Oral presentation

15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[15p-A23-1~20] 15.8 Crystal evaluation, impurities and crystal defects

Thu. Sep 15, 2016 1:15 PM - 6:45 PM A23 (201B)

Takahiro Maeta(Global Wafers Japan), Takuto Kojima(Meiji Univ.), Yutaka Ohno(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[15p-A23-1] Segregation ability of impurity atoms at large-angle grain boundaries in Si

〇Yutaka Ohno¹, Kaihei Inoue¹, Kozo Fujiwara¹, Kentaro 2utsukake¹, Momoko Deura¹, Ichiro Yonenaga¹, Yasuo Shimizu², Koji Inoue², Naoki Ebisawa², Yasuyoshi Nagai², Hideto Yoshida³, Seiji Takeda³, Shingo Tanaka⁴, Masanori Kohyama⁴ (1.IMR, Tohoku Univ., 2.The Oarai Center, IMR, Tohoku Univ., 3.ISIR, Osaka Univ., 4.AIST)

1:30 PM - 1:45 PM

[15p-A23-2] Impurity segregation at grain boundaries in mono-like Si crystals

〇Yutaka Ohno¹, Kentaro Kutsukake¹, Momoko Deura¹, Ichiro Yonenaga¹, Yasuo Shimizu², Koji Inoue², Naoki Ebisawa², Yasuyoshi Nagai², Hideto Yoshida³, Seiji Takeda³ (1.IMR, Tohoku Univ., 2.The Oarai Center, IMR, Tohoku Univ., 3.ISIR, Osaka Univ.)

1:45 PM - 2:00 PM

[15p-A23-3] Evaluation of depletion layer in power device (1) Evaluation by multi scanning prove microscope

〇Hidekazu Yamamoto¹, Takeshi Uruma¹, Nobuo Satoh¹, Kyohei Komori¹, Akinori Oda¹ (1.Chiba Inst. of Tech.)

2:00 PM - 2:15 PM

[15p-A23-4] Evaluation of depletion layer in power device (2) Comparison with numerical calculation

〇Hidekazu Yamamoto¹, Kyohei Komori¹, Akinori Oda¹, Takeshi Uruma¹, Nobuo Satoh¹ (1.Chiba Inst. of Tech.)

2:15 PM - 2:30 PM

[15p-A23-5] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers(1)
-The influence of oxygen concentration in implanted region on gettering of metallic impurities-

〇Ayumi Masada¹, Toshiro Nakai¹, Ryo Hirose¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

2:30 PM - 2:45 PM

[15p-A23-6] Characteristic of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers (2)
-Trapping Ability of Oxygen by Bonded Region between Epitaxial Layer and Silicon Substrate at Room Temperature (2)-

〇Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

2:45 PM - 3:00 PM

△ [15p-A23-7] Characteristics of Carbon Cluster Ion Implanted Epitaxial Silicon Wafers(3) - Development study of multi-element molecular ion implantation technique (2) -

〇Ryo Hirose¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹, Naoki Miyamoto² (1.SUMCO CORPORATION, 2.NISSIN ION EQUIPMENT CO,.LTD.)

3:15 PM - 3:30 PM

[15p-A23-8] Bulk lifetime of free carriers evaluated by parallel dual laser-beam technique: Detection of lifetime degradation due to oxygen precipitation

〇Hiroshi Kaneta¹, Ichiro Omura¹ (1.Kyushu Inst. Tech.)

3:30 PM - 3:45 PM

[15p-A23-9] Bulk lifetime of free carriers evaluated by parallel dual laser-beam technique: Detection of lifetime degradation due to intentional Fe contamination

〇Hiroshi Kaneta¹, Ichiro Omura¹ (1.Kyushu Inst. Tech.)

