Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[18p-C309-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Wed. Sep 18, 2019 1:45 PM - 5:15 PM C309 (C309)

Akihisa Ogino(Shizuoka Univ.), Shota Nunomura(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

△ [18p-C309-1] Examination of atmospheric plasma treatment conditions for bonding strength improvement of dental materials

〇Yuri Abe¹, Yuma Suenaga¹, Tomohiro Hoshino², Yoshiki Matsudate², Takehiko Sugano², Nobuhiro Yoda², Akitoshi Okino¹, Keiichi Sasaki² (1.FIRST, Tokyo Tech., 2.Tohoku univ, Dent.)

2:00 PM - 2:15 PM

[18p-C309-2] Effect of H₂-N₂ plasma exposure on micro/nanostructured titanium

〇(M2C)Zhongqiu Lin¹, He Wang¹, Naoki Aoyama¹, Toshiaki Suzuki¹, Masaaki Niwa¹, Mitsuya Motohashi¹ (1.Tokyo Denki Univ.)

2:15 PM - 2:30 PM

[18p-C309-3] Development of high-speed removal technology for surface coating on long objects
by MVP method using thermionic emission filament

〇(M2)Masaya Furuta¹, Kosaka Hiroyuki¹, Tatsuya Furuki¹, Yamakawa Kouji² (1.Gifu Univ., 2.katagiri engineering)

2:30 PM - 2:45 PM

△ [18p-C309-4] Comparison between characteristics of twin-cathode and twin-anode torches

〇(B)Kota Kawano¹, Hideki Sasaoka¹, Muneo Furuse¹, Satoshi Sakiyama² (1.NIT, Oshima college, 2.Yamaguchi Univ.)

2:45 PM - 3:00 PM

△ [18p-C309-5] Pressure dependence of polycrystalline diamond film deposition using
time-series exposure of modulated and non-modulated Ar/CH₄/H₂ induction thermal plasmas.

〇(M1)Kazufumi Hata¹, Kano Naoki¹, Nakano Yusuke¹, Tanaka Yasunori¹, Uesugi Yoshihiko¹, Ishijima Tatsuo¹ (1.Kanazawa Univ.)

3:00 PM - 3:15 PM

▲ [18p-C309-6] Direct observation of phase transformation and transient reflectivity of amorphous silicon film during micro-thermal plasma jet irradiation

〇(D)Nguyen ThiKhanh Hoa¹, Yuri Mizukawa¹, Hiroaki Hanafusa¹, Seichiiro Higashi¹ (1.Hiroshima Univ.)

3:30 PM - 3:45 PM

[18p-C309-7] Fabrication and Refractive Index Control of SiO₂ by programmable RAS

〇Yasuhito Tanaka^1,2, Delgado-Fuentes Gabriel¹, Shinichiro Saisho², Hideo Isshiki¹ (1.UEC, 2.SHINCRON CO., LTD)

3:45 PM - 4:00 PM

[18p-C309-8] Negative plasma potential in Mg-CF₄ direct current reactive sputtering discharge

〇Eiji Kusano¹ (1.Kanazawa Inst.Technol.)

4:00 PM - 4:15 PM

△ [18p-C309-9] Resistivity and crystallinity of transparent conductive films sputtering used MgO and C targets with varing deposition temperature

〇Takuya Miyazawa¹, Yuta Ochiai¹, Hiroyuki Suzuki¹, Wataru Hoshino¹, Miki Goto¹ (1.Kanagawa inst.)

4:15 PM - 4:30 PM

△ [18p-C309-10] Comparison of Ag thin films deposited in different Kr gas pressures

〇Ryosuke Sagara¹, Midori Kawamura¹, Takayuki Kiba¹, Yosio Abe¹, Kyung Ho Kim¹ (1.Kitami Institute of Tech.)

4:30 PM - 4:45 PM

△ [18p-C309-11] The behavior of ions in TiN sputtering plasma using high power impulse magnetron sputtering

〇(M2)Masayuki Nakamura¹, Keigo Takeda¹, Takayuki Ohta¹ (1.Meijo Univ.)

4:45 PM - 5:00 PM

[18p-C309-12] Low-temperature Formation of High-Mobility IGZO Thin Film Transistors using Reactive Plasma Processes

Yuichi Setsuhara¹, 〇Kosuke Takenaka¹, Hiroyuki Hirayama¹, Masashi Endo¹, Giichiro Uchida², Akinori Ebe³ (1.Osaka Univ., 2.Meijo Univ., 3.EMD Corp.)

