Oral presentation

[17p-304-1~15] CS.2 6.1/13.3/13.5 Code-sharing Session

Fri. Mar 17, 2017 1:00 PM - 5:00 PM 304 (304)

Masumi Saitoh(TOSHIBA), Hironori Fujisawa(Univ. of Hyogo)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

△ [17p-304-1] Growth of epitaxial Y₂O₃-doped HfO₂ thin films by Sputtering method and their characterization

〇(M1)Taisei Suzuki¹, Takanori Mimura², Takao Shimizu³, Hiroshi Uchida⁴, Hiroshi Funakubo^1,2,3 (1.Tokyo Tech. SMCT, 2.Tokyo Tech. IGS, 3.Tokyo Tech. MECS, 4.Sophia Univ. FST)

1:15 PM - 1:30 PM

△ [17p-304-2] Stability of ferroelectric phase in epitaxial HfO₂-based films: RE₂O₃-HfO₂ vs ZrO₂-HfO₂

〇Takanori Mimura¹, Kiriha Katayama¹, Takao Shimizu², Takanori Kiguchi³, Akihiro Akama³, Toyohiko Konno³, Osami Sakata⁴, Hiroshi Funakubo^1,2,5 (1.Tokyo Tech. IGS, 2.Tokyo Tech. MECS, 3.Tohoku Univ. IMR, 4.NIMS, 5.Tokyo Tech. DMSE)

1:30 PM - 1:45 PM

[17p-304-3] Ferroelectric Croconic Acid Thin Film Formation on Yb Interfacial Layer

〇Hongli Zhang¹, Yasutaka Maeda¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

1:45 PM - 2:00 PM

[17p-304-4] Structural analysis of HfO₂ epitaxial thin films on (001)Si substrate

〇Kenshi Takada¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Pref Univ.Eng.)

2:00 PM - 2:15 PM

[17p-304-5] Preparation of (Hf,Zr)O₂ thin films on ZnO nanowires

〇(B)Yohei Takeuchi¹, Nami Nakamura¹, Hironori Fujisawa¹, Seiji Nakashima¹, Masaru Shimizu¹ (1.Univ. of Hyogo)

2:15 PM - 2:30 PM

[17p-304-6] Fabrication of epitaxial Fe:HfO₂ thin films and their characterization

〇Takahisa Shiraishi¹, Sujin Choi¹, Takao Shimizu², Hiroshi Funakubo², Takanori Kiguchi¹, Toyohiko J. Konno¹ (1.Tohoku Univ., 2.Tokyo Tech.)

2:30 PM - 2:45 PM

△ [17p-304-7] Improvement of ferroelectricity of Hf_xZr_1-xO₂ film using ALD-ZrO₂ seed layer

〇(M1)Takashi Onaya^1,2, Toshihide Nabatame^2,3, Kazunori Kurishima^1,2, Naomi Sawamoto¹, Akihiko Ohi², Naoki Ikeda², Toyohiro Chikyow², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS WPI-MANA, 3.CREST, JST)

2:45 PM - 3:00 PM

[17p-304-8] Peculiar thickness dependence of coercive electric field in HfO₂-based ferroelectric films

〇Shinji Migita¹, Hiroyuki Ota¹, Hiroyuki Yamada¹, Akihito Sawa¹, Akira Toriumi² (1.AIST, 2.Univ. of Tokyo)

3:15 PM - 3:30 PM

▲ [17p-304-9] Dopant-independent maximum Pr of doped ferroelectric HfO₂

〇(D)Lun Xu¹, Shigehisa Shibayama¹, Tomonori Nishimura¹, Takeaki Yajima¹, Shinji Migita², Akira Toriumi¹ (1.The Univ. of Tokyo, 2.AIST)

3:30 PM - 3:45 PM

△ [17p-304-10] Importance of thermal history on ferroelectric phase formation in HfO₂ film

〇Shigehisa Shibayama¹, Lun Xu¹, Xuan Tian¹, Shinji Migita², Akira Toriumi¹ (1.The Univ. of Tokyo, 2.AIST)

3:45 PM - 4:00 PM

▼ [17p-304-11] Ferroelectric tunnel junctions with ultrathin Y₂O₃-doped HfO₂

〇(D)Xuan Tian¹, Shigehisa Shibayama¹, Lun Xu¹, Shinji Migita², Akira Toriumi¹ (1.Univ. of Tokyo, 2.AIST)

4:00 PM - 4:15 PM

[17p-304-12] Study on Short Channel Effects in Negative Capacitance FinFETs Based on
Technology Computer-Aided Design Simulation

〇Hiroyuki Ota¹, Tsutomu Ikegami¹, Junichi Hattori¹, Koichi Fukuda¹, Shinji Migita¹, Akira Toriumi² (1.AIST, 2.Univ. of Tokyo)

