Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20a-E311-1~11] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 20, 2019 9:00 AM - 12:00 PM E311 (E311)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-E311-1] 3C-SiC n-MOS capacitor and n-MOSFET with SiO₂/Al₂O₃ insulator

〇Keisuke Yamamoto¹, Ryusei Oka¹, Dong Wang¹, Hiroshi Nakashima², Shigeomi Hishiki³, Keisuke Kawamura^2,3 (1.IGSES, Kyushu Univ., 2.GIC, Kyushu Univ., 3.Air Water)

9:15 AM - 9:30 AM

△ [20a-E311-2] Charge analysis of SiO₂/Al₂O₃ gate dielectric on (111) oriented 3C-SiC

〇Ryusei Oka¹, Keisuke Yamamoto¹, Dong Wang¹, Hiroshi Nakashima², Shigeomi Hishiki³, Keisuke Kawamura³ (1.IGSES Kyushu Univ., 2.GIC Kyushu Univ., 3.Air water)

9:30 AM - 9:45 AM

△ [20a-E311-3] Dependence of channel mobility on doping concentration of p-body in POCl₃-annealed SiC MOSFETs

〇Koji Ito¹, Masahiro Horita^1,2, Jun Suda^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Nagoya Univ.)

9:45 AM - 10:00 AM

△ [20a-E311-4] Observation of interface state density distribution in macrostepped SiO₂/SiC using local-DLTS

〇Anna Hosaka¹, Kohei Yamasue¹, Judith Woerle^2,3, Corrado Bongiorno⁴, Gabriel Ferro⁵, Ulrike Grossner², Massimo Camarda^2,3, Cho Yasuo¹ (1.Tohoku Univ., 2.ETH Zurich, 3.Paul Scherrer Institute, 4.CNR-IMM, 5.Lyon Univ.)

10:00 AM - 10:15 AM

△ [20a-E311-5] Deep interface states at nitrogen-passivated SiO₂/SiC
by photo-assisted C-V measurements

〇(D)Keita Tachiki¹, Kazutaka Kanegae¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

10:15 AM - 10:30 AM

△ [20a-E311-6] Analysis of Three-Level Charge Pumping Characteristics of
4H-SiC MOSFETs Considering Near-Interface Traps

〇Yuta Matsuya¹, Xufang Zhang¹, Dai Okamoto¹, Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ. of Tsukuba)

10:45 AM - 11:00 AM

▼ [20a-E311-7] Significant effects on SiO₂/4H-SiC band alignment induced by the difference of employed crystal face and post oxidation annealing processes

〇(D)Taehyeon Kil¹, Koji Kita¹ (1.The Univ. of Tokyo)

11:00 AM - 11:15 AM

△ [20a-E311-8] Analysis of conduction mechanism of hole leakage current in thermally grown oxide on p-channel 4H-SiC MOSFETs

〇Hiroki Nemoto¹, Dai Okamoto¹, Xufang Zhang¹, Mitsuru Sometani², Mitsuo Okamoto², Tetsuo Hatakeyama², Shinsuke Harada², Noriyuki Iwamuro¹, Hiroshi Yano¹ (1.Univ.Tsukuba, 2.AIST)

11:15 AM - 11:30 AM

[20a-E311-9] Improved V_th stability of SiC MOSFET by post-nitridation CO₂ annealing

〇Takuji Hosoi¹, Momoe Ohsako¹, Koji Ito², Takayoshi Shimura¹, Tsunenobu Kimoto², Heiji Watanabe¹ (1.Osaka Univ., 2.Kyoto Univ.)

11:30 AM - 11:45 AM

[20a-E311-10] The Effects of Coulomb Scattering Centers at SiO₂/SiC interfaces on Electron Mobility in Inversion Layers

〇Tetsuo Hatakeyama^1,2, Mitsuru Sometani², Hirohisa Hirai², Shinsuke Harada² (1.Toyama Pref. Univ., 2.AIST)

11:45 AM - 12:00 PM

[20a-E311-11] Influence of non-uniform interface defect distribution on channel mobility in SiC MOSFET — Study based on local DLTS measurement and device simulation —

〇Kohei Yamasue¹, Yuji Yamagishi¹, Yasuo Cho¹ (1.Tohoku Univ.)

