Affected by Si-IGBT Processes

^○H. Kobayashi¹, R. Yokogawa^1,2, K. Kinoshita¹, Y. Numazawa¹, A. Ogura¹, S. Nishizawa³, T. Saraya⁴, K. Ito⁴, T. Takakura⁴, S. Suzuki⁴, M. Fukui⁴, K. Takeuchi⁴, T. Hiramoto⁴ (1.Meiji Univ. (Japan), 2.JSPS Research Fellow DC (Japan), 3.Kyushu Univ. (Japan), 4.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:43 〜 16:44 |PDF ダウンロード

[PS-4-15] High-bias-stability Al2O3 films formed by high-temperature annealing after atomic layer deposition

^○K. Horikawa¹, A. Hiraiwa^2,3,4, S. Okubo¹, T. Kageura¹, H. Kawarada^1,2,3 (1.Waseda Univ. (Japan), 2.RONL, Waseda Univ. (Japan), 3.KMRIMST, Waseda Univ. (Japan), 4.IMaSS, Nagoya Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 16:44 〜 16:45 |PDF ダウンロード