Poster presentation

[11a-P4-1~18] 6.2 Carbon-based thin films

Wed. Mar 11, 2015 9:30 AM - 11:30 AM P4 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:30 AM - 11:30 AM

[11a-P4-1] Development of Inexpensive Microwave Plasma CVD Apparatus with Metal Reaction Chamber for High-Quality Diamond Synthesis

〇Msakazu Miyata¹, Osamu Maida¹, Shouhei Nankou², Toshimichi Ito¹ (1.Osaka Univ., 2.Nisshin Inc.)

9:30 AM - 11:30 AM

[11a-P4-2] Homoepitaxial growth of phosphorus-doped diamond thin films on {111} substrates with various misorientation angles

〇(PC)Takashi Yamamoto¹, Satoshi Koizumi¹ (1.NIMS)

9:30 AM - 11:30 AM

[11a-P4-3] Localization of Degenerate Regions in Heavily-Boron-Doped Diamond Thin Film and Fabrication of their Multilayered Structure

〇Tomohiro Tabuchi¹, Osamu Maida¹, Toshimichi Ito¹ (1.Osaka Univ.)

9:30 AM - 11:30 AM

[11a-P4-4] Fabrication of Periodic High-Quality Diamond Columns with ≈1-μm DiameterUsing Conventional Lithography Process and their Application to Particle Detector

〇Akito Shimizu¹, Osamu Maida¹, Toshimichi Ito¹ (1.Osaka Univ.)

9:30 AM - 11:30 AM

[11a-P4-5] Selective growth of highly-oriented boron-doped diamond on Si substrates

〇(M1C)Kazuki Komiya¹, Naoto Ichikawa¹, Ryuhei Kojima¹, Yuji Soma¹, Hideo Isshiki¹ (1.UEC)

9:30 AM - 11:30 AM

[11a-P4-6] Characterization of deep defects in boron-doped CVD diamond films using transient photocapacitance method

〇Takanori Hori¹, Osamu Maida¹, Toshimichi Ito¹ (1.Osaka Univ.)

9:30 AM - 11:30 AM

[11a-P4-7] Imaging of Diamond Defect Sites by Electron Beam Induced Current

〇Shozo Kono¹, Tokuyuki Teraji², Hideyuki Kodama¹, Atsuhito Sawabe¹ (1.Aoyama Gakuin Univ., 2.NIMS)

9:30 AM - 11:30 AM

▼ [11a-P4-8] Role of the oxygen interlayer on electrical properties of WC/p-diamond Schottky diodes

〇(PC)Alexandre FIORI¹, Tokuyuki TERAJI¹, Jose PINERO², Daniel ARAUJO², Yasuo KOIDE¹ (1.NIMS, 2.University of Cadiz)

9:30 AM - 11:30 AM

[11a-P4-9] Si-V center emission from nano-diamond formed by atomic Si induced nucleation

〇Ryuhei Kojima¹, Naoto Ichikawa¹, Kazuki Komiya¹, Yuji Soma¹, Hideo Isshiki¹ (1.UEC)

9:30 AM - 11:30 AM

[11a-P4-10] Silver coating to diamond powder(2)

〇(M1)TOSHIAKI IYAMA¹, Ryuji Oshima¹, Kanji Iizuka¹ (1.Nippon Institute of Technology)

9:30 AM - 11:30 AM

[11a-P4-11] Characterization of a-C:H Films Fabricated by Various Hydrocarbon Gases at Cryogenic Temperature

〇Takashi Saito¹, Eiji Naito¹, Naoki Kobayashi¹, Satou tetsuya¹ (1.Univ of Yamanashi,)

9:30 AM - 11:30 AM

△ [11a-P4-12] Analysis on interface of DLC film fabricated by RF plasma CVD using X-ray reflectometry

〇Tooru Harigai¹, Yuki Yasuoka¹, Hiroshi Furuta^1,², Akimitsu Hatta^1,² (1.Kochi Univ. Technol., 2.Center for Nanotechnol., Research Inst., Kochi Univ. Technol.)