Session information

[20a-E311-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[20a-E311-1] 3C-SiC n-MOS capacitor and n-MOSFET with SiO₂/Al₂O₃ insulator

△ [20a-E311-2] Charge analysis of SiO₂/Al₂O₃ gate dielectric on (111) oriented 3C-SiC

△ [20a-E311-3] Dependence of channel mobility on doping concentration of p-body in POCl₃-annealed SiC MOSFETs

△ [20a-E311-4] Observation of interface state density distribution in macrostepped SiO₂/SiC using local-DLTS

△ [20a-E311-5] Deep interface states at nitrogen-passivated SiO₂/SiC
by photo-assisted C-V measurements

△ [20a-E311-6] Analysis of Three-Level Charge Pumping Characteristics of
4H-SiC MOSFETs Considering Near-Interface Traps

▼ [20a-E311-7] Significant effects on SiO₂/4H-SiC band alignment induced by the difference of employed crystal face and post oxidation annealing processes

△ [20a-E311-8] Analysis of conduction mechanism of hole leakage current in thermally grown oxide on p-channel 4H-SiC MOSFETs

[20a-E311-9] Improved V_th stability of SiC MOSFET by post-nitridation CO₂ annealing

[20a-E311-10] The Effects of Coulomb Scattering Centers at SiO₂/SiC interfaces on Electron Mobility in Inversion Layers

[20a-E311-11] Influence of non-uniform interface defect distribution on channel mobility in SiC MOSFET — Study based on local DLTS measurement and device simulation —

Authentication

Session information

[20a-E311-1~11] 15.6 Group IV Compound Semiconductors (SiC)

[20a-E311-1] 3C-SiC n-MOS capacitor and n-MOSFET with SiO2/Al2O3 insulator

△ [20a-E311-2] Charge analysis of SiO2/Al2O3 gate dielectric on (111) oriented 3C-SiC

△ [20a-E311-3] Dependence of channel mobility on doping concentration of p-body in POCl3-annealed SiC MOSFETs

△ [20a-E311-4] Observation of interface state density distribution in macrostepped SiO2/SiC using local-DLTS

△ [20a-E311-5] Deep interface states at nitrogen-passivated SiO2/SiCby photo-assisted C-V measurements

△ [20a-E311-6] Analysis of Three-Level Charge Pumping Characteristics of4H-SiC MOSFETs Considering Near-Interface Traps

▼ [20a-E311-7] Significant effects on SiO2/4H-SiC band alignment induced by the difference of employed crystal face and post oxidation annealing processes

△ [20a-E311-8] Analysis of conduction mechanism of hole leakage current in thermally grown oxide on p-channel 4H-SiC MOSFETs

[20a-E311-9] Improved Vth stability of SiC MOSFET by post-nitridation CO2 annealing

[20a-E311-10] The Effects of Coulomb Scattering Centers at SiO2/SiC interfaces on Electron Mobility in Inversion Layers

[20a-E311-11] Influence of non-uniform interface defect distribution on channel mobility in SiC MOSFET — Study based on local DLTS measurement and device simulation —

Authentication

[20a-E311-1] 3C-SiC n-MOS capacitor and n-MOSFET with SiO₂/Al₂O₃ insulator

△ [20a-E311-2] Charge analysis of SiO₂/Al₂O₃ gate dielectric on (111) oriented 3C-SiC

△ [20a-E311-3] Dependence of channel mobility on doping concentration of p-body in POCl₃-annealed SiC MOSFETs

△ [20a-E311-4] Observation of interface state density distribution in macrostepped SiO₂/SiC using local-DLTS

△ [20a-E311-5] Deep interface states at nitrogen-passivated SiO₂/SiC
by photo-assisted C-V measurements

△ [20a-E311-6] Analysis of Three-Level Charge Pumping Characteristics of
4H-SiC MOSFETs Considering Near-Interface Traps

▼ [20a-E311-7] Significant effects on SiO₂/4H-SiC band alignment induced by the difference of employed crystal face and post oxidation annealing processes

[20a-E311-9] Improved V_th stability of SiC MOSFET by post-nitridation CO₂ annealing

[20a-E311-10] The Effects of Coulomb Scattering Centers at SiO₂/SiC interfaces on Electron Mobility in Inversion Layers