Oral presentation

[18a-F11-1~8] 9.2 Nanowires, nanoparticles

Tue. Mar 18, 2014 9:30 AM - 11:45 AM F11 (F407)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 9:45 AM

[18a-F11-1] Preparation and Physical Properties of Sulfide Semiconductor Nanoparticles by a Solution-phase Laser Ablation Method

^○Rende Sun¹, Takeshi Tsuji² (Sekisui Chemical Co., Ltd¹, Kyushu Univ.²)

9:45 AM - 10:00 AM

[18a-F11-2] Crystalline Structure and Magnetic Properties of FePt Alloy Nanodots

^○Ryo Fukuoka¹, Hai Zhang¹, Katsunori Makihara¹, Akio Ohta¹, Yoshihiro Tokuoka¹, Takeshi Kato¹, Satoshi Iwata¹, Seiichi Miyazaki¹ (Nagoya Univ.¹)

10:00 AM - 10:15 AM

△ [18a-F11-3] Photoluminescence Enhancement of Organic Molecules by Silicon Nanoparticles

^○Masanori Maeda¹, Taketoshi Matsumoto¹, Hikaru Kobayashi¹ (ISIR, Osaka Univ.¹)

10:15 AM - 10:30 AM

△ [18a-F11-4] Ultra Flexible Nonvolatile Resistive Memory using Ag-decorated Cellulose Nanopaper

^○Kazuki Nagashima¹, Hirotaka Koga¹, Umberto Celano², Masaki Kanai¹, Takuya Kitaoka³, Masaya Nogi¹, Takeshi Yanagida¹ (ISIR Osaka Univ.¹, imec², Kyusyu Univ.³)

Break 10:30〜10:45 （10:30 AM - 10:45 AM）

10:45 AM - 11:00 AM

[18a-F11-5] Raman scattering study of boron and phosphorus codoped colloidal silicon nanocrystals

^○Masataka Hasegawa¹, Hiroshi Sugimoto¹, Minoru Fujii¹, Kenji Imakita¹ (Kobe Univ.¹)

11:00 AM - 11:15 AM

[18a-F11-6] Fabrication of Si nanocrystal thin film by spin coating colloidal solution

^○Masato Sasaki¹, Hiroshi Sugimoto¹, Kenji Imakita¹, Minoru Fujii¹ (Kobe Univ.¹)

11:15 AM - 11:30 AM

[18a-F11-7] Surface Engineering of nanocrystals by pulse laser

^○Kenta Furuta¹, Hiroshi Sugimoto¹, Kenji Imakita¹, Minoru Fujii¹ (Kobe Univ.¹)

11:30 AM - 11:45 AM

[18a-F11-8] Fluorescent Enhancement by Hybrid Composed of Gold Nanoparticles and Polyaniline

^○Takamasa Kinoshita¹, Tomoaki Nishino¹, Hiroshi shiigi¹, Tsutomu Nagaoka¹ (Osaka Prefecture Univ.¹)

Oral presentation

[18p-F11-1~17] 9.2 Nanowires, nanoparticles

Tue. Mar 18, 2014 1:00 PM - 5:45 PM F11 (F407)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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Lunch 11:45〜13:00 （11:45 AM - 1:00 PM）

1:00 PM - 1:15 PM

[18p-F11-1] Catalyst-free growth of InGaAs nanowires on Si substrate by molecular beam epitaxy under alternating supply

^○Ryosuke Kizu¹, Yoshio Honda¹, Masahito Yamaguchi^1,2, Hiroshi Amano^1,2 (Nagoya Univ.¹, Akasaki Research Center²)

1:15 PM - 1:30 PM

[18p-F11-2] Carrier Concentration Dependence on Crystal Structure and Emission Property of Catalyst-Free MBE-VLS Si-doped GaAs NWs

^○（D）Akio Suzuki¹, Atsuhiko Fukuyama¹, Ji-Hyun Paek², Masahito Yamaguchi², Tetsuo Ikari¹ (Univ. of Miyazaki¹, Nagoya Univ.²)

1:30 PM - 1:45 PM

[18p-F11-3] Improvement of energy conversion efficiency of InGaAs/GaAs nanowire-quantum-dot solar cells via introduction of AlGaAs/GaAs core/shell structures

^○Jun Tatebayashi¹, Katsuaki Tanabe¹, Masao Nishioka², Satoshi Iwamoto^1,2, Yasuhiko Arakawa^1,2 (NanoQUINE, the Univ. of Tokyo¹, IIS, the Univ. of Tokyo²)

1:45 PM - 2:00 PM

△ [18p-F11-4] In-situ characterization of ZnO nano-rod bending deformation and strain-induced bandgap shift using nano-probe cathodoluminescence technique

^○（PC）Kentaro Watanabe^1,2, Volk János³, Seungjun Oh¹, Takashiro Nagata¹, Yutaka Wakayama¹, Takashi Sekiguchi¹ (NIMS¹, Univ. of Tsukuba², MFA³)

2:00 PM - 2:15 PM

[18p-F11-5] Electroluminescence of InP-based nanowires with radial p-i-n structures

