Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[23a-B204-1~11] 13.7 Compound and power devices, process technology and characterization

Fri. Sep 23, 2022 9:00 AM - 12:00 PM B204 (B204)

Kozo Makiyama(Sumitomo Electric Industries, Ltd.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[23a-B204-1] MOCVD growth of C-doped GaAsSb on GaN with Surface Arsenide Layer

〇Takuya Hoshi¹, Yuki Yoshiya¹, Hiroki Sugiyama¹, Fumito Nakajima¹ (1.NTT Device Technology Labs.)

9:15 AM - 9:30 AM

[23a-B204-2] Fabrication of a 150 nm Class Y-Shaped Gate AlGaN/GaN HEMT Using i-Line Stepper

〇Yuji Ando^1,2, Hidemasa Takahashi¹, Ryutaro Makisako¹, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Inst. Tech.)

9:30 AM - 9:45 AM

[23a-B204-3] Fabrication of GaN FinFETs using selective area growth: Improvements of process to form growth windows

〇Yusuke Hisatsune¹, Takashi Ota¹, Mitsutaka Sasaki¹, Tokio Takahashi², Toshihide Ide², Mitsuaki Shimizu², Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹ (1.Tokyo Tech, 2.AIST)

9:45 AM - 10:00 AM

[23a-B204-4] Evaluation of electrical characteristics of AlGaN/GaN HEMTs on semi-insulating GaN substrates doped with Fe, C or Mn at room temperature

〇Daiki Tanaka¹, Kenji Iso^2,3, Akinori Miura^2,3, Yuji Ando^1,3, Jun Suda^1,3 (1.Nagoya Univ., 2.Mitsubishi Chemical, 3.Nagoya Univ. IMaSS)

10:00 AM - 10:15 AM

[23a-B204-5] GaN channel thickness dependence in AlGaN / GaN HEMT with back barriers

〇Yoshikaze Ito¹, Seita Tamai¹, Takuya Hoshi², Takahiro Gotow¹, Yasuyuki Miyamoto¹ (1.Tokyo tech., 2.NTT Device Technology Lab.)

10:15 AM - 10:30 AM

[23a-B204-6] Improvement of performance of N-Polar AlGaN/AlN Heterojunction FET

〇Daisuke Inahara¹, Shunsuke Matuda¹, Wataru Matsumura¹, Ryo Okuno¹, Koki Hanasaku¹, Taketo Kowaki¹, Minagi Miyamoto¹, Ren Kanezaki¹, Shunsuke Saito¹, Kai Fujii¹, Satoshi Kurai¹, Narihito Okada¹, Yongzhao Yao², Yukari Ishikawa², Atsushi Tanaka³, Shugo Nitta³, Yoshio Honda³, Hiroshi Amano³, Yoichi Yamada¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ, 2.JFCC, 3.Nagoya Univ., IMaSS)

10:45 AM - 11:00 AM

[23a-B204-7] Threshold voltage shift of GaN HEMT with high spontaneous polarized AlScN films

〇Ryusei Nonaka¹, Takuya Hosi¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui², Kuniyuki Kakushima¹ (1.Tokyo Tech School of Eng., 2.Tokyo Tech IIR)

11:00 AM - 11:15 AM

[23a-B204-8] Fabrication of GaN/3C-SiC on-diamond HEMT structure for high output power devices

〇Ryo Kagawa¹, Naoteru Shigekawa², Jianbo Liang², Keisuke Kawamura³, Yoshiki Sakaida³, Sumito Ouchi³, Uratani Hiroki³, Yasuo Shimizu⁴, Yutaka Ohno⁴, Yusuke Nagai⁴ (1.Osaka City Univ., 2.Osaka Metropolitan Univ., 3.Air Water inc., 4.IMR Tohoku Univ.)

11:15 AM - 11:30 AM

[23a-B204-9] Evaluation of GaN/GaN bonding interfaces fabricated by Surface-activated bonding

〇(M2)Kazuki Sawai¹, Jianbo Liang^1,2, Yasuo Shimizu³, Yutaka Ohno³, Yasuyoshi Nagai³, Naoteru Shigekawa^1,2 (1.Osaka City Univ., 2.Osaka Metropolitan Univ., 3.IMR Tohoku Univ.)

11:30 AM - 11:45 AM

[23a-B204-10] Effect of surface treatment on AlGaN/GaN MIS-HEMTs after forming the recess structure

〇(M2)Keitaro Toda¹, Toshiharu Kubo¹, Takashi Egawa¹ (1.NITech)

11:45 AM - 12:00 PM

[23a-B204-11] Analysis for depletion width in AlGaN/GaN heterostructures under Ohmic-metals by using multi-probe-Hall and high-frequency measurements

〇kazuya Uryu^1,2, Toshi-kazu Suzuki¹ (1.JAIST, 2.ATL)

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