[S-D-3] Pyrolytic and Photolytic Dissociation of Trimethylgallium on Si, Au, and Al Substrates

S. SHOGEN, Y. MATSUMI, M. KAWASAKI, I. TOYOSHIMA (1.Research Institute of Applied Electricity and Research Center for Catalysis, Hokkaido University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-D-4] Quantum-Chemical Study on the Mechanism of Atomic Layer Epitaxy of GaAs Using Arsine and Trimethylgallium

Ryotaro Irie, Noriyuki Murakami (1.Central Research Laboratory, Hitachi, Ltd., 2.Information Systems Works, Hitachi, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-D-5] Digital Etching of GaAs Using Alternative Incidence of Cl Radicals and Low Energy Ar Ions

Takashi MEGURO, Masashi ISHII, Hirokazu KODAMA, Manabu HAMAGAKI, Tamio HARA, Yasuhiro YAMAMOTO, Yoshinobu AOYAGI (1.RIKEN (The Institute of Physical and Chemical Research), 2.College of Engineering, Hosei University, 3.Research Center of Ion Bearn Technology, Hosei Universiry)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-D-6] Sulfur-Passivation Pretreatment of GaAs Surface for Layer-by-Layer Growth and Atomic Layer Epitaxy of ZnSe by MOMBE

Shigeo FUJITA, Yi-hong WU, Yasunori MIYAZAKI, Takashi TOYODA, Yoichi KAWAKAMI, Shizuo FUJITA (1.Department of Electrical Engineering Kyoto University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-D-7] High-Quality ZnSe/GaAs Superlattice Grown by Migration-Enhanced Epitaxy

N. Kobayashi, S. Ramesh, Y. Horikoshi (1.NTT Basic Research Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-D-8] Fabrication and Characterization of GeSi Superlattices

Tsunenori SAKAMOTO, Hajime OKUMURA, Kazushi MIKI, Kunihiro SAKAMOTO, Sadafumi YOSHIDA, Hiroyuki Oyanagi, Hirotaka Yamaguchi, Kumiko Asami, Shun-ichi Gonda (1.Electrotechnical Laboratory, 2.The Institute of Scientific and Industrial Research, Osaka University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-D-9] Influence of Strain on the Electrical Properties of Ge Channel in Modulation-Doped p-Si0.5Ge0.5/Ge/Si1-xGex Heterostructure

Hiroyuki Etoh, Eiichi Murakami, Akio Nishida, Kiyokazu Nakagawa, Masanobu Miyao (1.Central Research Laboratory, Hitachi, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-D-10] Anomalous Temperature Dependence of Ge Surface Segregation in Si-MBE

Kiyokazu NAKAGAWA, Masanobu MIYAO (1.Central Research Laboratory, Hitachi, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-D-11] Self Limiting Adsorption of SiCl2H2 and Its Application to the Layer-by-Layer Photochemical Process

Yasuo Takahashi, Tsuneo Urisu (1.NTT LSI Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download

[S-D-12] Conformable CVD of SiO2 into Deep Trench Using the Digital Method

H. Sakaue, M. Nakano, T. Ichihara, Y. Horiike (1.Department of Electrical Engineering, Hiroshima University)

1990 International Conference on Solid State Devices and Materials |PDF Download

310 results (221 - 230)

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