Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[20p-331-1~13] 13.7 Compound and power electron devices and process technology

Thu. Sep 20, 2018 1:45 PM - 5:15 PM 331 (International Conference Room)

Kenji Shiojima(Univ. of Fukui), Masashi Kato(NITech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:45 PM - 2:00 PM

△ [20p-331-1] Electric characteristics evaluation of pn diode with vertical deep etched mesa structure and avalanche capability

〇Hayata Fukushima¹, Shigeyoshi Usami¹, Yuto Ando¹, Atsushi Tanaka^2,5, Manato Deki², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, 3.ARC, 4.VBL, 5.NIMS)

2:00 PM - 2:15 PM

△ [20p-331-2] Growth condition dependency of reverse leakage current of pn diode on free-standing GaN substrate II

〇Shigeyoshi Usami¹, Hayata Fukushima¹, Yuto Ando¹, Atsushi Tanaka^2,3, Maki Kushimoto¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,4,5 (1.Nagoya Univ., 2.IMaSS, 3.NIMS, 4.ARC, 5.VBL)

2:15 PM - 2:30 PM

[20p-331-3] Characterization of a Shockley-Read-Hall lifetime in homoepitaxial p-GaN
based on the analysis of the recombination current in GaN p-n junction diodes

〇Takuya Maeda¹, Tetsuo Narita², Hiroyuki Ueda², Masakazu Kanechika², Tsutomu Uesugi², Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita¹, Jun Suda^1,3,4 (1.Kyoto Univ., 2.TOYOTA Central R&D Labs., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

2:30 PM - 2:45 PM

[20p-331-4] Temperature dependence of Avalanche multiplication in GaN p-n junction diodes
measured by using the light absorption due to Franz-Keldysh effect

2:45 PM - 3:00 PM

[20p-331-5] Effect of strained layer superlattice (SLS) on breakdown voltage of fully-vertical GaN p-n diodes on Si

〇(M1)Naoki Torii¹, Debaleen Biswas¹, Yamamoto Keiji¹, Egawa Takashi¹ (1.Nagoya Inst. of Tech.)

3:00 PM - 3:15 PM

[20p-331-6] Anisotropic wet etching of selectively grown GaN for applications to three dimensional channel transistors

〇Hayato Mukai¹, Takuya Hamada¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech., 2.AIST)

3:30 PM - 3:45 PM

[20p-331-7] The mechanism of GaN photoelectrochemical (PEC) etching

〇FUMIMASA HORIKIRI¹, Yoshinobu Narita¹, Takehiro Yoshida¹ (1.SCIOCS)

3:45 PM - 4:00 PM

[20p-331-8] Mesa-structure GaN p-n diodes fabricated by photoelectrochemical (PEC) etching

〇Hiroshi Ohta¹, Naomi Asai¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

4:00 PM - 4:15 PM

[20p-331-9] Excellent potential of photoelectrochemical (PEC) etching for the vertical GaN superjunction devices

〇FUMIMASA HORIKIRI¹, Hiroshi Ohta², Naomi Asai², Yoshinobu Narita¹, Takehiro Yoshida¹, Tomoyoshi Mishima² (1.SCIOCS, 2.Hosei Univ.)

4:15 PM - 4:30 PM

[20p-331-10] Annealing temperature dependence of alloy contact for N-polar GaN HEMT structure

〇Koushi Hotta¹, Yumiko Tomizuka¹, Kousuke Itagaki¹, Isao Makabe², Shigeki Yoshida², Yasuyuki Miyamoto¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries)

4:30 PM - 4:45 PM

[20p-331-11] Effects of surface treatment using TMAH on p-GaN/metal contact characteristics

〇Takashi Shimizu¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹, Kazuo Tsutsui¹ (1.Tokyo Tech)

4:45 PM - 5:00 PM

[20p-331-12] Size effects of dot-array planar patterns on the contact resistance reduction technique for AlGaN/GaN HEMTs by introducing uneven AlGaN layer

〇Shinnosuke Hisanaga¹, Watanabe Takumi¹, Hoshii Takuya¹, Kakushima Kuniyuki¹, Wakabayashi Hitoshi¹, Iwai You¹, Tutui Kazuo¹ (1.Tokyo Tech)

5:00 PM - 5:15 PM

[20p-331-13] GaN Surface Cleaning and In-situ formation of SiO₂/GaN structure using Remote Plasma

〇Noriyuki Taoka¹, Nguyen Xuan Truyen^1,2, Taishi Yamamoto^1,2, Akio Ohta², Hisashi Yamada¹, Tokio Takahashi¹, Mitsuhisa Ikeda², Katsunori Makihara², Seiichi Miyazaki^2,3,1, Mitsuaki Shimizu^1,3 (1.AIST-NU GaN-OIL, 2.Nagoya Univ., 3.IMaSS)

Session information