[C-4-5] Planarized Deposition of High Quality Silicon Dioxide Film by Photo-Assisted Plasma CVD at 300℃ Using TEOS

Nobumasa SUZUKI, Kazuya MASU, Kazuo TSUBOUCHI, Nobuo MIKOSHIBA (1.Production Engineering Research Laboratory, Canon Inc., 2.Research Institute of Electrical Communication, Tohoku University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-4-6] Single Crystallization of Aluminum on SiO2 by Thermal Annealing and Observation with Scanning μ-RHEED Microscope

Kazuya MASU, Kazuo TSUBOUCHI, Yohei HIURA, Tatsuya MATANO, Nobuo MIKOSHIBA (1.Research Institute of Electrical Communication, Tohoku University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-4-7] Electromigration in a Single Crystal Submicron Width Aluminum Interconnection

Shoso Shingubara, Yasushi Nakasaki, Hisashi Kaneko (1.Toshiba ULSI Research Center, Toshiba R&D Center)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-4-8] Pulsed Current Electromigration Mechanism -Instantaneous Temperature Profile Model

Takeshi Furusawa, Kenji Hinode, Yoshio Homma (1.Central Research Laboratory, Hitachi, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-5-1] Analytical Model for Circuit Simulation with Quarter Micron MOSFETs: Subthreshold Characteristics

M. Miura-Mattausch, H. Jacobs (1.Siemens AG, Corporate Research and Development)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-5-2] Performance of Extrinsic and Intrinsic MOSFETs in Deep Submicron VLSI

Dezsoe Takacs (1.Siemens AG, Corporate Research and Development)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-5-3] Nanometer Structure of Gate Electrode/Gate Insulator Interface and Anomalous Voltage Deviation of Tunneling Current in Submicron MOS Devices

M. Ushiyama, Y. Ohji, T. Nishimoto, K. Komori, H. Kume, S. Nakagawa, S. Tachi (1.Central Research Laboratory, Hitachi Ltd., 2.Semiconductor Design & Development Center, Hitachi Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-5-4] Effects of Depleted Poly-Si Gate on MOSFET Performance

Masao Iwase, Shin-ichi Takagi (1.ULSI Research Center, TOSHIBA Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-5-5] Effects of Surface Orientation on the Universality of Inversion-Layer Mobility in Si MOSFETs

Shin-ichi Takagi, Masao Iwase, Akira Toriumi (1.ULSI Research Center, TOSHIBA Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-5-6] Mechanical Stress Induced Threshold Voltage Shifts for Nitrided Oxide Gate n- and p- MOSFETs

H. S. Momose, T. Morimoto, S. Takagi, K. Yamabe, S. Onga, H. Iwai (1.ULSI Research Center, Toshiba Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

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