[B-4-02] A High-Read-Margin MTJ-Based Fracturable Lookup Table Circuit Using a Series-NMOS-Resistance-Reduced Logic-In-Memory Structure

^○D. Suzuki¹, T. Hanyu¹ (1.Tohoku University (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:15 〜 11:30 |PDF ダウンロード

[B-4-03] A New Architecture of Store Energy and Latency Reduction for Nonvolatile SRAM Based on Spintronics/CMOS-Hybrid Technology

^○D. Kitagata¹, S. Yamamoto¹, S. Sugahara¹ (1.Tokyo Tech (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:30 〜 11:45 |PDF ダウンロード

[B-4-04] Atom-Switch-based FPGA with Optimized Driving Capability Buffer

^○X. Bai¹, M. Miyamura¹, Y. Tsuji¹, R. Nebashi¹, A. Morioka¹, N. Banno¹, K. Okamoto¹, H. Numata¹, H. Hada¹, T. Sugibayashi¹, T. Sakamoto¹, M. Tada¹ (1.NEC Corp. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 11:45 〜 12:00 |PDF ダウンロード

[B-5-01] Study on interface dipole layer strength change by temperature in high-k/SiO₂ and high-k/high-k systems and its possible origin

^○T. Hamaguchi¹, S. Nittayakasetwat¹, K. Kita¹ (1.The University of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 13:30 〜 13:45 |PDF ダウンロード

[B-5-02] XPS Study of Chemical Bonding Features and Inner Potential at Y₂O₃/SiO₂ Interfaces

N. Fujimura¹,^○A. Ohta¹, M. Ikeda¹, K. Makihara¹, S. Miyazaki¹ (1.Nagoya Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 13:45 〜 14:00 |PDF ダウンロード

[B-5-03] Strong Impacts of Top Blocking Layer on Initial Flatband Voltage in Hf-based High-k Charge-Trapping Memory

^○M. Kadoshima¹, M. Inoue¹, T. Maruyama¹, M. Matsuura¹ (1.Renesas Electronics Corp. (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:00 〜 14:15 |PDF ダウンロード

[B-5-04] Thermal oxidation kinetics of Ge under high pressure O₂

^○X. Wang¹, T. Nishimura¹, T. Yajima¹, A. Toriumi¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:15 〜 14:30 |PDF ダウンロード

[B-5-05] A Study of Impact of Incorporating Locations of Yttrium on the Properties of GeO_x/HfO₂-based/TiN Gate Stack Based on Material Reaction

^○C.H. Chou¹, Y.H. Lu¹, Y.H. Tsai¹, A.S. Shih¹, W.K. Yeh², C.H. Chien¹ (1.National Chiao Tung Univ. (Taiwan), 2.National Nano Device Labs. (Taiwan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:30 〜 14:45 |PDF ダウンロード

[B-5-06] Impact of "struggle for oxygen" at oxidized interface on SiGe gate stacks

^○X. Li¹, Y. Noma¹, W. Song¹, T. Nishimura¹, A. Toriumi¹ (1.The University of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 14:45 〜 15:00 |PDF ダウンロード

[B-6-01 (Invited)] Atomic Layer Etching - Breaking Through the Limitation of Etch

^○K. Nojiri¹, K.J. Kanarik², S. Tan², E.A. Hudson², R.A. Gottscho² (1.Lam Res. Co., Ltd. (Japan), 2.Lam Res. Corp. (USA))

2018 International Conference on Solid State Devices and Materials |2018年9月12日(水) 15:15 〜 15:45 |PDF ダウンロード