Oral presentation

[15p-D209-1~12] 7.2 Applications and technologies of electron beams

Wed. Mar 15, 2023 1:30 PM - 4:45 PM D209 (Building No. 11)

Katsuhisa Murakami(AIST), Takafumi Ishida(Nagoya University)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[15p-D209-1] Precise atomic distance measurement of Pt surface by HAADF STEM

〇Shunsuke Kobayashi¹, Yuki Omori¹, Hsin-Hui Huang¹, Akihide Kuwabara¹ (1.JFCC)

1:45 PM - 2:00 PM

[15p-D209-2] In-situ high-resolution STEM observation of samples in environmental cells

〇Masaki Takeguchi¹, Toshiaki Takei¹, Kazutaka Mitsuishi¹ (1.NIMS)

2:00 PM - 2:15 PM

[15p-D209-3] Stroboscopic Electron Holography with a sub-microsecond Exposure Time Window

〇Yoh Iwasaki¹, Zentaro Akase², Keiko Shimada¹, Ken Harada¹, Daisuke Shindo¹ (1.RIKEN, 2.Tohoku Univ.)

2:15 PM - 2:30 PM

▲ [15p-D209-4] In situ scanning electron microscopy observation of ion distribution variation
at the electrode-electrolyte interface in an electrochemical cell

〇Gada He¹, Yoshifumi Oshima¹, Masahiko Tomitori¹ (1.JAIST)

2:30 PM - 2:45 PM

[15p-D209-5] Lattice defects in Ice by pulsed electron irradiation

〇Hiroto Ito¹, Thi Mai Dung Do¹, Hisayuki Suematsu¹, Takashi Kikuchi¹, Tadachika Nakayama¹, Go Imada² (1.Nagaoka Univ. Tech., 2.Niigata Inst. Tech.)

2:45 PM - 3:00 PM

[15p-D209-6] Changes in SK chart depending on the modification state of the emitter surface

〇Takashi Kawakubo¹, Hiroki Kuroda¹, Koji Misaki¹ (1.NIT,Kagawa)

3:15 PM - 3:30 PM

[15p-D209-7] [The 53rd Young Scientist Presentation Award Speech] Development of transfer-free planner-type electron sources based on graphene/h-BN heterostructure

〇Masaya Yamamoto^1,2, Hiromasa Murata², Masayoshi Nagao², Hidenori Mimura¹, Yoichiro Neo¹, Katsuhisa Murakami² (1.Shizuoka Univ., 2.AIST.)

3:30 PM - 3:45 PM

[15p-D209-8] Investigation of TiN coating on Si emitter for realization of high current electron source

〇Hiromasa Murata¹, Katsuhisa Murakami¹, Masayoshi Nagao¹ (1.AIST)

3:45 PM - 4:00 PM

[15p-D209-9] Change in Contact Potential Difference of Reactive Sputter-Deposited Hafnium Nitride Thin Films by Thermal Treatment

〇Tomoaki Osumi^1,2, Masayoshi Nagao², Yasuhito Gotoh¹ (1.Kyoto Univ., 2.AIST)

4:00 PM - 4:15 PM

[15p-D209-10] Field Electron Emission from High-temperature Superconductor Bi2212

Hiroki Tsuda¹, Haruto Obitsu¹, 〇Shigekazu Nagai¹, Tatsuo Iwata¹, Koichi Hata¹ (1.Mie Univ.)

4:15 PM - 4:30 PM

[15p-D209-11] Development of an electron gun using a transmission type LaB₆ thin film photocathode

〇Takafumi Ishida¹, Makoto Kuwahara¹, Koh Saitoh¹ (1.Nagoya Univ.)

4:30 PM - 4:45 PM

[15p-D209-12] Brightness and Richardson constant of LaB₆ thermionic emission in low-temperature operation

〇Futo Okada¹, Chotaro Kajita¹, Hidekazu Murata¹, Takayuki Tanaka¹, Eiji Rokuta¹ (1.Meijo Univ.)

Sessions

7 Beam Technology and Nanofabrication » 7.2 Applications and technologies of electron beams

[15p-D209-1~12] 7.2 Applications and technologies of electron beams

[15p-D209-1] Precise atomic distance measurement of Pt surface by HAADF STEM

[15p-D209-2] In-situ high-resolution STEM observation of samples in environmental cells

[15p-D209-3] Stroboscopic Electron Holography with a sub-microsecond Exposure Time Window

▲ [15p-D209-4] In situ scanning electron microscopy observation of ion distribution variation
at the electrode-electrolyte interface in an electrochemical cell

[15p-D209-5] Lattice defects in Ice by pulsed electron irradiation

[15p-D209-6] Changes in SK chart depending on the modification state of the emitter surface

[15p-D209-7] [The 53rd Young Scientist Presentation Award Speech] Development of transfer-free planner-type electron sources based on graphene/h-BN heterostructure

[15p-D209-8] Investigation of TiN coating on Si emitter for realization of high current electron source

[15p-D209-9] Change in Contact Potential Difference of Reactive Sputter-Deposited Hafnium Nitride Thin Films by Thermal Treatment

[15p-D209-10] Field Electron Emission from High-temperature Superconductor Bi2212

[15p-D209-11] Development of an electron gun using a transmission type LaB₆ thin film photocathode

[15p-D209-12] Brightness and Richardson constant of LaB₆ thermionic emission in low-temperature operation

Authenticate

Sessions

7 Beam Technology and Nanofabrication » 7.2 Applications and technologies of electron beams

[15p-D209-1~12] 7.2 Applications and technologies of electron beams

▲ [15p-D209-4] In situ scanning electron microscopy observation of ion distribution variationat the electrode-electrolyte interface in an electrochemical cell

Authenticate

▲ [15p-D209-4] In situ scanning electron microscopy observation of ion distribution variation
at the electrode-electrolyte interface in an electrochemical cell