3:45 PM - 4:00 PM

[15p-A23-10] Measurement of oxygen concentration in FZ silicon crystal

〇Naohisa Inoue^6,1, Masumi Obuchi², Hiroyuki Uno³, Keiko Inoue⁴, Kaori Watanabe⁵, Yuichi Kawamura⁶ (1.Tokyo Univ. Agri. & Technol., 2.Nano Science Corp., 3.SHI Exam. & Insp., 4.Toray Research C. Inc., 5.Systems Eng. Inc., 6.Osaka Pref. Univ.)

4:00 PM - 4:15 PM

[15p-A23-11] Measurement of carbon concentration in silicon crystal (Ⅸ) from1E+16 to 1E+13

〇Naohisa Inoue^1,6, Keiko Inoue², Hisayoshi Ito³, Masumi Obuchi⁴, Kaori Watanabe⁵, Yuichi Kawamura⁶ (1.Tokyo Univ. Agri. & Technol., 2.Toray Research C. Inc., 3.JAEA, 4.Nano Science Corp., 5.Systems Eng. Inc., 6.Osaka Pref. Univ.)

4:15 PM - 4:30 PM

[15p-A23-12] Sensitivity and detection limit of carbon concentration measurement in silicon crystal

〇Naohisa Inoue^2,1 (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

4:30 PM - 4:45 PM

[15p-A23-13] Measurement of Low Carbon Concentration in Silicon Substrate Using Deep Level Transient Spectroscopy Method.

〇Kazutaka Eriguchi¹, Noritomo Mitsugi¹, Shuichi Samata¹ (1.SUMCO)

4:45 PM - 5:00 PM

[15p-A23-14] Characterization of Iron in Silicon by Low Temperature PL and DLTS Measurements

〇Minoru Nakamura¹, Susumu Murakami¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

5:15 PM - 5:30 PM

△ [15p-A23-15] Determination of Low Carbon Concentration in CZ-Si for Solar Cells by Luminescence Activation Using Electron Irradiation

〇Hirotatsu Kiuchi¹, Michio Tajima¹, Fumito Higuchi¹, Atsushi Ogura¹, Nobuhito Iida², Shoji Tachibana², Isao Shoda², Eiichi Nishijima² (1.Meiji Univ., 2.Tokuyama Corporation)

5:30 PM - 5:45 PM

△ [15p-A23-16] Analysis of Oxygen Precipitation Process in CZ-Si by Luminescence Activation Using Electron Irradiation

〇fumito higuchi¹, michio tajima¹, hirotatsu kiuchi¹, atsushi ogura¹ (1.Meiji Univ.)

5:45 PM - 6:00 PM

[15p-A23-17] Analysis of Oxygen Precipitation by Highly Parallel X-ray Diffuse Scattering

〇Tomoyuki Horikawa¹, Takeshi Senda¹, Junji Matsui², Yoshiyuki Tsusaka² (1.GlobalWafers Japan Co., Ltd., 2.University of Hyogo)

6:00 PM - 6:15 PM

[15p-A23-18] Synchrotron Radiation X-ray Topography by Simultaneous Diffractions from Equivalent Lattice Planes in Si for Determination of Dislocation Burgers Vectors

〇Yoshiyuki Tsusaka¹, Tetsuya Tsurumaru¹, Junji Matsui² (1.Univ. of Hyogo , Graduate School of Materials Sci., 2.Univ. of Hyogo, Syn. Rad. Nano-Tech. Center)

6:15 PM - 6:30 PM

[15p-A23-19] Characterization of GaN crystals with the X-ray topography (1)

〇Satoko Miyakawa¹, Yuko Kitano¹, Emiko Inoue¹, Koichi Akimoto¹ (1.Japan Women's Univ.)

6:30 PM - 6:45 PM

△ [15p-A23-20] Characterization of GaN crystals with the X-ray topography (2)

〇(M1C)Yuko Kitano¹, Satoko Miyakawa¹, Emiko Inoue¹, Koichi Akimoto¹ (1.Japan Women's Univ.)

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