Oral presentation
[10p-S202-1~14] 15.6 Group IV Compound Semiconductors (SiC)
Fri. Sep 10, 2021 1:00 PM - 5:00 PM S202 (Oral)
Kazuma Eto(AIST)
△:Presentation by Applicant for JSAP Young Scientists Presentation Award
▲:English Presentation
▼:Both of Above
No Mark:None of Above
1:00 PM - 1:15 PM
〇(M2)Yoshiki Inoue1, Tomoaki Furusho2, Kentaro Kutsukake2,3, Shunta Harada1,2, Miho Tagawa1,2, Toru Ujihara1,2,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.AIP RIKEN, 4.GAN-OIL AIST)
1:15 PM - 1:30 PM
〇Toru Ujihara1,2,3, Can Zhu1, Yosuke Tsunooka1, Koki Suziki1, Wancheng Yu1, Xinbo Liu2, Yifan Dang2, Tomoaki Furusho1, Kentaro Kutsukake1,3, Shunta Harada1,2, Miho Tagawa1,2, Mai Abe4, Kenya Tanaka4 (1.IMaSS, Nagoya Univ., 2.Nagoya Univ., 3.RIKEN, 4.Hitachi Metals)
1:30 PM - 1:45 PM
〇Yoma Yamane1, Lu Weifang1, Kosuke Yanai1, Keita Kodera1, Satosi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ.)
1:45 PM - 2:00 PM
△ [10p-S202-4] Passivation effect on 4H-SiC porous crystals foemed by voltage-controlled anodization
〇Keita Kodera1, Kosuke Yanai1, Yoma Yamane1, Lu Weifang1, Ou Yiyu2, Motoaki Iwaya1, Tetsuya Takeuchi1, Satishi Kamiyama1 (1.Meijo Univ, 2.Technical University Denmark)
2:15 PM - 2:30 PM
〇Tomoya Kimura1, Kenta Chokawa2, Atsushi Oshiyama2, Kenji Shiraishi2,1 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)
2:30 PM - 2:45 PM
〇Ryoya Ishikawa1, Masahiro Hara1, Hajime Tanaka1,2, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1.Kyoto Univ., 2.Osaka Univ.)
2:45 PM - 3:00 PM
〇Toshiki Mii1, Masashi Kato1 (1.Nagoya Inst. of Tech.)
3:00 PM - 3:15 PM
〇Kazuhiro Tanaka1, Keisuke Nagaya1, Masashi Kato1 (1.NITech)
3:15 PM - 3:30 PM
〇Koichi Murata1, Satoshi Asada1, Hidekazu Tsuchida1 (1.CRIEPI)
3:30 PM - 3:45 PM
〇Kazutoshi Kojima1, Shin-ichiro Sato2, Takeshi Ohshima2, SHin-Ichiro Kuroki3, Hiroshi Yamaguchi1 (1.AIST, 2.QST, 3.Hiroshima Univ.)
4:00 PM - 4:15 PM
〇Yohsuke Matsushita1, Kazumi Takano1, Yasuyuki Igarashi1, Muneo Sasaki2, Yuya Yamada2 (1.ITES Co. Ltd., 2.Industrial Research Center of Shiga Prefecture)
4:15 PM - 4:30 PM
〇Johji Nishio1, Chiharu Ota1, Ryosuke Iijima1 (1.Toshiba R&D Center)
4:30 PM - 4:45 PM
〇Masaya Hayashi1, Hitoshi Habuka1, Yoshinao Takahashi2, Tomohisa Kato3 (1.Yokohama National Univ., 2.KANTO DENKA KOGYO, 3.AIST)
4:45 PM - 5:00 PM
Takumi Mamyouda1, 〇Yuika Takizawa1, Hitoshi Habuka1, Akio Ishiguro2, Shigeaki Ishii2, Yoshiaki Daigo2, Hideki Ito2, Ichiro Mizushima2, Yoshinao Takahashi3 (1.Yokohama National Univ., 2.NuFlare Technology, 3.KANTO DENKA KOGYO)