9:30 AM - 11:30 AM

[11a-P4-13] Effect of stable isotopes on electronic properties of amorphous carbon film

〇Yutaro Suzuki¹, Tsuneo Suzuki², Kazuhiro Kanda³, Naoto Ohtake¹, Hiroki Akasaka¹ (1.Tokyo Inst. of Tech., 2.Nagaoka Univ. of Tech., 3.Univ. of Hyogo)

9:30 AM - 11:30 AM

△ [11a-P4-14] Development of the simulation program, working on Excel, of C-K edge NEXAFS spectra of DLC film for estimation of sp²/(sp²+sp³) ratio

〇Hiroki Takamatsu^1,² (1.Hyogo Univ., 2.lasti)

9:30 AM - 11:30 AM

[11a-P4-15] The measurement of the adhesion strength of the a-C:F films formed at cryogenic temperature to the substrate by a micro scratch test

〇Haruka Soga¹, Kota Yamai¹, Kyohei Morikawa¹, Tetuya Sato¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)

9:30 AM - 11:30 AM

[11a-P4-16] Thermal annealing of iodine-doped amorphous carbon thin films prepared by PBII method

〇(M2)Tomohiro Mizokami¹, Nakao Setsuo², Kishi Naoki¹, Soga Tetsuo¹ (1.meikou Univ., 2.AIST)

9:30 AM - 11:30 AM

[11a-P4-17] Analysis of dissociative excitation reaction of organosilicon materials in microwave discharge flow of Ar.

〇(M1)Syunsuke Saeki¹, Kumakura Motoki¹, Ito Haruhiko¹ (1.Nagaoka Univ. of Tech.)

9:30 AM - 11:30 AM

△ [11a-P4-18] Effects of Long-term Irradiation on Photo-induced Volume Changes of a-CN_x Films

〇Tomo Harata¹, Masami Aono¹, Nobuaki Kitazawa¹, Yoshihisa Watanabe¹ (1.NDA)

Oral presentation

[11p-C1-1~17] 6.2 Carbon-based thin films

Wed. Mar 11, 2015 1:15 PM - 6:00 PM C1 (6C-104)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

1:15 PM - 1:30 PM

[11p-C1-1] Effects of substrate temperature and nitrogen introduction on single-crystalline growth by plasma CVD

〇Hideaki Yamada¹, Akiyoshi Chayahara¹, Yoshiaki Mokuno¹ (1.AIST)

1:30 PM - 1:45 PM

[11p-C1-2] Misorientation angle dependence of homoepitaxial growth on (001) heavily boron-doped diamond

〇(DC)Hiroyuki Kawashima^1,^2,³, Hiromitsu Kato^2,³, Masahiko Ogura^2,³, Toshiharu Makino^2,³, Daisuke Takeuchi^2,³, Satoshi Yamasaki^1,^2,³ (1.Univ. of Tsukuba, 2.AIST, 3.JST/CREST)

1:45 PM - 2:00 PM

△ [11p-C1-3] Evaluation of superconducting boron-doped diamond thin film critical thickness using X-ray diffraction

〇(B)Masanobu SHIBATA¹, Taisuke Kageura¹, Takahide Yamaguchi², Yoshihiko Takano², Kawarada Hiroshi¹ (1.Waseda Univ., 2.NIMS)

2:00 PM - 2:15 PM

[11p-C1-4] Characterization of heavily phosphorus doped n-type diamond thin films

〇(PC)Ryota Ohtani¹, Takashi Yamamoto¹, Satoshi Koizumi¹ (1.NIMS)

2:15 PM - 2:30 PM

[11p-C1-5] X-ray Topography Observation of (110) HPHT type-IIa Diamond Single Crystal

〇Makoto Kasu¹, Ryuichi Murakami¹, Satoshi Masuya¹, Takuya Uematsu¹, Hitoshi Sumiya² (1.Saga Univ., 2.Sumitomo Electric.)

2:30 PM - 2:45 PM

▼ [11p-C1-6] Direct observation and mechanism for enhanced electron emission sites in Pt ion implanted/post-annealed ultra nanocrystalline diamond films

〇(PC)Kalpataru Panda¹, Eiichi Inami¹, K. J Sankaran², Yoshiaki Sugimoto¹, N-H Tai², I-Nan Lin³ (1.Osaka Univ., 2.NTHU, 3.Tamkang Univ.)

