Oral presentation

[21a-221A-1~8] 9.3 Nanoelectronics

Fri. Sep 21, 2018 9:30 AM - 11:30 AM 221A (221-1)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 9:45 AM

△ [21a-221A-1] Quantum Computing System for Combinational Optimization Problems

〇Mitsuki Ito¹, Yosuke Hirata¹, Moe Shimada¹, Yusuke Kihara¹, Jun-ichi Shirakashi¹ (1.Tokyo University of Agriculture & Technology)

9:45 AM - 10:00 AM

[21a-221A-2] Motion Prediction by Binary Neural Networks Using Pyrolytic Graphite Strain Sensors

〇Yuki Kushitani¹, Takahiro Kanokoda¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

10:00 AM - 10:15 AM

△ [21a-221A-3] Pulse Generation Behavior of SWNT/ Polyoxometalate(POM) Random Network by Using Strong Reductive POM

〇(M2)Xinguang Yu¹ (1.Kyushu Institute of Technology)

10:15 AM - 10:30 AM

▼ [21a-221A-4] Memristive behavior of random aggregation device using Ag-Ag₂S core-shell nanoparticles

〇(D)Hadiyawarman Hadiyawarman¹, Yurina Amamoto¹, Masanori Eguchi², Hirofumi Tanaka¹ (1.Kyushu Inst. Tech., 2.Kure Nat. Col. Tech.)

10:30 AM - 10:45 AM

△ [21a-221A-5] Fabrication and Characterization of Double-Gate Fe-MgF₂
Single-Electron Transistor

〇Takayuki Gyakushi¹, Yuki Asai¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.IST. Hokkaido Univ)

10:45 AM - 11:00 AM

△ [21a-221A-6] Evaluation of Single-Electron Transistor Characteristics of Fe-MgF₂ Single-Layer Granular Thin Films

〇Yuki Asai¹, Takayuki Gyakushi¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

11:00 AM - 11:15 AM

▼ [21a-221A-7] THz Rectification through a Single Metal Nanoparticle

〇(PC)Shaoqing Du¹, Kenji Yoshida¹, Ya Zhang¹, Chiu-Chun Tang¹, Tomoki Nishimura², Alka Singh², Hiroshi Inokawa², Kazuhiko Hirakawa¹ (1.IIS & INQIE,UTokyo, 2.RIE,Shizuoka Univ.)

11:15 AM - 11:30 AM

[21a-221A-8] Application of spin qubits to Physically Unclonable Function

〇Tetsufumi Tanamoto¹, Yoshifumi Nishi¹, Keiji Ono² (1.Toshiba R&D Center, 2.Riken)

Oral presentation

[21p-221A-1~6] 9.3 Nanoelectronics

Fri. Sep 21, 2018 1:00 PM - 2:30 PM 221A (221-1)

Katsuhiko Nishiguchi(NTT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

[21p-221A-1] Fabrication Process of Single-Electron Device Using Percolation Connection of Gold Nanoparticles in Resist Groove

Kazuhiko Matsumoto¹, 〇Masataka Moriya¹, Makoto Moribayashi¹, Tomoki Yagai¹, Hiroshi Shimada¹, Fumihiko Hirose², Ayumi Hirano-Iwata³, Yoshinao Mizugaki¹ (1.Univ. of Electro-Comm., 2.Yamagata Univ., 3.Tohoku Univ.)

1:15 PM - 1:30 PM

▲ [21p-221A-2] Self-Terminated Ultra-Fine H-ELGP Pt-based Nanogap Electrodes

〇(D)Yoonyoung Choi¹, Ain Kwon¹, Yutaka Majima¹ (1.Tokyo Inst. of Tech.)

1:30 PM - 1:45 PM

▲ [21p-221A-3] Negative Differential Conductance on Au₂₅ Nanocluster Single-Electron Transistor

〇(D)JAEYEON KIM¹, Yoon Young Choi¹, Younsu Jung¹, Masanori Sakamoto², Toshiharu Teranishi², Yutaka Majima¹ (1.Tokyo Inst., 2.Kyoto Univ.)

