[LN-D-15] Monolithic Integration of a Lateral Current Injection Laser and a JFET Based on the Same Modulation Doped Structure

Y. Honda, I. Suemune, M. Yamanishi (1.Faculty of Engineering, Hiroshima University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[LN-D-16] Possibility of Magnetic Ordered States in Semiconductor Quantum Dot System

Akira Sugimura (1.NTT Basic Research Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download

[LN-D-17] Spontaneously Polarized Superlattice: A Novel Quantum Confined Structure with Order/Disorder Phase Transition

Kazuo Yano, Katsuhiro Shimohigashi, Kohichi Seki (1.Hitachi Central Research Laboratory)

1990 International Conference on Solid State Devices and Materials |PDF Download

[LN-D-18] Coaxial Impact Collision Ion Scattering Spectroscopy System for the in-situ Monitoring of Molecular Beam Epitaxy

N. Sugiyama, A. Hashimoto, M. Tamura (1.Optoelectronics Technology Research Laboratory)

1990 International Conference on Solid State Devices and Materials |PDF Download

[LN-D-19] Low Interface State Density SiO2 on GaAs by High Quality Deposition and Ga Outdiffusion Control

Suehiro Sugitani, Kazuyoshi Asai (1.NTT LSI Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download

[LN-D-20] A (BiY)3Fe5O12 Waveguide with Stripe Magnetic Domain for a Magnetless Optical Isolator

Kaoru Matsuda, Tadashi Narusawa (1.Opto-electronics Laboratory, Semiconductor Research Center Matsushita Electric Industrial Co., Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[LN-D-21] YBa2Cu3O7-δ-Ag-Al/Al2O3/Pb Superconducting Tunnel Junctions

M. A. M. Gijs, D. Scholten, Th. van Rooy, A. M. Gerrits, M. F. H. Schuurmans (1.Philips Research Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download

[LN-SE-1] A Unified Circuit Model for the Polysilicon TFT

M. J. Izzard, P. Migliorato, W. I. Milne (1.Cambridge University Engineering Department)

1990 International Conference on Solid State Devices and Materials |PDF Download

[LN-SE-2] A 5 nm Thick Ultra-Thin Double-Gated Poly Si TFT Using Si2H6 as a Source Gas

T. Ueda, H. Komiya, T. Ashida, R. Miyake (1.IC GROUP, SHARP CORPORATION)

1990 International Conference on Solid State Devices and Materials |PDF Download

[LN-SE-3] Fabrication of a-Si:H TFT's by a Large Area Ion Doping Technique

Akihisa YOSHIDA, Masaaki NUKAYAMA, Yasunori ANDOH, Masatoshi KITAGAWA, Takashi HIRAO (1.Central Resarch Laboratories, Matsushita Erectric Ind. co., Ltd., 2.Research and Development Div., Nissin Electric Co., Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

310 results (301 - 310)

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