Break （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

△ [11p-C1-7] Heteroepitaxial growth of diamond on Ir by grid-patterned nucleation region

〇Kimiyoshi Ichikawa¹, Hideyuki Kodama¹, Kazuhiro Suzuki², Atsuhito Sawabe¹ (1.Aoyama Gakuin Univ., 2.TOPLAS ENGINEERING CO.)

3:15 PM - 3:30 PM

[11p-C1-8] Heteroepitaxial growth of diamond on cubic boron nitride (c-BN) thin films

〇Kazuyuki Hirama¹, Yoshitaka Taniyasu¹, Shin-ichi Karimoto¹, Hideki Yamamoto¹ (1.NTT BRL)

3:30 PM - 3:45 PM

[11p-C1-9] Band diagram for chemical vapor deposition diamond surface conductive layer: Reconfirmation of downward band bending very near the surface

〇Shozo Kono¹, Daisuke Takeuchi², Hideyuki Kodama¹, Atsuhito SAwabe¹ (1.Aoyama Gakuin Univ., 2.AIST)

3:45 PM - 4:00 PM

△ [11p-C1-10] ATP detection via aptamer by diamond surface control

〇(B)takuro naramura¹, Evi Suaebah¹, Miho Myodo¹, Mikinori Kobayasi¹, Masafumi Inaba¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (1.Waseda Univ.)

Break （4:00 PM - 4:15 PM）

4:15 PM - 4:30 PM

[11p-C1-11] (111) diamond growth for fabrication of ensemble NV centers

〇Hayato Ozawa¹, Takayuki Iwasaki^1,², Kousuke Tahara¹, Satoko Furuyama¹, Maki Shimizu^1,², Mutsuko Hatano^1,² (1.Titech, 2.CREST)

4:30 PM - 4:45 PM

[11p-C1-12] Alignment and preferential orientation of nitrogen-vacancy centers formed during chemical vapor deposition diamond growth on (111) surfaces

〇Tokuyuki Teraji¹, Julia Michl², Sebastian Zaiser², Ingmar Yakobi², Gerald Waldherr², Florian Dolde², Philipp Neumann², Marcus Doherty³, Neil Manson³, Junichi Isoya⁴, Jorg Wrachtrup² (1.NIMS, 2.Univ. Stuttgart, 3.Australian National Univ., 4.Univ. Tsukuba)

4:45 PM - 5:00 PM

[11p-C1-13] Alignment mechanism of nitrogen-vacancy complex defects in diamond (111) substrates

〇Takehide Miyazaki^1,², Yoshiyuki Miyamoto^1,², Toshiharu Makino^1,³, Hiromitsu Kato^1,³, Satoshi Yamasaki^1,³, Takahiro Fukui^1,⁴, Yuki Doi^1,⁴, Norio Tokuda⁵, Mutsuko Hatano^1,⁶, Norikazu Mizuochi^1,⁴ (1.JST-CREST, 2.AIST-NRI, 3.AIST-ETRI, 4.Osaka Univ., 5.Kanazawa Univ., 6.Tokyo Inst. Technol.)

5:00 PM - 5:15 PM

[11p-C1-14] Charge state control of NV center in diamond by phosphorus donor

〇Yuki Doi¹, Takahiro Fukui¹, Hiromitsu Kato^2,³, Toshiharu Makino^2,³, Satoshi Yamasaki^2,³, Toshiyuki Tashima¹, Hiroki Morishita¹, Shinji Miwa¹, Fedor Jelezko⁴, Yoshishige Suzuki¹, Norikazu Mizuochi^1,³ (1.Osaka Univ., 2.AIST, 3.CREST, 4.Ulm Univ.)

5:15 PM - 5:30 PM

[11p-C1-15] Fabrication of NV centers in diamond JFET for electric field sensing

〇Wataru Naruki¹, Kosuke Tahara¹, Takayuki Iwasaki^1,³, Hiromitsu Kato^2,³, Toshiharu Makino^2,³, Masahiko Ogura^2,³, Daisuke Takeuchi^2,³, Satoshi Yamasaki^2,³, Mutsuko Hatano^1,³ (1.Tokyo tech., 2.AIST, 3.CREST)

5:30 PM - 5:45 PM

[11p-C1-16] Collection Efficiency Improvement of NV center by Selective Growth of Diamond

〇Satoko Furuyama¹, Takayuki Iwasaki^1,², Maki Shimizu^1,², Junya Yaita¹, Tetsuo Kodera^1,², Mutsuko Hatano^1,² (1.Tokyo Tech., 2.CREST-JST)

5:45 PM - 6:00 PM

[11p-C1-17] Introdction of SiV center in CVD diamond film by ion implantation

〇yuta osoekawa¹, nakao motoi¹, tsubota toshiki¹, nagamachi shinji² (1.Kyushu institute of Technology, 2.Nagamachi Science Laboratory Co.,Ltd.)

