[C-10-10] Slow/Rapid Diffusion of Arsenic in SiO2

Yoshitaka TSUNASHIMA, Takashi NAKAO, Kenji TODORI, Kikuo YAMABE (1.ULSI Research Center, TOSHIBA Co.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-10-11] Secondary Defect Reduction by Multiple MeV Boron Ion Implantation

N. Shimizu, B. Mizuno, Y. Hirofuji, K. Tsuji (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-1-1] The Effect of Sulfur on the Surface of III-V Compound Semiconductors

Yasuo NANNICHI, Haruhiro OIGAWA (1.University of Tsukuba Institute of Materials Science)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-1-2] Electrical Properties of Gallium Fluoride (GaF3)/GaAs Interface with and without Sulfur Treatment

H. RICARD, K. H. KIM, K. AIZAWA, H. ISHIWARA (1.Research Laboratory of Precision Machinery and Electronics Tokyo Institute of Technology)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-1-3] Oxygen Implants Induced Group III Atom Interdiffusion in In0.53Ga0.47As-In0.52Al0.48As Multiquantum Wells

E. V. K. Rao, P. Ossart, H. Thibierge, M. Quillec, P. Krauz (1.Centre National d'Etudes des Telecommunications Laboratoire de Bagneux)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-1-4] Room-Temperature Synthesis of ZnS:Mn Films by H2 Plasma Chemical Sputtering

M. TONOUCHI, Y. SUN, T. MIYASATO, H. SAKAMA, M. OHMURA (1.Department of Computer Science and Electronics, Kyushu Institute of Technology, 2.Advanced Technology Research Center, NKK Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-1-5] Layer Disordering of ZnSe/ZnS Strained Layer Superlattices by N+ or Li+ Ion-Implantation and Low Temperature Annealing

Toshiya Yokogawa, Tohru Saitoh, Edmund L. Wolak, Tadashi Narusawa (1.Opto-Electronics Research Laboratory, Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-1-6] Dry Etching of InGaAsP/InP Structures by Reactive Ion Beam Etching Using Chlorine and Argon

Tohru Nishibe, Shin-ya Nunoue (1.Research and Development Center, Toshiba Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-1-7] N2/H2O: A New Gas Mixture for Deep Groove Ion Beam Etching of Long Wavelength Quaternary Mushroom Type Laser Structures

B. KEMPF, R. GOBEL, H. W. DINGES, H. BURKHARD (1.Deutsche Bundespost TELEK0M Forschungsinstitut beim FTZ)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-2-1] In Situ Surface Roughness Analysis of InGaAs Layers Grown on GaAs by MBE

J. C. Harmand, T. Matsuno, K. Inoue (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

310 results (111 - 120)

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