Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[16a-B10-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Fri. Sep 16, 2016 9:00 AM - 12:15 PM B10 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[16a-B10-1] Formation of shallow junctions with high activation in n+/p and p+/n Ge using ion implantation and FLA

〇Hideaki Tanimura¹, Hikaru Kawarazaki¹, Shinichi Kato¹, Takayuki Aoyama¹, Ippei Kobayashi¹, Hiroshi Onoda², Yoshiki Nakashima², Tsutomu Nagayama², Nariaki Hamamoto², Shigeki Sakai² (1.SCREEN Semiconductor Solutions Co., Ltd., 2.Nissin Ion Equipment Co., Ltd.)

9:15 AM - 9:30 AM

[16a-B10-2] Shallow and high activated junctions in n+/p Ge using FLA and O knocked on effect

〇Hikaru Kawarazaki¹, Hideaki Tanimura¹, Shinichi Kato¹, Takayuki Aoyama¹, Ippei Kobayashi¹, Hiroshi Onoda², Yoshiki Nakashima², Tsutomu Nagayama², Nariaki Hamamoto², Shigeki Sakai² (1.SCREEN Semiconductor Solutions, 2.NISSIN ION EQUIPMENT)

9:30 AM - 9:45 AM

[16a-B10-3] Photoelectron holography of As doped in Si

〇Kotaro Natori¹, Kazuo Tsutsui¹, Tomohiro Matsushita², Takayuki Muro², Toyohiko Kinoshita², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Fumihiko Matsui³, Masaru Shimomura⁴ (1.Tokyo Tech., 2.JASRI, 3.Nara Inst of Sci. and Technol., 4.Shizuoka Univ.)

9:45 AM - 10:00 AM

△ [16a-B10-4] Fabrication of Low Resistivity Metal/Ge Contact with Amorphous Zr-Ge-N Interlayer

〇Hayato Okamoto¹, Keisuke Yamamoto², Dong Wang¹, Hiroshi Nakashima² (1.IGSES, Kyushu Univ., 2.KASTEC, Kyushu Univ.)

10:00 AM - 10:15 AM

[16a-B10-5] Low contact resistance in metal/n-Ge junctions by inserting W-germanide films synthesized by thermal chemical vapor deposition

〇Naoya Okada^1,2, Noriyuki Uchida², Toshihiko Kanayama² (1.JST-PRESTO, 2.AIST)

10:15 AM - 10:30 AM

[16a-B10-6] Reduction of Schottky barrier height of metal/n-Ge contact by insertion of Si_xGe_1−x−ySn_y layer

〇Akihiro Suzuki^1,2, Shota Toda¹, Osamu Nakatsuka¹, Mitsuo Sakashita¹, Shigeaki Zaima^1,3 (1.Grad. Sch. of Eng., Nagoya Univ.,, 2.The Research Fellow of JSPS, 3.IMaSS, Nagoya. Univ.)

10:30 AM - 10:45 AM

[16a-B10-7] Printing deposition of thin group IV films using ballistic hot electron emitter

〇Ryutaro Suda¹, Mamiko Yagi¹, Akira Kojima¹, Jun-ichi Shirakashi¹, Nobuyoshi Koshida¹ (1.Tokyo Univ. of Agri. & Technol.)

10:45 AM - 11:00 AM

[16a-B10-8] Influence of Rapid Thermal Annealing on Structures of Ge Thin Films Grown at Low Temperature

〇Shintaro Otsuka¹, Mori Takahiro¹, Morita Yukinori¹, Uchida Noriyuki¹, Liu Yongxun¹, O'uchi Shin-ichi¹, Fuketa Hiroshi¹, Migita Shinji¹, Masahara Meisyoku¹, Matsukawa Takashi¹ (1.AIST)

11:00 AM - 11:15 AM

[16a-B10-9] Carrier transport properties and thermal conductance of polycrystalline GeSn

〇Noriyuki Uchida¹, Yoshinobu Miyazaki¹, Tatsuro Maeda¹, Kouichi Fukuda¹, Junichi Hattori¹, YUji Ohishi², Manabu Ishimaru⁴, Ruben R. Lieten³, Jean-Pierre Locquet³ (1.NERI-AIST, 2.Osaka univ., 3.KU Leuven, 4.Kyutech)

11:15 AM - 11:30 AM

[16a-B10-10] Investigation of Etching Mechanism of Germanium by Chlorine Neutral Beam

〇Shuichi Noda¹, En-Tzu Lee¹, Wataru Mizubayashi², Kazuhiko Endo², Seiji Samukawa^1,2 (1.Tohoku Univ., 2.AIST)

11:30 AM - 11:45 AM

[16a-B10-11] Cleanroom-Free Environment Control System for Minimal PLAD

〇Takashi Yajima^1,2, Masaharu Yasui^1,2, Sommawan Khumpuang^1,2, Hitoshi Maekawa^1,2, Shiro Hara^1,2 (1.AIST, 2.Minimal Fab)

11:45 AM - 12:00 PM

[16a-B10-12] Characterization of Environment for Minimal Fab

〇Takashi Yajima^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.Minimal Fab)

12:00 PM - 12:15 PM

[16a-B10-13] Investigation of productivity in device process of minimal fab

〇Sommawan Khumpuang^1,2, Fumito Imura^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL)

Session information