Oral presentation

[12a-C1-1~10] 6.2 Carbon-based thin films

Thu. Mar 12, 2015 9:00 AM - 11:45 AM C1 (6C-104)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

△ [12a-C1-1] Formation and evaluation of SiO₂ gate dielectric films on diamond

〇(B)Takeshi Hara¹, Tomohiro Hakamata¹, Wako Ono¹, Yuji Seshimo¹, Yuya Hayashi¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (1.Waseda Univ.)

9:15 AM - 9:30 AM

△ [12a-C1-2] Over 1600V Breakdown Voltage C-H Diamond MOSFETs using High Temperature ALD-Al₂O₃Insulator

〇(B)Yuya KITABAYASHI¹, Tetsuya YAMADA¹, Dechen XU¹, Hidetoshi TSUBOI¹, Toshiki SAITO¹, Tatsuya SAITO¹, Daisuke MATSUMURA¹, Atsushi HIRAIWA¹, Hiroshi KAWARADA¹ (1.Waseda Univ.)

9:30 AM - 9:45 AM

△ [12a-C1-3] Comparison of high-temperature electric characteristics of ALD-Al₂O₃ MOS capacitors between different gate-electrode materials

〇Daisuke Matsumura¹, Tatsuya Saito¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (1.Waseda Univ.)

9:45 AM - 10:00 AM

△ [12a-C1-4] C-H diamond MOSFET with trench-channel

〇Toshiki Saito¹, Mikinori Kobayashi¹, Tetsuya Yamada¹, Dechen Xu¹, Yuya Kitabayashi¹, Daisuke Matsumura¹, Hidetoshi Tsuboi¹, Masafumi Inaba¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (1.Waseda Univ.)

10:00 AM - 10:15 AM

△ [12a-C1-5] Analysis of thin AlN on (001) diamond by X-ray in-plane diffraction

〇(B)Yuya Hayashi¹, Ono Wako¹, Hakamata tomohiro¹, Hiraiwa Atsushi¹, Kawarada Hiroshi¹ (1.Waseda Univ.)

Break （10:15 AM - 10:30 AM）

10:30 AM - 10:45 AM

△ [12a-C1-6] Fabrication of Lateral p-n Junction at {1-10} Orientation on a (111) Substrate

〇Kazuki Sato¹, Takayuki Iwasaki^1,^2,³, Maki Shimizu^1,³, Hiromitsu Kato^3,⁴, Toshiharu Makino^3,⁴, Masahiko Ogura^3,⁴, Daisuke Takeuchi^3,⁴, Satoshi Yamasaki^3,⁴, Mutsuoko Hatano^1,^2,³ (1.TITECH, 2.ALCA, 3.CREST, 4.AIST)

10:45 AM - 11:00 AM

△ [12a-C1-7] Evaluation of potential profile of by Kelvin probe force microscopy and correlation with inside structures about a diamond lateral p-n junction

〇Kazuya Shirota^1,², Daisuke Takeuchi², Toshiharu Makino², Hiromitsu Kato², Masahiko Ogura², Satoshi Yamasaki^1,² (1.Tsukuba Univ., 2.AIST)

11:00 AM - 11:15 AM

[12a-C1-8] Normally-off Operation of Diamond JFET

〇Taisuke Suwa¹, Takayuki Iwasaki^1,^2,³, Kazuki Sato¹, Hiromitsu Kato^3,⁴, Toshiharu Makino^3,⁴, Masahiko Ogura^3,⁴, Daisuke Takeuchi^3,⁴, Satoshi Yamasaki^3,⁴, Mutsuko Hatano^1,^2,³ (1.Titech, 2.ALCA, 3.CREST, 4.AIST)

