Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[15a-F204-1~12] 15.6 Group IV Compound Semiconductors (SiC)

Wed. Mar 15, 2017 9:00 AM - 12:15 PM F204 (F204)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [15a-F204-1] Influence of grwoth temperature on the crystal quality in solution growth of SiC using Cr solvent

〇Kouki Suzuki¹, Toshinori Taishi^1,2 (1.Shinshu Univ. (Eng.), 2.Shinshu Univ. Center for Energy and Environmental Science)

9:15 AM - 9:30 AM

[15a-F204-2] Crystalline quality of n-type 4H-SiC off-axis substrate by solution growth technique

〇Kazuhiko Kusunoki¹, Kazuaki Seki¹, Yutaka Kishida¹, Hiroshi Kaido¹, Koji Moriguchi¹, Hironori Daikoku², Motohisa Kado², Masayoshi Doi², Katsunori Danno², Akinori Seki², Takayuki Shirai², Hiroaki Saito², Takeshi Bessho² (1.NSSMC, 2.Toyota Motor)

9:30 AM - 9:45 AM

△ [15a-F204-3] In situ observation of stacking fault expansion in 4H-SiC by X-ray topography in back reflection geometry

〇Fumihiro Fujie¹, Shunta Harada¹, Kenta Murayama¹, Kenji Hanada¹, Penglei Chen¹, Tomohisa Kato², Miho Tagawa¹, Toru Ujihara^1,2 (1.Nagoya Univ., 2.AIST)

9:45 AM - 10:00 AM

[15a-F204-4] SiC solution growth under controlled with the shape of solution by X-ray transmission method

〇Takenobu Sakai¹, Motohisa Kado², Hironori Daikoku², Shunta Harada³, Toru Ujihara³ (1.Nagoya Univ. Inst. of Inno. for Fut. Soc., 2.TOYOTA Mot. Corpo., 3.Nagoya Univ. Inst. of Mate. and Syst. for Susta.)

10:00 AM - 10:15 AM

[15a-F204-5] Mechanism of Replicating Polytype of 4H-SiC by Solution Growth on Concave Surface

〇(D)Hironori Daikoku¹, Sakiko Kawanishi², Takeshi Yoshikawa¹ (1.The Univ. of Tokyo, 2.Tohoku Univ.)

10:15 AM - 10:30 AM

[15a-F204-6] Thermodynamics of Al and N in 4H-SiC for Doping Control during Solution Growth of SiC

〇Sakiko Kawanishi¹, Hiroyuki Shibata¹, Takeshi Yoshikawa² (1.Tohoku Univ., 2.Univ. Tokyo)

10:45 AM - 11:00 AM

[15a-F204-7] Anti-Corrosion of Pyrolytic Carbon Film for SiC Epitaxial Reactor Cleaning

Kohei Shioda¹, 〇Hitoshi Habuka¹, Hideki Ito², Shin-ichi Mitani², Yoshinao Takahashi³ (1.Yokohama Nat. Univ., 2.NuFlare Technology, 3.Kanto Denka Kogyo)

11:00 AM - 11:15 AM

[15a-F204-8] Rate-Determining Process in Micro-Trench-Filling Epitaxial Growth of 4H-SiC

〇Kazuhiro Mochizuki¹, Shiyang Ji¹, Ryoji Kosugi¹, Yoshiyuki Yonezawa¹, Hajime Okumura¹ (1.AIST)

11:15 AM - 11:30 AM

▲ [15a-F204-9] Investigation on the optimal growth region for 4H-SiC CVD trench filling

〇Shiyang Ji¹, Ryoji Kosugi¹, Kazutoshi Kojima¹, Kazuhiro Mochizuki¹, Shingo Saito¹, Yoko Matsukawa¹, Yoshiyuki Yonezawa¹, Sadafumi Yoshida¹, Hajime Okumura¹ (1.AIST)

11:30 AM - 11:45 AM

[15a-F204-10] Carrier lifetime in 4H-SiC epitaxial layer on C-face with low impurity concentration

〇Mitsuhiro Kushibe¹, Johji Nishio¹, Takashi Shinohe¹, Akira Miyasaka², Hirokuni Asamizu³, Hidenori Kitai², Shinsuke Harada², Kazutoshi Kojima² (1.TOSHIBA Corp., 2.AIST, 3.ROHM Co.,Ltd.)

11:45 AM - 12:00 PM

△ [15a-F204-11] Microscopic FCA measurement for depth-resolved carrier lifetime measurements in SiC

〇(M1)Shinichi Mae¹, Takeshi Tawara^2,3, Hidekazu Tsuchida⁴, Masashi Kato¹ (1.NITech, 2.AIST, 3.Fuji Electcic Co., Ltd., 4.CRIEPI)

12:00 PM - 12:15 PM

[15a-F204-12] Temperature dependence of photoluminescence decay time from 1SSF and PD in 4H-SiC

〇Shinya Katahira¹, Yoshihito Ichikawa¹, Shunta Harada², Tunenobu Kimoto³, Masashi Kato¹ (1.NITech, 2.Nagoya Univ., 3.Kyoto Univ.)

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