Oral presentation

13 Semiconductors » 13.3 Insulator technology

[5p-C11-1~10] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

Tue. Sep 5, 2017 1:45 PM - 4:30 PM C11 (Office 1)

Masao Inoue(Renesas), Takanobu Watanabe(Waseda Univ.)

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1:45 PM - 2:00 PM

△ [5p-C11-1] Improved bias stability atomic-layer-deposition Al₂O₃ films by crystallizing high-temperature annealing

〇(B)Kiyotaka Horikawa¹, Satoshi Okubo¹, Taisuke Kageura¹, Atsushi Hiraiwa^2,3,4, Hiroshi Kawarada^1,2,3 (1.Waseda Univ., 2.Zairean, 3.NTRC, 4.Nagoya Univ.)

2:00 PM - 2:15 PM

△ [5p-C11-2] Control of formation and suppression of dipole layer at Al₂O₃/SiO₂ interface
-Impacts of chemical composition abruptness at the interface-

〇Hironobu Kamata¹, Koji Kita¹ (1.The Univ. of Tokyo)

2:15 PM - 2:30 PM

▼ [5p-C11-3] Anomalous temperature dependence of dipole layer strength at the Al₂O₃/SiO₂ interface

〇(M1)Siri Nittayakasetwat¹, Hironobu Kamata¹, Koji Kita¹ (1.The Univ. of Tokyo)

2:30 PM - 2:45 PM

[5p-C11-4] Correlation between Electrical Dipole Moment and Ratio of Oxygen Density at High-k Dielectric/SiO₂ Interface as Evaluated by XPS

〇Nobuyuki Fujimura¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

3:00 PM - 3:15 PM

[5p-C11-5] Surface roughness increase induced by step etching of SiO₂ film on Si

〇(M1)Takumi Agatuma¹ (1.Univ. of Tsukuba)

3:15 PM - 3:30 PM

▼ [5p-C11-6] Low-temperature Oxidation Characteristics of Si using SrTi_xMg_1-xO_3-δ Catalyst

〇(D)HsiangFang Sun¹, Akihiro Ikeda¹, Tanemasa Asano¹ (1.Kyushu Univ.)

3:30 PM - 3:45 PM

[5p-C11-7] Defect Profiling of RTN Traps under High Electric Fields ~ Theoretical Extrapolation Based on Non-radiative Multiphonon Transition ~

〇Michiru Hogyoku¹, Takashi Izumida¹, Seiji Onoue¹ (1.Toshiba Memory Corp.)

3:45 PM - 4:00 PM

[5p-C11-8] Charge De-trapping in SiN characterized by KFM

〇Koudai Ozawa¹, Ryu Hasunuma¹ (1.Tsukuba Univ.)

4:00 PM - 4:15 PM

[5p-C11-9] Theoretical study on interface orientation dependence of Si thermal oxidation based on Si emission model

〇Takuya Nagura¹, Shingo Kawachi¹, Kenta Chokawa¹, Hiroki Shirakawa¹, Masaaki Araidai^1,2,6, Hiroyuki Kageshima^3,6, Tetsuo Endoh^4,5,6, Kenji Shiraishi^1,2,6 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Interdisciplinary Graduate School of Science and Engineering, Shimane Univ., 4.Graduate School of Engineering, Tohoku Univ., 5.CIES, Tohoku Univ., 6.JST-ACCEL)

4:15 PM - 4:30 PM

[5p-C11-10] Chemical Trends of Metal Species in Amorphous-SiO₂

〇Takeshi Miyajima¹, Hiroki Shirakawa¹, Masaaki Araidai^2,1, Kenji Shiraishi^2,1 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Session information

[5p-C11-1~10] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

△ [5p-C11-1] Improved bias stability atomic-layer-deposition Al₂O₃ films by crystallizing high-temperature annealing

△ [5p-C11-2] Control of formation and suppression of dipole layer at Al₂O₃/SiO₂ interface
-Impacts of chemical composition abruptness at the interface-

▼ [5p-C11-3] Anomalous temperature dependence of dipole layer strength at the Al₂O₃/SiO₂ interface

[5p-C11-4] Correlation between Electrical Dipole Moment and Ratio of Oxygen Density at High-k Dielectric/SiO₂ Interface as Evaluated by XPS

[5p-C11-5] Surface roughness increase induced by step etching of SiO₂ film on Si

▼ [5p-C11-6] Low-temperature Oxidation Characteristics of Si using SrTi_xMg_1-xO_3-δ Catalyst

[5p-C11-7] Defect Profiling of RTN Traps under High Electric Fields ~ Theoretical Extrapolation Based on Non-radiative Multiphonon Transition ~

[5p-C11-8] Charge De-trapping in SiN characterized by KFM

[5p-C11-9] Theoretical study on interface orientation dependence of Si thermal oxidation based on Si emission model

[5p-C11-10] Chemical Trends of Metal Species in Amorphous-SiO₂

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Session information

[5p-C11-1~10] 13.3 Insulator technology

6.1と13.3と13.5のコードシェアセッションあり

△ [5p-C11-1] Improved bias stability atomic-layer-deposition Al2O3 films by crystallizing high-temperature annealing

△ [5p-C11-2] Control of formation and suppression of dipole layer at Al2O3/SiO2 interface-Impacts of chemical composition abruptness at the interface-

▼ [5p-C11-3] Anomalous temperature dependence of dipole layer strength at the Al2O3/SiO2 interface

[5p-C11-4] Correlation between Electrical Dipole Moment and Ratio of Oxygen Density at High-k Dielectric/SiO2 Interface as Evaluated by XPS

[5p-C11-5] Surface roughness increase induced by step etching of SiO2 film on Si

▼ [5p-C11-6] Low-temperature Oxidation Characteristics of Si using SrTixMg1-xO3-δ Catalyst

[5p-C11-7] Defect Profiling of RTN Traps under High Electric Fields ~ Theoretical Extrapolation Based on Non-radiative Multiphonon Transition ~

[5p-C11-8] Charge De-trapping in SiN characterized by KFM

[5p-C11-9] Theoretical study on interface orientation dependence of Si thermal oxidation based on Si emission model

[5p-C11-10] Chemical Trends of Metal Species in Amorphous-SiO2

Authentication

△ [5p-C11-1] Improved bias stability atomic-layer-deposition Al₂O₃ films by crystallizing high-temperature annealing

△ [5p-C11-2] Control of formation and suppression of dipole layer at Al₂O₃/SiO₂ interface
-Impacts of chemical composition abruptness at the interface-

▼ [5p-C11-3] Anomalous temperature dependence of dipole layer strength at the Al₂O₃/SiO₂ interface

[5p-C11-4] Correlation between Electrical Dipole Moment and Ratio of Oxygen Density at High-k Dielectric/SiO₂ Interface as Evaluated by XPS

[5p-C11-5] Surface roughness increase induced by step etching of SiO₂ film on Si

▼ [5p-C11-6] Low-temperature Oxidation Characteristics of Si using SrTi_xMg_1-xO_3-δ Catalyst

[5p-C11-10] Chemical Trends of Metal Species in Amorphous-SiO₂