11:15 AM - 11:30 AM

[12a-C1-9] Electrical properties of diamond p⁺-i-n⁺ junction using hopping p⁺ and n⁺ layers

〇Toshiharu Makino^1,², Daisuke Kuwabara^1,^2,³, Hiromitsu Kato^1,², Daisuke Takeuchi^1,², Masahiko Ogura^1,², Hideyo Okushi^1,², Satoshi Yamasaki^1,^2,³ (1.ETRI, AIST, 2.CREST/JST, 3.Univ. of Tsukuba)

11:30 AM - 11:45 AM

△ [12a-C1-10] Temperature dependence of exciton emission in diamond light emitting diodes

〇(D)Daisuke Kuwabara^1,^2,³, Toshiharu Makino^2,³, Hiromitsu Kato^2,³, Daisuke Takeuchi^2,³, Masahiko Ogura^2,³, Hideyo Okushi^2,³, Satoshi Yamasaki^2,³ (1.Tsukuba Univ., 2.AIST, 3.CREST/JST)

Oral presentation

[12p-C1-1~18] 6.2 Carbon-based thin films

Thu. Mar 12, 2015 1:15 PM - 7:00 PM C1 (6C-104)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[12p-C1-1] Formative Elements of Diamondlike Carbon Films Deduced from their Raman Analysis

〇Susumu Takabayashi¹, Meng Yang³, Yuji Takakuwa³, Takayuki Takahagi² (1.RIEC, Tohoku Univ., 2.AdSM, Hiroshima Univ., 3.IMRAM, Tohoku Univ.)

1:30 PM - 1:45 PM

[12p-C1-2] Spectroscopic Analysis of Enhancement of Thermal Stability of Diamondlike Carbon Films

〇Susumu Takabayashi¹, Takayuki Takahagi² (1.RIEC, Tohoku Univ., 2.AdSM, Hiroshima Univ.)

1:45 PM - 2:00 PM

[12p-C1-3] Structures and optical constants of amorphous carbon film deposited by radio-frequency magnetron sputtering

〇Satoru Arakawa¹, Yasuyuki Nakaya¹, X.L. Zhou¹, Sarayut Tunmee¹, Keiji Komatsu¹, Shigeo Ohshio¹, Hidetoshi Saitoh¹ (1.Nagaoka Univ. Tech.)

2:00 PM - 2:15 PM

▲ [12p-C1-4] The chemical information evaluation of hydrogenated amorphous carbon films by XPS and NEXAFS at different thicknesses

〇(D)Sarayut Tunmee¹, Ratchadaporn Supruangnet², Hideki Nakajima², Xiaolong Zhou¹, Yasuyuki Nakaya¹, Satoru Arakawa¹, Keiji Komatsu¹, Shigeo Ohshio¹, Kazuhiro Kanda³, Hidetoshi Saitoh¹ (1.Nagaoka Univ. Tech., 2.SLRI, 3.LASTI, Univ. of Hyogo)

2:15 PM - 2:30 PM

[12p-C1-5] Technology of low temperature thermal CVD for amorphous carbon film

〇Masayuki Kitamura¹, satoshi Mizunaga¹, Akira Shimizu¹, Akinobu Kakimoto¹, Yoshinobu Hayakawa², Yasuhiro Hamada³ (1.Tokyo Electron Tohoku, 2.Tokyo Electron Miyagi, 3.Tokyo Electron)

2:30 PM - 2:45 PM

△ [12p-C1-6] Characteristics of DLC Films Prepared by Filtered-Arc-Deposition with DC Substrate Bias

〇Yuma Fujii¹, Takahiro Imai¹, Yu Miyamoto¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Hideto Tanoue², Masao Kamiya³, Makoto Taki⁴, Yushi Hasegawa⁴, Nobuhiro Tsuji⁴, Satoru Kaneko⁵, Haruyuki Yasui⁶, Shinsuke Kunitsugu⁷, Masahiro Kawaguchi⁸, Kenichi Miura⁹ (1.Toyohashi Univ. of Technol., 2.Kitakyushu National College of Technol., 3.Itoh Opt. Ind. Co., Ltd., 4.Onward Ceramic Coating Co., Ltd., 5.Kanagawa Industrial Technology Center, 6.Industrial Research Institute of Ishikawa, 7.Industrial Technology Center of Okayama Prefecture, 8.Tokyo Metropolitan Industrial Technology Research Institute, 9.Technology Research Institute of Osaka Prefecture)