4:15 PM - 4:30 PM

[17p-304-13] Direct Observation of Negative Capacitance of HfZrO₂ Film for Negative Capacitance FET

〇Nozomu Ueyama¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS. Univ. of Tokyo)

4:30 PM - 4:45 PM

△ [17p-304-14] Experimental Investigations for the Dynamic Characteristics of Double-Gate Negative-Capacitance FET with Ferroelectric HfO2

〇(DC)Kyungmin Jang¹, Nozomu Ueyama¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

4:45 PM - 5:00 PM

[17p-304-15] Ion/Ioff Ratio Enhancement and Scalability of Gate-All-Around Nanowire Negative-Capacitance FET with Ferroelectric HfO2

〇(DC)Kyungmin Jang¹, Takuya Saraya¹, Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

Sessions

CS Code-sharing session » CS.2 6.1/13.3/13.5 Code-sharing Session

[17p-304-1~15] CS.2 6.1/13.3/13.5 Code-sharing Session

△ [17p-304-1] Growth of epitaxial Y₂O₃-doped HfO₂ thin films by Sputtering method and their characterization

△ [17p-304-2] Stability of ferroelectric phase in epitaxial HfO₂-based films: RE₂O₃-HfO₂ vs ZrO₂-HfO₂

[17p-304-3] Ferroelectric Croconic Acid Thin Film Formation on Yb Interfacial Layer

[17p-304-4] Structural analysis of HfO₂ epitaxial thin films on (001)Si substrate

[17p-304-5] Preparation of (Hf,Zr)O₂ thin films on ZnO nanowires

[17p-304-6] Fabrication of epitaxial Fe:HfO₂ thin films and their characterization

△ [17p-304-7] Improvement of ferroelectricity of Hf_xZr_1-xO₂ film using ALD-ZrO₂ seed layer

[17p-304-8] Peculiar thickness dependence of coercive electric field in HfO₂-based ferroelectric films

▲ [17p-304-9] Dopant-independent maximum Pr of doped ferroelectric HfO₂

△ [17p-304-10] Importance of thermal history on ferroelectric phase formation in HfO₂ film

▼ [17p-304-11] Ferroelectric tunnel junctions with ultrathin Y₂O₃-doped HfO₂

[17p-304-12] Study on Short Channel Effects in Negative Capacitance FinFETs Based on
Technology Computer-Aided Design Simulation

[17p-304-13] Direct Observation of Negative Capacitance of HfZrO₂ Film for Negative Capacitance FET

△ [17p-304-14] Experimental Investigations for the Dynamic Characteristics of Double-Gate Negative-Capacitance FET with Ferroelectric HfO2

[17p-304-15] Ion/Ioff Ratio Enhancement and Scalability of Gate-All-Around Nanowire Negative-Capacitance FET with Ferroelectric HfO2

Authentication

Sessions

CS Code-sharing session » CS.2 6.1/13.3/13.5 Code-sharing Session

[17p-304-1~15] CS.2 6.1/13.3/13.5 Code-sharing Session

△ [17p-304-1] Growth of epitaxial Y2O3-doped HfO2 thin films by Sputtering method and their characterization

△ [17p-304-2] Stability of ferroelectric phase in epitaxial HfO2-based films: RE2O3-HfO2 vs ZrO2-HfO2

△ [17p-304-7] Improvement of ferroelectricity of HfxZr1-xO2 film using ALD-ZrO2 seed layer

▲ [17p-304-9] Dopant-independent maximum Pr of doped ferroelectric HfO2

△ [17p-304-10] Importance of thermal history on ferroelectric phase formation in HfO2 film

▼ [17p-304-11] Ferroelectric tunnel junctions with ultrathin Y2O3-doped HfO2

△ [17p-304-14] Experimental Investigations for the Dynamic Characteristics of Double-Gate Negative-Capacitance FET with Ferroelectric HfO2

Authentication

△ [17p-304-1] Growth of epitaxial Y₂O₃-doped HfO₂ thin films by Sputtering method and their characterization

△ [17p-304-2] Stability of ferroelectric phase in epitaxial HfO₂-based films: RE₂O₃-HfO₂ vs ZrO₂-HfO₂

△ [17p-304-7] Improvement of ferroelectricity of Hf_xZr_1-xO₂ film using ALD-ZrO₂ seed layer

▲ [17p-304-9] Dopant-independent maximum Pr of doped ferroelectric HfO₂

△ [17p-304-10] Importance of thermal history on ferroelectric phase formation in HfO₂ film

▼ [17p-304-11] Ferroelectric tunnel junctions with ultrathin Y₂O₃-doped HfO₂