1:45 PM - 2:00 PM

[21p-221A-4] Optimization of Experimental Parameters for Fabrication of Au Atomic Junctions Using Artificial Intelligence Implemented on FPGA

〇Takuya Sakurai¹, Yosuke Hirata¹, Yuma Iwata¹, Keita Takebayashi¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

2:00 PM - 2:15 PM

[21p-221A-5] Control for Quantized Conductance Using Optimized Parameters Obtained by Ising Computing

〇Yosuke Hirata¹, Takuya Sakurai¹, Shotaro Sakai¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

2:15 PM - 2:30 PM

[21p-221A-6] Spike-Timing-Dependent Plasticity Characteristics Mimicking in Single Inorganic Synapses of Au Nanogaps

〇Keita Sakai¹, Koji Minami¹, Soki Tani¹, Tomomi Sato¹, Mitsuki Ito¹, Mamiko Yagi², Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech., 2.NIT, Ichinoseki College)

Poster presentation

[20p-PB3-1~11] 9.3 Nanoelectronics

Thu. Sep 20, 2018 1:30 PM - 3:30 PM PB (Shirotori Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[20p-PB3-1] Dispersion energy of single-electron turnstiles

〇Mika Yasuda¹, Shigeru Imai¹ (1.Ritsumeikan Univ.)

1:30 PM - 3:30 PM

[20p-PB3-2] Low-Temperature Formation of Au Single-Electron Transistors Based on Electromigrated Coulomb Island

〇Soki Tani¹, Koji Minami¹, Keita Sakai¹, Moe Shimada¹, Mitsuki Ito¹, Mamiko Yagi², Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech., 2.NIT, Ichinoseki College)

1:30 PM - 3:30 PM

[20p-PB3-3] Electrical characterization of silicon nanocrystal film using gold nanogap electrodes

〇Tomoki Kawazu¹, Shinya Kano¹, Minoru Fujii¹ (1.Kobe Univ.)

1:30 PM - 3:30 PM

[20p-PB3-4] Fabrication of single domain Au nanogap electrode using electromigration method

Hiroya Suzuki¹, Hiroshi Suga¹, Toru Sumiya², Hisashi Shima², 〇Yasuhisa Naitoh² (1.CIT, 2.AIST)

1:30 PM - 3:30 PM

[20p-PB3-5] Electromigration of Series-Parallel-Connected Au Nanogap with Au Nanodot Array

〇Koji Minami¹, Soki Tani¹, Keita Sakai¹, Mitsuki Ito¹, Mamiko Yagi², Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech., 2.NIT, Ichinoseki College)

1:30 PM - 3:30 PM

[20p-PB3-6] Fabrication of Au Atomic Junctions Using Genetic Algorithm Implemented on FPGA

〇Keita Takebayashi¹, Takuya Sakurai¹, Yosuke Hirata¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

1:30 PM - 3:30 PM

[20p-PB3-7] Electrical Properties and Synaptic Learning of Multiple-Connected Nanogaps Using Electromigration

〇Tomomi Sato¹, Keita Sakai¹, Koji Minami¹, Soki Tani¹, Mitsuki Ito¹, Mamiko Yagi², Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech., 2.NIT, Ichinoseki College)

1:30 PM - 3:30 PM

[20p-PB3-8] Investigation of Spin Connections for 2D-Ising Computing System

〇Tsukasa Miki¹, Mitsuki Ito¹, Yuki Kushitani¹, Moe Shimada¹, Masayuki Shiomura¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

1:30 PM - 3:30 PM

[20p-PB3-9] Calculations for Solving Combinatorial Optimization Problems Using Ising Computing Architecture with Different Spin Decision Logic

〇Moe Shimada¹, Mitsuki Ito¹, Yuki Kushitani¹, Tsukasa Miki¹, Masayuki Shiomura¹, Jun-ichi Shirakashi¹ (1.Tokyo Univ. Agr. & Tech.)

1:30 PM - 3:30 PM

[20p-PB3-10] Design of bubble-inspired circuit mimicking behavior of bubble film

〇Nobuhiko Kurata¹, Takahide Oya¹ (1.Yokohama National Univ.)

1:30 PM - 3:30 PM

[20p-PB3-11] Design of neural network construction for pulse signal generating and propagating medium

〇(M2)Wanhui Zheng¹, Takahide Oya¹ (1.Yokohama Natl Univ.)