^○Kenichi Kawaguchi¹, Hisao Sudo¹, Manabu Matsuda¹, Mitsuru Ekawa¹, Tsuyoshi Yamamoto¹, Yasuhiko Arakawa² (Fujitsu Labs.¹, INQIE, Univ. of Tokyo²)

Break 14:15〜14:30 （2:15 PM - 2:30 PM）

2:30 PM - 2:45 PM

[18p-F11-6] Strain characterization of InP/InAs heterostructure nanowires

^○Guoqiang Zhang¹, Shuhei Nakagawa^1,2, Kouta Tateno¹, Tetsuomi Sogawa¹, Hideki Gotoh¹ (NTT BRL¹, Toyohashi Tech.²)

2:45 PM - 3:00 PM

[18p-F11-7] VLS growth of InAsP nanowires with TBCl

^○Kouta Tateno¹, Guoqiang Zhang¹, Hideki Gotoh¹ (NTT Basic Research Labs.¹)

3:00 PM - 3:15 PM

[18p-F11-8] Gate length reduction via self-aligned source/drain stacks in the InAs nanowire FET

^○Satoshi Sasaki¹, Kouta Tateno¹, Guoqiang Zhang¹, Yuichi Harada¹, Shiro Saito¹, Akira Fujiwara¹, Tetsuomi Sogawa¹, Koji Muraki¹ (NTT BRL¹)

3:15 PM - 3:30 PM

[18p-F11-9] Fabrication of Buried GaAs/AlGaAs Heterostructure Nanowires and Their Wet Oxidation

Hideaki Hibi¹, Masahiko Kondow¹, ^○Fumitaro Ishikawa² (Osaka Univ.¹, Ehime Univ.²)

3:30 PM - 3:45 PM

[18p-F11-10] Theoretical study for thermal conductivity of InAs nanowires: effects of rotational twins

^○Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (Mie University¹)

3:45 PM - 4:00 PM

[18p-F11-11] Screened-exchange density functional calculations of III-V semiconductor polytypes

^○Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹ (Mie University¹)

Break 16:00〜16:15 （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

[18p-F11-12] Fabrication of hetero junction of Ge/Si core-shell nanowire and Si nanowire

^○Koudai Morita¹, Tomohiro Noguchi¹, Marolop Simanullang¹, Kouichi Usami¹, Tetsuo Kodera¹, shunri Oda¹ (QNERC,Tokyo Tech¹)

4:30 PM - 4:45 PM

[18p-F11-13] Chemical Doping of Tellurium Nanowire Sheets

^○Yoshiyuki Nonoguchi¹, Fumihiko Kamikonya¹, Tsuyoshi Kawai¹ (Nara Inst. Sci. Tech.¹)

4:45 PM - 5:00 PM

[18p-F11-14] Formation of ITO Nanowires using Conventional Magnetron Sputtering

^○Naoki Yamamoto¹, Kirihiko Morisawa¹, Junnosuke Murakami², Yasuhiro Nakatani² (Kochi Univ. Technol.¹, Sekisui Chemical Co.²)

5:00 PM - 5:15 PM

[18p-F11-15] Analyses of Electrical and Gas Sensing Properties of Hydrothermal Titanate Nanotubes

^○Masayuki Ishii¹, Ji-Won Lee², Masahiro Terauchi², Takeshi Yoshimura¹, Tadachika Nakayama², Norifumi Fujimura¹ (Osaka Pref. Univ.¹, Nagaoka Univ. of Tech.²)

5:15 PM - 5:30 PM

[18p-F11-16] Fabrication of GaAs nanowires by anodic etching

^○Hidetaka Asoh¹, Sachiko Ono¹ (Kogakuin Univ.¹)

5:30 PM - 5:45 PM

[18p-F11-17] Enhancement of Thermoelectric Properties via Radial Dopant Distribution in Boron-doped Silicon Nanowires

Fuwei Zhuge¹, ^○Takeshi Yanagida¹, Naoki Fukata², Ken Uchida³, Masaki Kanai¹, Kazuki Nagashima¹, Gang Meng¹, He Yong¹, Sakon Rahong¹, Tomoji Kawai¹ (ISIR Osaka Univ¹, NIMS², Keio Univ³)

Poster presentation

[19a-PA6-1~13] 9.2 Nanowires, nanoparticles

Wed. Mar 19, 2014 9:30 AM - 11:30 AM PA6 (アリーナ)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[19a-PA6-1] Ultrafast and Wide Range Analysis of DNA Molecules Using Tunable Rigid Network Structure of Solid Nanowires

Sakon Rahong¹, ^○Takeshi Yanagida¹, Takao Yasui², Masaki Kanai¹, Kazuki Nagashima¹, Noritada Kaji², Yoshinobu Baba², Tomoji Kawai¹ (ISIR Osaka Univ¹, Nagoya Univ²)

9:30 AM - 11:30 AM

[19a-PA6-2] Flux Induced Crystal Phase Transition in Vapor-Liquid-Solid Growth of Indium-Tin Oxide Nanowires

