[PD4-5] Electron Emission into Vacuum from PZT Ferroelectric Ceramics Induced by Polarization Reversal

Jun-ichi ASANO, Masanori OKUYAMA, Yoshihiro HAMAKAWA (1.Department of Electrical Engineering, Faculty of Engineering Science, Osaka University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[D-2-1] Porous Silicon: A Quantum Sponge Structure?

Ulrich GOSELE, Volker LEHMANN (1.School of Engineering, Duke University, 2.Siemens Research Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF Download

[D-2-2] The Evidence of Quantum Size Effect from Photoluminescence of Low Temperature Oxidized Porous Si

Anri Nakajima, Toru Itakura, Satoru Watanabe, Yoshihiro Sugita, Yasuo Nara, Noriaki Nakayama (1.Fujitsu Laboratories Ltd., Atsugi)

1992 International Conference on Solid State Devices and Materials |PDF Download

[D-2-3] Photosynthesis of Luminescent Porous Silicon

Nobuaki NOGUCHI, Ikuo SUEMUNE (1.Faculty of Engineering, Hiroshima University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[D-2-4] Ultrafast Luminescence Decay in Porous Silicon

Takahiro Matsumoto, Toshiro Futagi, Hidenori Mimura Yoshihiko Kanemitsu (1.Electronics Research Laboratories, Nippon Steel Corporation, 2.Institute of Physics, University of Tsukuba)

1992 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-1] Fabrication and Measurements of Ultra-Short Silicon MOSFETs

Allan HARTSTEIN (1.IBM Research Division Thomas J. Watson Research Center)

1992 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-2] Mesoscopic Devices: Will They Supersede Transistors in ULSI?

Henry I. Smith, D. A. Antoniadis (1.Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology)

1992 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-3] High Speed 0.1 μm CMOS Devices Operating at Room Temperature

A. Toriumi, T. Mizuno, M. Iwase, M. Takahashi, H. Niiyama, M. Fukumoto, S. Inaba, I. Mori, M. Yoshimi (1.ULSI Research Center, Toshiba Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-4] 3 V Operation of 70 nm Gate Length MOSFET with New Double Punchthrough Stopper Structure

Takeshi HASHIMOTO, Yoshimi SUDOH, Hiroyuki KURINO, Akira NARAI, Shin YOKOYAMA, Yasuhiro HORIIKE, Mitsumasa KOYANAGI (1.Research Center for Integrated Systems, Hiroshima University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[S-IV-5] SOI: New Opportunities for Sub-0.25 μm VLSI

Ghavam G. Shahidi (1.IBM Research Division, T. J. Watson Research Center)

1992 International Conference on Solid State Devices and Materials |PDF Download

263 results (161 - 170)

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