Sessions

9 Applied Materials Science » 9.3 Nanoelectronics

[21a-221A-1~8] 9.3 Nanoelectronics

△ [21a-221A-1] Quantum Computing System for Combinational Optimization Problems

[21a-221A-2] Motion Prediction by Binary Neural Networks Using Pyrolytic Graphite Strain Sensors

△ [21a-221A-3] Pulse Generation Behavior of SWNT/ Polyoxometalate(POM) Random Network by Using Strong Reductive POM

▼ [21a-221A-4] Memristive behavior of random aggregation device using Ag-Ag₂S core-shell nanoparticles

△ [21a-221A-5] Fabrication and Characterization of Double-Gate Fe-MgF₂
Single-Electron Transistor

△ [21a-221A-6] Evaluation of Single-Electron Transistor Characteristics of Fe-MgF₂ Single-Layer Granular Thin Films

▼ [21a-221A-7] THz Rectification through a Single Metal Nanoparticle

[21a-221A-8] Application of spin qubits to Physically Unclonable Function

[21p-221A-1~6] 9.3 Nanoelectronics

[21p-221A-1] Fabrication Process of Single-Electron Device Using Percolation Connection of Gold Nanoparticles in Resist Groove

▲ [21p-221A-2] Self-Terminated Ultra-Fine H-ELGP Pt-based Nanogap Electrodes

▲ [21p-221A-3] Negative Differential Conductance on Au₂₅ Nanocluster Single-Electron Transistor

[21p-221A-4] Optimization of Experimental Parameters for Fabrication of Au Atomic Junctions Using Artificial Intelligence Implemented on FPGA

[21p-221A-5] Control for Quantized Conductance Using Optimized Parameters Obtained by Ising Computing

[21p-221A-6] Spike-Timing-Dependent Plasticity Characteristics Mimicking in Single Inorganic Synapses of Au Nanogaps

[20p-PB3-1~11] 9.3 Nanoelectronics

[20p-PB3-1] Dispersion energy of single-electron turnstiles

[20p-PB3-2] Low-Temperature Formation of Au Single-Electron Transistors Based on Electromigrated Coulomb Island

[20p-PB3-3] Electrical characterization of silicon nanocrystal film using gold nanogap electrodes

[20p-PB3-4] Fabrication of single domain Au nanogap electrode using electromigration method

[20p-PB3-5] Electromigration of Series-Parallel-Connected Au Nanogap with Au Nanodot Array

[20p-PB3-6] Fabrication of Au Atomic Junctions Using Genetic Algorithm Implemented on FPGA

[20p-PB3-7] Electrical Properties and Synaptic Learning of Multiple-Connected Nanogaps Using Electromigration

[20p-PB3-8] Investigation of Spin Connections for 2D-Ising Computing System

[20p-PB3-9] Calculations for Solving Combinatorial Optimization Problems Using Ising Computing Architecture with Different Spin Decision Logic

[20p-PB3-10] Design of bubble-inspired circuit mimicking behavior of bubble film

[20p-PB3-11] Design of neural network construction for pulse signal generating and propagating medium

Authentication

Sessions

9 Applied Materials Science » 9.3 Nanoelectronics

[21a-221A-1~8] 9.3 Nanoelectronics

△ [21a-221A-1] Quantum Computing System for Combinational Optimization Problems

△ [21a-221A-3] Pulse Generation Behavior of SWNT/ Polyoxometalate(POM) Random Network by Using Strong Reductive POM

▼ [21a-221A-4] Memristive behavior of random aggregation device using Ag-Ag2S core-shell nanoparticles

△ [21a-221A-5] Fabrication and Characterization of Double-Gate Fe-MgF2Single-Electron Transistor

△ [21a-221A-6] Evaluation of Single-Electron Transistor Characteristics of Fe-MgF2 Single-Layer Granular Thin Films

▼ [21a-221A-7] THz Rectification through a Single Metal Nanoparticle

[21p-221A-1~6] 9.3 Nanoelectronics

▲ [21p-221A-2] Self-Terminated Ultra-Fine H-ELGP Pt-based Nanogap Electrodes

▲ [21p-221A-3] Negative Differential Conductance on Au25 Nanocluster Single-Electron Transistor

[20p-PB3-1~11] 9.3 Nanoelectronics

Authentication

▼ [21a-221A-4] Memristive behavior of random aggregation device using Ag-Ag₂S core-shell nanoparticles

△ [21a-221A-5] Fabrication and Characterization of Double-Gate Fe-MgF₂
Single-Electron Transistor

△ [21a-221A-6] Evaluation of Single-Electron Transistor Characteristics of Fe-MgF₂ Single-Layer Granular Thin Films

▲ [21p-221A-3] Negative Differential Conductance on Au₂₅ Nanocluster Single-Electron Transistor