5:00 PM - 5:15 PM

△ [18p-C309-13] Nanoparticle formation on ZnO thin film by laser effect during RF sputtering

〇(M2)Wataru Wakaki¹, Akio Sanpei¹, Noriyuki Hasuike¹, Susumu Kamoi², Haruhiko Himura¹ (1.Kyoto Inst. of Tech., 2.Kyoto Pre. Tech. Center)

Session information

[18p-C309-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [18p-C309-1] Examination of atmospheric plasma treatment conditions for bonding strength improvement of dental materials

[18p-C309-2] Effect of H₂-N₂ plasma exposure on micro/nanostructured titanium

[18p-C309-3] Development of high-speed removal technology for surface coating on long objects
by MVP method using thermionic emission filament

△ [18p-C309-4] Comparison between characteristics of twin-cathode and twin-anode torches

△ [18p-C309-5] Pressure dependence of polycrystalline diamond film deposition using
time-series exposure of modulated and non-modulated Ar/CH₄/H₂ induction thermal plasmas.

▲ [18p-C309-6] Direct observation of phase transformation and transient reflectivity of amorphous silicon film during micro-thermal plasma jet irradiation

[18p-C309-7] Fabrication and Refractive Index Control of SiO₂ by programmable RAS

[18p-C309-8] Negative plasma potential in Mg-CF₄ direct current reactive sputtering discharge

△ [18p-C309-9] Resistivity and crystallinity of transparent conductive films sputtering used MgO and C targets with varing deposition temperature

△ [18p-C309-10] Comparison of Ag thin films deposited in different Kr gas pressures

△ [18p-C309-11] The behavior of ions in TiN sputtering plasma using high power impulse magnetron sputtering

[18p-C309-12] Low-temperature Formation of High-Mobility IGZO Thin Film Transistors using Reactive Plasma Processes

△ [18p-C309-13] Nanoparticle formation on ZnO thin film by laser effect during RF sputtering

Authentication

Session information

[18p-C309-1~13] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [18p-C309-1] Examination of atmospheric plasma treatment conditions for bonding strength improvement of dental materials

[18p-C309-2] Effect of H2-N2 plasma exposure on micro/nanostructured titanium

[18p-C309-3] Development of high-speed removal technology for surface coating on long objectsby MVP method using thermionic emission filament

△ [18p-C309-4] Comparison between characteristics of twin-cathode and twin-anode torches

△ [18p-C309-5] Pressure dependence of polycrystalline diamond film deposition usingtime-series exposure of modulated and non-modulated Ar/CH4/H2 induction thermal plasmas.

▲ [18p-C309-6] Direct observation of phase transformation and transient reflectivity of amorphous silicon film during micro-thermal plasma jet irradiation

[18p-C309-7] Fabrication and Refractive Index Control of SiO2 by programmable RAS

[18p-C309-8] Negative plasma potential in Mg-CF4 direct current reactive sputtering discharge

△ [18p-C309-9] Resistivity and crystallinity of transparent conductive films sputtering used MgO and C targets with varing deposition temperature

△ [18p-C309-10] Comparison of Ag thin films deposited in different Kr gas pressures

△ [18p-C309-11] The behavior of ions in TiN sputtering plasma using high power impulse magnetron sputtering

[18p-C309-12] Low-temperature Formation of High-Mobility IGZO Thin Film Transistors using Reactive Plasma Processes

△ [18p-C309-13] Nanoparticle formation on ZnO thin film by laser effect during RF sputtering

Authentication

[18p-C309-2] Effect of H₂-N₂ plasma exposure on micro/nanostructured titanium

[18p-C309-3] Development of high-speed removal technology for surface coating on long objects
by MVP method using thermionic emission filament

△ [18p-C309-5] Pressure dependence of polycrystalline diamond film deposition using
time-series exposure of modulated and non-modulated Ar/CH₄/H₂ induction thermal plasmas.

[18p-C309-7] Fabrication and Refractive Index Control of SiO₂ by programmable RAS

[18p-C309-8] Negative plasma potential in Mg-CF₄ direct current reactive sputtering discharge