Break （2:45 PM - 3:00 PM）

3:00 PM - 3:15 PM

▲ [12p-C1-7] Formation of popcorn-like nanostructure in C₆₀-incorporated DLC by exposing to H₂O vapor

〇(DC)Wei Xie¹, Aiko Kawahito¹, Takashi Yanase¹, Taro Nagahama², Toshihiro Shimada² (1.Graduate School of Chemical Sciences and Engineering, Hokkaido University, 2.Hokkaido University)

3:15 PM - 3:30 PM

[12p-C1-8] Generation and evaluation graphene on SiO₂ modulation substrate

〇Tomoki Imamura¹, Takao Izaki¹, Hiroki Nishiguchi¹, Kyota Matsuo¹, Seiya Matsukawa¹, Masao Yoshioka², Hiroshi Kubota^1,² (1.Kumamoto Univ. Graduate School, 2.Kumamoto Univ.)

3:30 PM - 3:45 PM

△ [12p-C1-9] Formation of pentacene-based organic film by hot mesh deposition

〇(M1)shun hirano¹, Akira Heya¹, Naoto Matsuo¹ (1.Univ. of Hyogo)

3:45 PM - 4:00 PM

[12p-C1-10] Thickness Effect on Evaluation of Adhesion of DLC Film by SRV Tribometer

〇Tsuguyori Ohana¹, Hiroki Mano¹, Takako Nakamura¹ (1.AIST)

4:00 PM - 4:15 PM

[12p-C1-11] Surface modification of DLC film by oxygen plasma treatment

〇(B)Yuta Kawachi¹, Yasuharu Ohgoe¹, Akihiko Homma¹, Kenji Hirakuri¹, Tatsuhiko Arafune¹, Hiroo Noguchi¹ (1.Tokyo Denki Univ.)

4:15 PM - 4:30 PM

△ [12p-C1-12] The volume change of Si-containing hydrogenated DLC films by the soft X-ray irradiation

〇Shotaro Tanaka¹, Ryo Imai¹, Makoto Okada¹, Shinji Matsui¹, Kazuhiro Kanda¹ (1.LASTI, Univ. of Hyogo)

Break （4:30 PM - 4:45 PM）

4:45 PM - 5:45 PM

[12p-C1-13] [INVITED] Trends and Future Outlook of DLC Films Technology

〇Naoto Ohtake¹ (1.Tokyo Tech)

5:45 PM - 6:00 PM

[12p-C1-14] Source of N atoms of a-CN_x:H films formed from the microwave discharge flow of the gas mixture of N₂ and CH₃CN

〇(M1)Nobuyoshi Mogi¹, Hiroki Tsudome¹, Haruhiko Ito¹ (1.Nagaoka Univ. of Tech)

6:00 PM - 6:15 PM

△ [12p-C1-15] Influence of Columnar Structures on the Gas Sensitivity of Amorphous Carbon Nitride Thin Films

〇Naoyuki Tamura¹, Masami Aono¹, Nobuaki Kitazawa¹, Yoshihisa Watanabe¹ (1.NDA)

6:15 PM - 6:30 PM

[12p-C1-16] a-CNx:H/Al Films Deposition for Field Emission Using Supermagnetron Plasma

〇Haruhisa Kinoshita¹, Sho Suzuki¹, Ryouhei Taguchi¹, Hiroki Takeuchi¹ (1.Shizuoka Univ., Grad. Sch. Eng.)

6:30 PM - 6:45 PM

△ [12p-C1-17] Synthesis of Graphitic Carbon Nitride Films Using Guanidine Carbonate and the Fundamental Evaluation

〇Shiori Fujita¹, Hitoe Habuchi¹, Shunsaku Takagi¹, Hirofumi Takikawa² (1.Gifu Natl. Coll. Technol., 2.Toyohashi Univ. Technol.)

