[D-2-2] Effect of Arsenic Flux on Desorption of Methylgallium from GaAs Surface in Metal-Organic Molecular Beam Epitaxy Studied by Mass Spectrometry

Yoshimasa Ohki, Yuji Hiratani (1.Optoelectronics Technology Research Laboratory)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-2-3] Composional Latching in GaAs1-xPx/GaAs MOVPE

Kentaro ONABE, Yoshinao MIURA, Xiong ZHANG, Yoshiki NITTA, Susumu FUKATSU, Yasuhiro SHIRAKI, Ryoichi ITO (1.Department of Applied Physics, The University of Tokyo, 2.Researeh Center for Advanced Science and Technology, The University of Tokyo)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-2-4] Characterization of GaAs/Zn(S, Se) Multi-Layered Structures Grown by OMVPE

Prakash A. MURAWALA, Seiji MARUO, Osamu TSUJI, Shizuo FUJITA, Shigeo FUJITA (1.Departrnent of Electrical Engineering, Kyoto University, 2.R&D Division, Samco International Inc.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-2-5] Analysis of Donor and Compensation Ratio in I-doped ZnSe by Far-Infrared Magneto-Absorption

Ken Saito, Syoji Yamada, Akira Ohki, Koshi Ando (1.NTT Basic Reseach Laboratories, 2.NTT Opto-electronics Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-2-6] Improvement of Composition Uniformity of InGaAsP Crystals Grown by MOVPE Using AsH3 and IBPH2

Akito Kuramata, Susumu Yamazaki, Kazuo Nakajima (1.Fujitsu Laboratories Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-2-7] Crystal Growth of GaInP on (111)B GaAs by Metalorganic Chemical Vapor Deposition

Etsuo MORITA, Masao IKEDA, Makoto INOUE, Kunio KANEKO (1.Sony Corporation Research Center)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-2-8] Anomalous Mg Incorporation Behavior in InGaAlP Grown by Metalorganic Chemical Vapor Deposition

Yukie NISHIKAWA, Hideto SUGAWARA, Masayuki ISHIKAWA, Yoshihiro KOKUBUN (1.Research & Development Center, Toshiba Corporation)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-2-9] Point Defects of GaAs Films on Fluoride/Si Structures and Its Reduction by 2-Step Growth Method

Atsuki ONO, Osamu ISHIYAMA, Kazuo TSUTSUI, Seijiro FURUKAWA (1.Department of Applied Electronics, Graduate School of Science & Engineering, Tokyo Institute of Technology)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-3-1] Vertical Cavity Surface Emitting Lasers -Device Technology and Future Prospects-

Kenichi Iga, Fumio Koyama (1.Tokyo Institute of Technology)

1990 International Conference on Solid State Devices and Materials |PDF Download

[D-3-2] Phase-Locked Two-Dimensional Array of Vertical Cavity Surface Emitting Lasers

Hoi-Jun Yoo, J. R. Hayes, E. G. Paek, J. P. Harbison, L. T. Florez, Young-Se Kwon (1.BELLCORE, 2.Dept. of E.E., KAIST)

1990 International Conference on Solid State Devices and Materials |PDF Download

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