[D-4-1] Ultra High Speed GaInAsP/InP Self Aligned Constricted Mesa DFB Lasers Grown Entirely by MOCVD

Motoyasu MORINAGA, Yuzo HIRAYAMA, Hideto FURUYAMA, Nobuo SUZUKI, Kazuhiro EGUCHI, Masaru NAKAMURA (1.TOSHIBA Research and Development Center)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-4-2] Long Cavity DFB Laser for Linewidth Narrowing

Shouichi Ogita, Yuji Kotaki, Katsuhiro Kihara, Manabu Matsuda, Hiroshi Ishikawa (1.Fujitsu Laboratories Ltd, Atsugi)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-4-3] MOCVD Grown SA-CM DFB Laser Arrays with Wavelengths Identical to within 1A

Yuzo Hirayama, Hideto Furuyama, Motoyasu Morinaga, Nobuo Suzuki, Kazuhiro Eguchi, Masaru Nakamura (1.Toshiba Research and Development Center)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-4-4] Fabrication and Characteristics of a Gain-Coupled Distributed-Feedback Laser Diode

Yi LUO, Yoshiaki NAKANO, Kunio TADA (1.Department of Electronic Engineering Department of Electrical Engineering University of Tokyo)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-5-1] All Optical Flip-Flop Operation of Bistable Laser Diode

T. Odagawa, T. Sanada, S. Yamakoshi (1.FUJITSU LABORATORIES, ATSUGI)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-5-2] Enhanced Exciton Effects in Dielectric Quantum Well (DQW)

Masami Kumagai, Toshihide Takagahara (1.NTT Basic Research Laboratories)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-5-3] High Speed Modulation Capability and Low Threshold Current Density in Strained Quantum Well Laser Structures

I. Suemune, L. A. Coldren, M. Yamanishi, Y. Kan (1.Faculty of Engineering, Hiroshima University, 2.Department of ECE, University of California)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-5-4] CW Operation and Extremly Low Capacitance of TJ-BH Laser Diodes Having MQW Active Layers Fabricated by Entire MOVPE

Kenji Shimoyama, Masanori Katoh, Yoshihiro Suzuki, Takuzoh Satoh, Yuichi Inoue, Satoru Nagao, Hideki Gotoh (1.Thin Film Laboratory, Research Center, Mitsubishi Kasei Co., 2.Electrotechnical Laboratory)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-6-1] Photodetector with the Embedded Schottky Electrode

Ki-Woong Chung, Young-Se Kwon (1.Dept. of Electrical Engineering, Korea Advanced Institute of Science and Technology)

1988 International Conference on Solid State Devices and Materials |PDF Download

[D-6-2] Picosecond Response of GaAs/AlGaAs Planar Schottky Barrier Photodiode

D. H. Lee, S. S. Li, N. G. Paulter (1.Department of Electrical Engineering University of Florida, 2.Los Alamos National Laboratory)

1988 International Conference on Solid State Devices and Materials |PDF Download