6:45 PM - 7:00 PM

▲ [12p-C1-18] Large area synthesis of hexagonal boron nitride (hBN) with controlled thickness and crystal shape

〇(D)Subash Sharma¹, Golap Kalita¹, Masaki Tanemura¹ (1.Nagoya Inst of Tech)

Sessions

6 Thin Films and Surfaces » 6.2 Carbon-based thin films

[11a-P4-1~18] 6.2 Carbon-based thin films

▼ [11a-P4-8] Role of the oxygen interlayer on electrical properties of WC/p-diamond Schottky diodes

△ [11a-P4-12] Analysis on interface of DLC film fabricated by RF plasma CVD using X-ray reflectometry

△ [11a-P4-14] Development of the simulation program, working on Excel, of C-K edge NEXAFS spectra of DLC film for estimation of sp2/(sp2+sp3) ratio

△ [11a-P4-18] Effects of Long-term Irradiation on Photo-induced Volume Changes of a-CNx Films

[11p-C1-1~17] 6.2 Carbon-based thin films

△ [11p-C1-3] Evaluation of superconducting boron-doped diamond thin film critical thickness using X-ray diffraction

▼ [11p-C1-6] Direct observation and mechanism for enhanced electron emission sites in Pt ion implanted/post-annealed ultra nanocrystalline diamond films

△ [11p-C1-7] Heteroepitaxial growth of diamond on Ir by grid-patterned nucleation region

△ [11p-C1-10] ATP detection via aptamer by diamond surface control

[12a-C1-1~10] 6.2 Carbon-based thin films

△ [12a-C1-1] Formation and evaluation of SiO2 gate dielectric films on diamond

△ [12a-C1-2] Over 1600V Breakdown Voltage C-H Diamond MOSFETs using High Temperature ALD-Al2O3 Insulator

△ [12a-C1-3] Comparison of high-temperature electric characteristics of ALD-Al2O3 MOS capacitors between different gate-electrode materials

△ [12a-C1-4] C-H diamond MOSFET with trench-channel

△ [12a-C1-5] Analysis of thin AlN on (001) diamond by X-ray in-plane diffraction

△ [12a-C1-6] Fabrication of Lateral p-n Junction at {1-10} Orientation on a (111) Substrate

△ [12a-C1-7] Evaluation of potential profile of by Kelvin probe force microscopy and correlation with inside structures about a diamond lateral p-n junction

△ [12a-C1-10] Temperature dependence of exciton emission in diamond light emitting diodes

[12p-C1-1~18] 6.2 Carbon-based thin films

▲ [12p-C1-4] The chemical information evaluation of hydrogenated amorphous carbon films by XPS and NEXAFS at different thicknesses

△ [12p-C1-6] Characteristics of DLC Films Prepared by Filtered-Arc-Deposition with DC Substrate Bias

▲ [12p-C1-7] Formation of popcorn-like nanostructure in C60-incorporated DLC by exposing to H2O vapor

△ [12p-C1-9] Formation of pentacene-based organic film by hot mesh deposition

△ [12p-C1-12] The volume change of Si-containing hydrogenated DLC films by the soft X-ray irradiation

△ [12p-C1-15] Influence of Columnar Structures on the Gas Sensitivity of Amorphous Carbon Nitride Thin Films

△ [12p-C1-17] Synthesis of Graphitic Carbon Nitride Films Using Guanidine Carbonate and the Fundamental Evaluation

▲ [12p-C1-18] Large area synthesis of hexagonal boron nitride (hBN) with controlled thickness and crystal shape

Authentication

△ [11a-P4-14] Development of the simulation program, working on Excel, of C-K edge NEXAFS spectra of DLC film for estimation of sp²/(sp²+sp³) ratio

△ [11a-P4-18] Effects of Long-term Irradiation on Photo-induced Volume Changes of a-CN_x Films

△ [12a-C1-1] Formation and evaluation of SiO₂ gate dielectric films on diamond

△ [12a-C1-2] Over 1600V Breakdown Voltage C-H Diamond MOSFETs using High Temperature ALD-Al₂O₃Insulator

△ [12a-C1-3] Comparison of high-temperature electric characteristics of ALD-Al₂O₃ MOS capacitors between different gate-electrode materials

▲ [12p-C1-7] Formation of popcorn-like nanostructure in C₆₀-incorporated DLC by exposing to H₂O vapor