Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18a-C309-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Wed. Sep 18, 2019 9:00 AM - 12:00 PM C309 (C309)

Keiichiro Urabe(Kyoto Univ.), Takayoshi Tsutsumi(名大)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[18a-C309-1] Development of neutral beam etching equipment for realizing mask-less defect-free fabrication

〇Yoshiyuki Nozawa¹, Liao Bryan¹, Ryosuke Fujii¹, Toshihiro Hayami¹, Daisuke Ohori², Shuichi Noda³, Mikio Kadoi⁴, Teruhisa Ishida⁵, Mami Tanaka⁵, Masahiro Sota⁵, Kazuhiko Endo³, Seiji Samukawa² (1.SPT Co., Ltd., 2.IFS, Tohoku Univ., 3.AIST, 4.LTJ Corp., 5.NAGASE & CO., LTD.)

9:15 AM - 9:30 AM

[18a-C309-2] Development of bio-template arrangement equipment for realizing mask-less defect-free fabrication

〇MIKIO KADOI¹, MASAHISA ISHIDA², MAMI TANAKA², MASAHIRO SOTA², DAISUKE OHORI³, SHUICHI NODA⁴, YOSHIYUKI NOZAWA⁵, BRIAN RIAO⁵, RYOSUKE FUJII⁵, TOSHIYASU HAYAMI⁵, KAZUHIKO ENDO⁴, SEIJI SAMUKAWA³ (1.LTJ Corp., 2.NAGASE & CO., LTD., 3.IFS, Tohoku Univ., 4.AIST, 5.SPT Co., Ltd.)

9:30 AM - 9:45 AM

[18a-C309-3] Cyclic Etching of Cobalt via Oxide and Organometallic Complex

〇Sumiko Fujisaki¹, Yoshihide Yamaguchi¹, Hiroyuki Kobayashi¹, Kazunori Shinoda¹, Masaki Yamada¹, Hirotaka Hamamura¹, Kohei Kawamura², Hiroto Otake², Masaeu Izawa² (1.Hitachi R&D, 2.Hitachi High-Tech)

9:45 AM - 10:00 AM

[18a-C309-4] Thermal etching reactions of acetylacetone with transition metals

〇Tomoko Ito¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

10:00 AM - 10:30 AM

[18a-C309-5] [INVITED] Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

〇Akiko Hirata¹, Masanaga Fukasawa¹, Kazunori Nagahata², Hu Li³, Kazuhiro Karahashi⁴, Satoshi Hamaguchi⁴, Tetsuya Tatsumi¹ (1.Sony Semiconductor Solutions Corporation, 2.Sony Semiconductor Manufacturing Corporation, 3.Tokyo Electron, 4.Osaka Univ.)

10:45 AM - 11:00 AM

△ [18a-C309-6] Potential structure analysis of a capillary plate in a dual frequency CCP

〇(D)Makato Moriyama¹, Akihiro Mitsuya¹, Naoya Nakahara¹, Haruka Suzuki¹, Hirotaka Toyoda¹ (1.Nagoya Univ.)

11:00 AM - 11:15 AM

△ [18a-C309-7] Surface modification of Y₂O₃ by F⁺ ion irradiation

〇(M1)Hojun Kang¹, Tomoko Ito¹, Junghwan Um², Hikaru Kokura², Taekyun Kang², Sungil Cho², Hyunjung Park², Michiro Isobe¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Center for Atomic and Molecular Technologies, Graduate School of Enginerring, Osaka Univ, 2.Memory Etch Technology Team, Samsung Electronics)

11:15 AM - 11:30 AM

△ [18a-C309-8] Identification of Gas-chemistry-dependent “Effective” Polarity of Plasma-damaged Layer in Si Substrates

〇Takashi Hamano¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

11:30 AM - 11:45 AM

[18a-C309-9] Observation of Li diffusion in Si crystal by first-principles accelerated molecular dynamics simulation

〇Masahiro Yamamoto¹, Akio Ishii², Shuhei Shinzato², Shigenobu Ogata² (1.Panasonic, 2.Osaka Univ.)

11:45 AM - 12:00 PM

[18a-C309-10] Electronic properties and dissociation channels of CH₃F

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya university)

Session information

[18a-C309-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18a-C309-1] Development of neutral beam etching equipment for realizing mask-less defect-free fabrication

[18a-C309-2] Development of bio-template arrangement equipment for realizing mask-less defect-free fabrication

[18a-C309-3] Cyclic Etching of Cobalt via Oxide and Organometallic Complex

[18a-C309-4] Thermal etching reactions of acetylacetone with transition metals

[18a-C309-5] [INVITED] Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

△ [18a-C309-6] Potential structure analysis of a capillary plate in a dual frequency CCP

△ [18a-C309-7] Surface modification of Y₂O₃ by F⁺ ion irradiation

△ [18a-C309-8] Identification of Gas-chemistry-dependent “Effective” Polarity of Plasma-damaged Layer in Si Substrates

[18a-C309-9] Observation of Li diffusion in Si crystal by first-principles accelerated molecular dynamics simulation

[18a-C309-10] Electronic properties and dissociation channels of CH₃F

Authentication

Session information

[18a-C309-1~10] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18a-C309-1] Development of neutral beam etching equipment for realizing mask-less defect-free fabrication

[18a-C309-2] Development of bio-template arrangement equipment for realizing mask-less defect-free fabrication

[18a-C309-3] Cyclic Etching of Cobalt via Oxide and Organometallic Complex

[18a-C309-4] Thermal etching reactions of acetylacetone with transition metals

[18a-C309-5] [INVITED] Cyclic etching of tin-doped indium oxide using hydrogen-induced modified layer

△ [18a-C309-6] Potential structure analysis of a capillary plate in a dual frequency CCP

△ [18a-C309-7] Surface modification of Y2O3 by F+ ion irradiation

△ [18a-C309-8] Identification of Gas-chemistry-dependent “Effective” Polarity of Plasma-damaged Layer in Si Substrates

[18a-C309-9] Observation of Li diffusion in Si crystal by first-principles accelerated molecular dynamics simulation

[18a-C309-10] Electronic properties and dissociation channels of CH3F

Authentication

△ [18a-C309-7] Surface modification of Y₂O₃ by F⁺ ion irradiation

[18a-C309-10] Electronic properties and dissociation channels of CH₃F