Session information

Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[16a-P5-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Mar 16, 2017 9:30 AM - 11:30 AM P5 (BP)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:30 AM - 11:30 AM

[16a-P5-1] Effects of Temperature Differences in Seeding on Crystal Quality in Solution Growth of SiC

〇Naomichi Tsuchimoto¹, Hodaka Kutsukake¹, Koki Suzuki¹, Masaru Takahashi¹, Koangyoung Hyun¹, Toshinori Taishi¹ (1.Shinshu Univ.)

9:30 AM - 11:30 AM

[16a-P5-2] Detection of damaged layers induced during CMP process and linkage analyses of the structure of the damaged layer by MPJ, SEM, AFM, and FIB-STEM

〇Toshiyuki Isshiki¹, Takahiro Sato², Masaki Hasegawa², Atsushi Miyaki², Masato Iyoki², Takehiro Yamaoka², Katsunori Onuki², Kobayashi Kenji² (1.Kyoto Inst. Tech., 2.Hitachi Hightech.)

9:30 AM - 11:30 AM

[16a-P5-3] Dislocation dynamics simulation for shapes of expansion of stacking faults under REDG

〇Hiroki Sakakima¹, Asuka Hatano¹, Satoshi Izumi¹, Akihiro Goryu², Kenji Hirohata² (1.Univ. of Tokyo, 2.Toshiba R&D Center)

9:30 AM - 11:30 AM

[16a-P5-4] Relationship between Current Density and Stacking Fault Expansion Origin in Forward Degradation of 4H-SiC PiN Diode

〇SHOHEI HAYASHI^1,2, TAMOTSU YAMASHITA^1,3, SENZAKI JUNJI¹, MIYAZATO MASAKI^1,4, RYO MINA^1,4, MASAAKI MIYAJIMA^1,4, YOSHIYUKI YONEZAWA¹, TOMOHISA KATO¹, KAZUTOSHI KOJIMA¹, HAJIME OKUMURA¹ (1.AIST, 2.Toray Research Center Inc., 3.SHOWA DENKO K.K., 4.Fuji Electric Co. Ltd.)

9:30 AM - 11:30 AM

[16a-P5-5] Ti-Si-C Ohmic contact formation by laser annealing on n⁺ 4H-SiC C face

〇Desilva Milantha¹, Teruhisa Kawasaki², Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Sumitomo Heavy Industries Ltd.)

9:30 AM - 11:30 AM

[16a-P5-6] Improvements of 4H-SiC MOS interface with barium

〇Kousuke Muraoka¹, Hiroshi Sezaki^1,2, Seiji Ishikawa^1,2, Tomonori Maeda^1,2, Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Phenitec Semiconductor)

9:30 AM - 11:30 AM

[16a-P5-7] Effects of surface etching with CF₄on 4H-SiC MOS Capacitors

〇(B)Kiichi Kobayakawa¹, Kousuke Muraoka¹, Hiroshi Sezaki^1,2, Seiji Ishikawa^2,1, Tomonori Maeda^2,1, Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. RNBS, 2.Phenitec)

9:30 AM - 11:30 AM

[16a-P5-8] Bias Dependence of Heavy-Ion-Induce Charge Collected from SiC MOSFET

〇Takahiro MAKINO¹, Shuhei TAKANO^1,2, Shinsuke HARADA³, Kazutoshi KOJIMA³, Yasuto HIJIKATA², Takeshi OHSHIMA¹ (1.QST, 2.Saitama Univ., 3.AIST)

9:30 AM - 11:30 AM

[16a-P5-9] Recovery of electrical properties of SiC MOSFETs due to gamma-ray irradiation under high temperature condition

〇Akinori Takeyama¹, Takuma Matsuda^1,2, Satoshi Mitomo^1,2, Koichi Murata^1,2, Takahiro Makino¹, Shinobu Onoda¹, Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto Hijikata², Takeshi Ohshima¹ (1.QST, 2.Saitama Univ., 3.Sanken Electric Co., Ltd.)

9:30 AM - 11:30 AM

[16a-P5-10] Non-uniform layer near thermal SiO₂/SiC interface and its impact on the leakage characteristics

〇Ryu Nagai¹, Ryu Hasunuma¹, Kikuo Yamabe¹ (1.Univ. of Tsukuba)

9:30 AM - 11:30 AM

[16a-P5-11] Difference between dry-oxide and nitrided SiC-MOS interfaces studied by electrically-detected-magnetic-resonance (EDMR) spectroscopy

〇Takahide Umeda¹, Geonwoo Kim¹, Hironori Yoshioka², Ryouji Kosugi², Shinsuke Harada² (1.Univ. of Tsukuba, 2.AIST)

9:30 AM - 11:30 AM

[16a-P5-12] An analysis of in-plane defect distribution of carbon-related defects in dry-oxide C-face 4H-SiC MOSFET

〇Yohei Kagoyama¹, Mitsuo Okamoto², Hironori Yoshioka², Shinsuke Harada², Takahiro Yamasaki³, Takahisa Ohno³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.NIMS)

9:30 AM - 11:30 AM

[16a-P5-13] Electron-spin-resonance observations on dry-oxide, nitrided, and POCl₃-annealed 4H-SiC/SiO₂ interfaces

〇(M2)Geonwoo Kim¹, Takafumi Okuda², Jun Suda², Tsunenobu Kimoto², Mitsuo Okamoto³, Shinsuke Harada³, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.Kyoto Univ., 3.AIST)

9:30 AM - 11:30 AM

[16a-P5-14] Modeling of Busbar Skin Effects in Turn-Off Conditions

〇Koichi Fukuda¹, Junichi Hattori¹, Yoshihiro Sato¹, Hiroshi Sato¹, Hiroshi Yamaguchi¹ (1.AIST)

9:30 AM - 11:30 AM

[16a-P5-15] Integrated Degradation Analysis for SiC Die Attachment Systems subjected to Thermal Cycle Test

〇Mari Yamshita¹, Tatsuhiro Suzuki¹, Sawa Araki¹, Tetsuya Mori¹, Takashi Ogihara², Hidekazu Tanaka², Hisashi Yakumaru³, Satoshi Tanimoto¹ (1.NISSAN ARC, Ltd, 2.Tektronix/Keithley Japan, 3.Hitachi Power Solutions)

Authentication

Password authentication.
Password is required to view the PDF. Please enter a password to authenticate.

The password has been sent to pre-registrants.
For onsite registrants, please refer to the official guidebook which will be distributed at the venue.
The password will be sent to all JSAP members in September 2017.

Please log in with your participant account.
» Participant Log In

▲