Gang Meng¹, ^○Takeshi Yanagida¹, Kazuki Nagashima¹, Masaki Kanai¹, Tomoji Kawai¹ (Osaka Univ¹)

9:30 AM - 11:30 AM

[19a-PA6-3] Size Selective Rule of Nanowire Alignment by Solution based Coating Method

Yong He¹, ^○Kazuki Nagashima¹, Takeshi Yanagida¹, Masaki Kanai¹, Gang Meng¹, Fuwei Zhuge¹, Sakon Rahong¹, Tomoji Kawai¹ (ISIR Osaka Univ.¹)

9:30 AM - 11:30 AM

[19a-PA6-4] Growth and characterization of Ge/Si core/shell nanowire heterostructures

^○Mingke Yu^1,2, Jun Kaminaga^1,2, Naoki Fukata¹ (NIMS¹, Univ. of Tsukuba²)

9:30 AM - 11:30 AM

▲ [19a-PA6-5] Core-shell homojunction Si nanowire solar cells: Effect of shell growth and doping conditions on their photovoltaic properties

^○Dutta Mrinal¹, Naoki Fukata¹ (NIMS¹)

9:30 AM - 11:30 AM

[19a-PA6-6] Cell performances of silicon nanowire/polymer hybrid solar cells －Effects of nanowire length and annealing temperature－

^○Keisuke Sato^1,2, Dutta Mrinal¹, Naoki Fukata¹ (NIMS¹, Tokyo Denki Univ.²)

9:30 AM - 11:30 AM

[19a-PA6-7] Fine Particle Integration using Electrostatic Adsorption Technique

Tsuyoshi Kamaki¹, ^○Atsushi Maeda¹, Hiroyuki Muto², Atsunori Matsuda² (Osaka Pref. Univ. Coll. Tech.¹, Toyohashi Univ. Tech.²)

9:30 AM - 11:30 AM

[19a-PA6-8] In situ XRD/SAXS measurements in Au-catalyzed InGaAs nanowires

^○Takuo Sasaki¹, Ryota Deki^1,2, Yuka Nakata^1,2, Masamitu Takahasi^1,2 (JAEA¹, Univ. of Hyogo²)

9:30 AM - 11:30 AM

[19a-PA6-9] Formation of Nanoparticles to the Pores of Mesoporous Silica Thin Film and Materials Properties of TiO₂ Nanoparticles-Containing Film

Yasuhiro Hidaka¹, Katsumi Koga¹, Tajiri Takayuki¹, ^○Atsushi Kohno¹ (Fukuoka Univ.¹)

9:30 AM - 11:30 AM

△ [19a-PA6-10] Growth of wurtzite InP/AlGaP core-shell nanowires by selective-area MOVPE

^○Fumiya Ishizaka¹, Katsuhiro Tomioka^1,2, Takashi Fukui¹ (GS-IST and RCIQE, Hokkaido Univ.¹, JST-PRESTO²)

9:30 AM - 11:30 AM

[19a-PA6-11] Application of Electrospun Graphite Nanowire Sheets to Photorechargeable Devices

^○Naohito Taniguchi¹, Naoki Hirakawa², Yuji Horie¹, Teruaki Nomiyama¹ (Kagoshima Univ.¹, Kagoshima Univ.²)

9:30 AM - 11:30 AM

△ [19a-PA6-12] SA-MOVPE of AlGaAs Nanostructures on Amorphous Glass Substrate Using Al₂O₃ Interlayer

^○Shinya Sakita¹, Hiroaki Kato¹, Shinjiro Hara¹ (RCIQE, Hokkaido Univ.¹)

9:30 AM - 11:30 AM

[19a-PA6-13] Growth of nanorod on porous silicon by high-press water-vapor annealing

^○（M1C）Hiroyuki Yui¹, Bernard Gelloz², Lianhua Jin¹ (Univ. of Yamanashi¹, Nagoya Univ.²)

Sessions

09. Applied Materials Science » 9.2 Nanowires, nanoparticles

[18a-F11-1~8] 9.2 Nanowires, nanoparticles

△ [18a-F11-3] Photoluminescence Enhancement of Organic Molecules by Silicon Nanoparticles

△ [18a-F11-4] Ultra Flexible Nonvolatile Resistive Memory using Ag-decorated Cellulose Nanopaper

[18p-F11-1~17] 9.2 Nanowires, nanoparticles

△ [18p-F11-4] In-situ characterization of ZnO nano-rod bending deformation and strain-induced bandgap shift using nano-probe cathodoluminescence technique

[19a-PA6-1~13] 9.2 Nanowires, nanoparticles

▲ [19a-PA6-5] Core-shell homojunction Si nanowire solar cells: Effect of shell growth and doping conditions on their photovoltaic properties

△ [19a-PA6-10] Growth of wurtzite InP/AlGaP core-shell nanowires by selective-area MOVPE

△ [19a-PA6-12] SA-MOVPE of AlGaAs Nanostructures on Amorphous Glass Substrate Using Al2O3 Interlayer

△ [19a-PA6-12] SA-MOVPE of AlGaAs Nanostructures on Amorphous Glass Substrate Using Al₂O₃ Interlayer