[C-5-7] Strain Measurements of Si at SiO2/Si Interface by Ion Beam Channeling

Hirofumi Fukumoto (1.Department of Electrical Engineering, Hiroshima University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[C-5-8] Measurement of the Surface Recombination Velocity S at the Si-SiO2 Interface by the Dual-Mercury Probe Method

Eiichi Suzuki, Hidetaka Takato, Kenichi Ishii, Yutaka Hayashi (1.Electrotechnical Laboratory)

1990 International Conference on Solid State Devices and Materials |PDF Download

T. TSUCHIYA, Y. OKAZAKI, M. MIYAKE, T. KOBAYASHI (1.NTT LSI Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download

W. Weber, Q. Wang, M. Brox, D. Schmitt-Landsiedel (1.Siemens AG, Corporate Research and Development)

1990 International Conference on Solid State Devices and Materials |PDF Download

Bang ZHOU, Gang RUAN (1.Microelectronics Institute Fudan University)

1990 International Conference on Solid State Devices and Materials |PDF Download

Hiroaki HAZAMA (1.ULSI Research Center, Toshiba Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

Udo SCHWALKE, Wilfried HANSCH, Arnulf LILL (1.SIEMENS AG, Corporate Research and Development)

1990 International Conference on Solid State Devices and Materials |PDF Download

Koji KOTANI, Tadashi SHIBATA, Tadahiro OHMI (1.Department of Electronics, Tohoku University)

1990 International Conference on Solid State Devices and Materials |PDF Download

Y. Tada, C. Nagata, M. Iwahashi (1.LSI Research Center, Technical Research Division, Kawasaki Steel Corp.)

1990 International Conference on Solid State Devices and Materials |PDF Download

Shian Aur, Amitava Chatterjee (1.Texas Instruments, Inc.)

1990 International Conference on Solid State Devices and Materials |PDF Download

310 results (71 - 80)