Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-E311-1~17] 15.6 Group IV Compound Semiconductors (SiC)

Fri. Sep 20, 2019 1:30 PM - 6:15 PM E311 (E311)

Hiroshi Yano(Univ. of Tsukuba), Yasunori Tanaka(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 1:45 PM

[20p-E311-1] Peculiarity of Wet Oxidation on C-face 4H-SiC: An EDMR Aspect

〇Takahide Umeda¹, Yohei Kagoyama¹, Kazuteru Tomita¹, Yuta Abe¹, Mitsuo Okamoto², Tetsuo Hatakeyama², Shinsuke Harada² (1.Univ. of Tsukuba, 2.AIST)

1:45 PM - 2:00 PM

[20p-E311-2] Electrically-Detected-Magnetic-Resonance (EDMR) Spectroscopy on Nitrided
4H-SiC(000)/SiO₂ Interfaces

〇(M1)Masato Narigasawa¹, Eito Higa¹, Mitsuru Sometani², Tetsuo Hatakeyama², Shinsuke Harada², Takahide Umeda¹ (1.Univ. of Tsukuba., 2.AIST.)

2:00 PM - 2:15 PM

[20p-E311-3] Ab-initio study on 4H-SiC(0-33-8)/SiO₂ interface structures and its electronic structures

〇Yuichiro Matsushita¹, Tetsuo Hatakeyama² (1.Tokyo Inst. Tech., 2.Toyama Pref. Univ.)

2:15 PM - 2:30 PM

[20p-E311-4] Physical Analysis of Remained Oxidation Byproducts as the Origins of Lattice
Distortion at 4H-SiC Surface

Adhi Dwi Hatmanto¹, 〇Koji Kita¹ (1.The Univ. of Tokyo)

2:30 PM - 2:45 PM

[20p-E311-5] Nitrogen atom desorption process during Ar annealing from 4H-SiC MOS interface on various crystal faces

〇(M1)Yusuke Samata¹, Koji Kita¹ (1.The Univ. of Tokyo)

3:00 PM - 3:15 PM

[20p-E311-6] [Young Scientist Presentation Award Speech] Forward Thermionic Field Emission Current and Reverse Field Emission Current in Heavily-Doped SiC Schottky Barrier Diodes

〇Masahiro Hara¹, Satoshi Asada¹, Takuya Maeda¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:15 PM - 3:30 PM

[20p-E311-7] Characterization of pin diodes fabricated by ion implantation into high-purity semi-insulating SiC substrate

〇Mitsuaki Kaneko^1,2, Tsibizov Alexander², Kimoto Tsunenobu¹, Grossner Ulrike² (1.Kyoto Univ., 2.ETH Zurich)

3:30 PM - 3:45 PM

△ [20p-E311-8] Experimental Study on Short-Channel Effects in Side-Gate SiC JFETs

〇Masashi Nakajima¹, Qimin Jin¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

3:45 PM - 4:00 PM

△ [20p-E311-9] Electrical Properties of High-Purity Semi-Insulating 4H-SiC Substrates Annealed at High Temperature or Thermally Oxidized

〇Chansoon Koo¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

4:00 PM - 4:15 PM

[20p-E311-10] Characterization of Electrical Properties of Ion Implanted 4H-SiC by THz-TDSE

〇(M1)Kiichi Sato¹, Takashi Fujii^1,3, Tsutomu Araki¹, Shinichiro Mouri¹, Kotaro Ishiji², Toshiyuki Iwamoto³, Ryuichi Sugie⁴ (1.Ritsumeikan Univ., 2.Kyushu Synchrotron Light Research Center, 3.PNP, 4.TRC)

4:15 PM - 4:30 PM

[20p-E311-11] Phonon-assisted optical absorption induced by Franz-Keldysh effect in
4H-SiC p-n junction diodes under electric field along <11-20> direction

〇Takuya Maeda¹, Xilun Chi¹, Hajime Tanaka¹, Masahiro Horita^1,2, Jun Suda^1,2, Tsunenobu Kimoto¹ (1.Kyoto Univ., 2.Nagoya Univ.)

4:45 PM - 5:00 PM

[20p-E311-12] Expansion of Shockley Stacking Faults in 4H-SiC Epitaxial Layer by Forward Bias Current or Ultraviolet Irradiation

〇Kazumi Takano¹, Yoshihiko Ohsaki¹, Yasuyuki Igarashi¹ (1.ITES)

5:00 PM - 5:15 PM

△ [20p-E311-13] Theoretical Analysis of Carrier Lifetimes in p-type SiC

〇Shoma Yamashita¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

5:15 PM - 5:30 PM

[20p-E311-14] Estimation of high injection lifetime and diffusion length in a 4H-SiC thick epilayer

〇(M2)Keisuke Nagaya¹, Takashi Hirayama¹, Akira Miyasaka², Kazutoshi Kojima³, Tomohisa Kato³, Hajime Okumura³, Masashi Kato¹ (1.NITech., 2.Showa Denko K.K., 3.AIST.)

5:30 PM - 5:45 PM

[20p-E311-15] Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC

〇(M1)Takuma Narahara^1,2, Shinichiro Sato², Kazutoshi Kojima³, Yuichi Yamazaki², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST, 3.AIST)

5:45 PM - 6:00 PM

[20p-E311-16] The effect of annealing temperature for ODMR signals of silicon vacancy in SiC crystal

〇(M2)Yoji Chiba^1,2, Yuichi Yamazaki², Takahiro Makino², Shin-ichiro Sato², Naoto Yamada², Takahiro Satoh², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST)

6:00 PM - 6:15 PM

[20p-E311-17] Optically detected magnetic resonance of 3D arrayed silicon vacancies in SiC pn diodes

〇Yuichi Yamazaki¹, Yoji Chiba^1,2, Shin-Ichiro Sato¹, Takahiro Makino¹, Naoto Yamada¹, Takahiro Satoh¹, Yasuto Hijikata², Kazutoshi Kojima³, Hidekazu Tsuchida⁴, Norihiro Hoshino⁴, Takeshi Ohshima¹ (1.QST, 2.Saitama Univ., 3.AIST, 4.CRIEPI)

Session information